IPB009N03LGATMA1

IPB009N03LGATMA1
Mfr. #:
IPB009N03LGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 30V 180A TO263-7
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB009N03LGATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
XPB009N03
embalaje
Carrete
Alias ​​de parte
G IPB009N03L IPB009N03LGXT SP000394657
Nombre comercial
OptiMOS
Paquete-Estuche
TO-263-7
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Polaridad del transistor
Canal N
Tags
IPB009N03LG, IPB00, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.95 mOhm 227 nC OptiMOS™ Power Mosfet - D2PAK-7
***ineon
With the new OptiMOS3 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages make OptiMOS3 30V the best choice for the demanding requirements of battery management, OR-ing, e-fuse and hot-swap application. | Summary of Features: Lowest on-state resistance; High DC and pulsed current capability; Easy to design-in | Benefits: Increased battery lifetime and system efficiency; Saving space (reducing the number of devices needed); Saving costs | Target Applications: Or-ing in power supply; Hot-swap; e-fuse; Battery management
***ment14 APAC
MOSFET, N CH, 180A, 30V, PG-TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:30V; On Resistance Rds(on):700µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Power Dissipation Pd:250W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Parte # Mfg. Descripción Valores Precio
IPB009N03LGATMA1
DISTI # V72:2272_06377968
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
1383
  • 1000:$1.6010
  • 500:$1.6500
  • 250:$1.6980
  • 100:$1.7470
  • 25:$1.9410
  • 10:$2.1570
  • 1:$2.3460
IPB009N03LGATMA1
DISTI # V36:1790_06377968
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB009N03LGATMA1
    DISTI # IPB009N03LGATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    1934In Stock
    • 500:$2.3594
    • 100:$2.9138
    • 10:$3.5530
    • 1:$3.9800
    IPB009N03LGATMA1
    DISTI # IPB009N03LGATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    1934In Stock
    • 500:$2.3594
    • 100:$2.9138
    • 10:$3.5530
    • 1:$3.9800
    IPB009N03LGATMA1
    DISTI # IPB009N03LGATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    1000In Stock
    • 5000:$1.7663
    • 2000:$1.8353
    • 1000:$1.9319
    IPB009N03LGATMA1
    DISTI # 26194931
    Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
    RoHS: Compliant
    1383
    • 1000:$1.7211
    • 500:$1.7737
    • 250:$1.8254
    • 100:$1.8780
    • 25:$2.0866
    • 10:$2.3188
    • 4:$2.5219
    IPB009N03LGXT
    DISTI # IPB009N03LGATMA1
    Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB009N03LGATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 1000
    • 1000:$1.8076
    • 2000:$1.7424
    • 4000:$1.6794
    • 6000:$1.6229
    • 10000:$1.5940
    IPB009N03LGATMA1
    DISTI # SP000394657
    Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: SP000394657)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 1000:€1.8900
    • 2000:€1.5900
    • 4000:€1.4900
    • 6000:€1.3900
    • 10000:€1.2900
    IPB009N03LGATMA1.
    DISTI # 15AC3078
    Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:30V,On Resistance Rds(on):700µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:250W,No. of Pins:7Pins RoHS Compliant: Yes0
    • 10000:$1.6000
    • 6000:$1.6300
    • 4000:$1.6800
    • 2000:$1.7500
    • 1:$1.8100
    IPB009N03LGATMA1
    DISTI # 726-IPB009N03LGATMA1
    Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
    RoHS: Compliant
    1000
    • 1:$3.3200
    • 10:$2.8200
    • 100:$2.4400
    • 250:$2.3200
    • 500:$2.0800
    • 1000:$1.7500
    • 2000:$1.6600
    • 5000:$1.6000
    IPB009N03L G
    DISTI # 726-IPB009N03LG
    Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
    RoHS: Compliant
    424
    • 1:$3.3200
    • 10:$2.8200
    • 100:$2.4400
    • 250:$2.3200
    • 500:$2.0800
    • 1000:$1.7500
    • 2000:$1.6600
    • 5000:$1.6000
    IPB009N03LGATMA1
    DISTI # 7545406P
    Infineon Technologies AGMOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL899
    • 500:£1.5200
    • 250:£1.6900
    • 50:£1.8700
    • 10:£2.0500
    IPB009N03LGATMA1
    DISTI # 1775514
    Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-7
    RoHS: Compliant
    1886
    • 500:£1.5300
    • 250:£1.7000
    • 100:£1.7900
    • 10:£2.0600
    • 1:£2.8800
    IPB009N03LGATMA1
    DISTI # 1775514
    Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-7
    RoHS: Compliant
    500
    • 5000:$2.4100
    • 2000:$2.5000
    • 1000:$2.6400
    • 500:$3.1300
    • 250:$3.5000
    • 100:$3.6800
    • 10:$4.2500
    • 1:$5.0000
    Imagen Parte # Descripción
    IPB009N03LGATMA1

    Mfr.#: IPB009N03LGATMA1

    OMO.#: OMO-IPB009N03LGATMA1

    MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
    IPB009N03L G

    Mfr.#: IPB009N03L G

    OMO.#: OMO-IPB009N03L-G

    MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
    IPB009N03LGATMA1

    Mfr.#: IPB009N03LGATMA1

    OMO.#: OMO-IPB009N03LGATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 30V 180A TO263-7
    IPB009N03L

    Mfr.#: IPB009N03L

    OMO.#: OMO-IPB009N03L-1190

    Nuevo y original
    IPB009N03L G

    Mfr.#: IPB009N03L G

    OMO.#: OMO-IPB009N03L-G-1190

    Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
    IPB009N03LG

    Mfr.#: IPB009N03LG

    OMO.#: OMO-IPB009N03LG-1190

    MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de IPB009N03LGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,20 US$
    2,20 US$
    10
    2,09 US$
    20,89 US$
    100
    1,98 US$
    197,90 US$
    500
    1,87 US$
    934,50 US$
    1000
    1,76 US$
    1 759,10 US$
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