IPB009N03L G

IPB009N03L G
Mfr. #:
IPB009N03L G
Fabricante:
Infineon Technologies
Descripción:
Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB009N03L G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPB009N03L G más información
Atributo del producto
Valor de atributo
Fabricante
INFINEON
categoria de producto
FET - Single
Serie
OptiMOS 3
embalaje
Carrete
Alias ​​de parte
IPB009N03LGATMA1 IPB009N03LGXT SP000394657
Unidad de peso
0.056438 oz
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TO-263-7
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente de Quint única
Tipo transistor
1 N-Channel
Disipación de potencia Pd
250 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
22 ns
Hora de levantarse
14 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
180 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
700 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
103 ns
Tiempo de retardo de encendido típico
26 ns
Modo de canal
Mejora
Tags
IPB009N03LG, IPB00, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descripción Valores Precio
IPB009N03LGATMA1
DISTI # V72:2272_06377968
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
1353
  • 1000:$1.7480
  • 500:$2.1340
  • 250:$2.2700
  • 100:$2.4310
  • 25:$2.5250
  • 10:$2.8060
  • 1:$3.6278
IPB009N03LGATMA1
DISTI # V36:1790_06377968
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$1.4610
  • 500000:$1.4630
  • 100000:$1.5960
  • 10000:$1.8090
  • 1000:$1.8440
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1384In Stock
  • 500:$2.2522
  • 100:$2.6457
  • 10:$3.2290
  • 1:$3.6000
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1384In Stock
  • 500:$2.2522
  • 100:$2.6457
  • 10:$3.2290
  • 1:$3.6000
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 5000:$1.6861
  • 2000:$1.7519
  • 1000:$1.8441
IPB009N03LGATMA1
DISTI # 26194931
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
1353
  • 4:$3.6278
IPB009N03LGXT
DISTI # IPB009N03LGATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB009N03LGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 1000
  • 10000:$1.5940
  • 6000:$1.6229
  • 4000:$1.6794
  • 2000:$1.7424
  • 1000:$1.8076
IPB009N03L G
DISTI # IPB009N03L G
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 0
  • 50000:$1.5880
  • 25000:$1.6083
  • 10000:$1.6292
  • 5000:$1.6507
  • 3000:$1.6953
  • 2000:$1.7424
  • 1000:$1.7921
IPB009N03LGATMA1
DISTI # SP000394657
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: SP000394657)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 10000:€1.2900
  • 6000:€1.3900
  • 4000:€1.4900
  • 2000:€1.5900
  • 1000:€1.8900
IPB009N03LGATMA1.
DISTI # 15AC3078
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:30V,On Resistance Rds(on):700µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:250W,No. of Pins:7Pins RoHS Compliant: Yes0
  • 10000:$1.6000
  • 6000:$1.6300
  • 4000:$1.6800
  • 2000:$1.7500
  • 1:$1.8100
IPB009N03L G
DISTI # 726-IPB009N03LG
Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant
466
  • 1:$3.3200
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
  • 2000:$1.6600
  • 5000:$1.6000
IPB009N03LGATMA1
DISTI # 726-IPB009N03LGATMA1
Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant
900
  • 1:$3.3200
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
  • 2000:$1.6600
  • 5000:$1.6000
IPB009N03LGATMA1
DISTI # 7545406P
Infineon Technologies AGMOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL895
  • 500:£1.5200
  • 250:£1.6900
  • 50:£1.8700
  • 10:£2.0500
IPB009N03LGInfineon Technologies AG 98
  • 3:$2.4600
  • 10:$1.8450
  • 29:$1.5375
IPB009N03LGInfineon Technologies AG180 A, 30 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA89
  • 39:$1.5000
  • 11:$2.0000
  • 1:$3.0000
IPB009N03LGInfineon Technologies AG180 A, 30 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA78
  • 38:$1.2300
  • 11:$2.0500
  • 1:$3.2800
IPB009N03L G
DISTI # TMOSP8652
Infineon Technologies AGN-CH30V 180A1mOhm TO263-3
RoHS: Compliant
Stock DE - 50Stock HK - 0Stock US - 0
  • 1000:$2.2600
  • 2000:$1.7400
IPB009N03LGATMA1
DISTI # 1775514
Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-71885
  • 500:£1.5300
  • 250:£1.7000
  • 100:£1.7900
  • 10:£2.0600
  • 1:£2.8800
IPB009N03LGATMA1
DISTI # 1775514
Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-7
RoHS: Compliant
500
  • 2000:$2.5000
  • 1000:$2.6400
  • 500:$3.1300
  • 250:$3.5000
  • 100:$3.6800
  • 10:$4.2500
  • 1:$5.0000
Imagen Parte # Descripción
IPB009N03LGATMA1

Mfr.#: IPB009N03LGATMA1

OMO.#: OMO-IPB009N03LGATMA1

MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
IPB009N03L G

Mfr.#: IPB009N03L G

OMO.#: OMO-IPB009N03L-G

MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
IPB009N03LGATMA1

Mfr.#: IPB009N03LGATMA1

OMO.#: OMO-IPB009N03LGATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 180A TO263-7
IPB009N03L

Mfr.#: IPB009N03L

OMO.#: OMO-IPB009N03L-1190

Nuevo y original
IPB009N03L G

Mfr.#: IPB009N03L G

OMO.#: OMO-IPB009N03L-G-1190

Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
IPB009N03LG

Mfr.#: IPB009N03LG

OMO.#: OMO-IPB009N03LG-1190

MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de IPB009N03L G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,40 US$
2,40 US$
10
2,28 US$
22,80 US$
100
2,16 US$
216,00 US$
500
2,04 US$
1 020,00 US$
1000
1,92 US$
1 920,00 US$
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