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CSD25211W1015

CSD25211W1015
Mfr. #:
CSD25211W1015
Descripción:
MOSFET PCh NexFET Power MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CSD25211W1015 Ficha de datos
Entrega:
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ECAD Model:
Más información:
CSD25211W1015 más información CSD25211W1015 Product Details
Atributo del producto
Valor de atributo
Fabricante:
Instrumentos Texas
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DSBGA-6
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
3.2 A
Rds On - Resistencia de la fuente de drenaje:
44 mOhms
Vgs th - Voltaje umbral puerta-fuente:
800 mV
Vgs - Voltaje puerta-fuente:
6 V
Qg - Carga de puerta:
3.4 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1 W
Configuración:
Único
Nombre comercial:
NexFET
Embalaje:
Carrete
Altura:
0.625 mm
Longitud:
1.5 mm
Serie:
CSD25211W1015
Tipo de transistor:
1 P-Channel
Ancho:
1 mm
Marca:
Instrumentos Texas
Transconductancia directa - Mín .:
12 S
Otoño:
14.2 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8.8 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
36.9 ns
Tiempo típico de retardo de encendido:
13.6 ns
Unidad de peso:
0.000060 oz
Tags
CSD252, CSD25, CSD2, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***NGYU ELECTRONICS
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Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
***roFlash
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ark
Mosfet, N Channel, 20V, 0.025Ohm, 3.9A, Sot-23-3, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.025Ohm; Transistor Mounting:surface Mount; Msl:- Rohs Compliant: No
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:2312; Current Id Max:5A; Package / Case:SOT-23; Power Dissipation Pd:750µW; Pulse Current Idm:15A; SMD Marking:M2; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V
***ure Electronics
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***et Europe
Transistor MOSFET Array N-CH/P-CH 20V 4A 8-Pin Chip FET T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:8V; Package/Case:8-1206; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
***ment14 APAC
DUAL N/P CHANNEL MOSFET, 20V, 1206; Tran; DUAL N/P CHANNEL MOSFET, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:4A; Continuous Drain Current Id, P Channel:-3.1A; Drain Source Voltage Vds, N Channel:20V
***nell
MOSFET, NP CH, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:1206; No. of Pins:8
***roFlash
P-Channel 20 V 42.5 mO Surface Mount Enhancement Mode Mosfet - SOT-23
***ment14 APAC
MOSFET,P CH,20V,4A,SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Source Voltage Vds:-20V; On Resistance
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.9 W
***nell
MOSFET,P CH,20V,4A,SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -4A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.031ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -550mV; Power Dissipation Pd: 900mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -4A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: -8V
*** Source Electronics
Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.6A SOT-23
***ure Electronics
Single P-Channel 20 V 0.81 W 15.4 nC Silicon Surface Mount Mosfet - SOT-23
***ment14 APAC
MOSFET, P-CH, -20V, -3.6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Source Voltage Vds:-20V; On Resistance
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.81 W
***nell
MOSFET, P-CH, -20V, -3.6A, SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.6A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power Dissipation Pd: 810mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***(Formerly Allied Electronics)
SI1424EDH-T1-GE3 N-channel MOSFET Transistor; 4 A; 20 V; 6-Pin SOT-363
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Trans MOSFET N-CH 20V 4A 6-Pin SC-70 T/R
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***S
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***nell
MOSFET, N CH, W/D, 20V, 4A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-; Operating Temperature Range:-55°C to +150°C
***Yang
Trans MOSFET N-CH 20V 3.6A 3-Pin SOT-323 T/R - Product that comes on tape, but is not reeled
***emi
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NTR Series 20 V 24 mOhm 0.47 W Surface Mount N-Channel Power Mosfet - SOT-23
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MOSFET, N-CH, 20V, 3.6A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Source Voltage Vds:20V; On Resistance
*** Stop Electro
Small Signal Field-Effect Transistor, 3.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ark
MOSFET, N-CH, 20V, 3.6A, 150DEG C, 0.47W; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 20V, 3.6A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 470mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.6 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 55 / Gate-Source Voltage V = 8 / Fall Time us = 4.67 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 420 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 470
***AS INS
The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
NexFET P-Channel Power MOSFETs
OMO Electronic NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.
TI P-Channel MOSFETs - 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Parte # Descripción Valores Precio
CSD25211W1015
DISTI # 296-36578-1-ND		MOSFET P-CH 20V 3.2A 6DSBGA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8375In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
CSD25211W1015
DISTI # 296-36578-6-ND		MOSFET P-CH 20V 3.2A 6DSBGA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8375In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
CSD25211W1015
DISTI # 296-36578-2-ND		MOSFET P-CH 20V 3.2A 6DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.1782
  • 6000:$0.1914
  • 3000:$0.2046
CSD25211W1015
DISTI # CSD25211W1015		Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R (Alt: CSD25211W1015)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    CSD25211W1015
    DISTI # CSD25211W1015    		Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R - Tape and Reel (Alt: CSD25211W1015)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.1739
    • 6000:$0.1649
    • 12000:$0.1599
    • 18000:$0.1539
    • 30000:$0.1499
    CSD25211W1015P-Channel NexFET&#153,Power MOSFET5730
    • 1000:$0.1400
    • 750:$0.1500
    • 500:$0.1900
    • 250:$0.2300
    • 100:$0.2500
    • 25:$0.3000
    • 10:$0.3200
    • 1:$0.3600
    CSD25211W1015
    DISTI # 595-CSD25211W1015    		MOSFET PCh NexFET Power MOSFET
    RoHS: Compliant    		786
    • 1:$0.5200
    • 10:$0.4300
    • 100:$0.2640
    • 1000:$0.2040
    • 3000:$0.1740
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    Mfr.#: TPS61230ARNSR

    OMO.#: OMO-TPS61230ARNSR

    		 Switching Voltage Regulators 5-V/6-A High Efficiency Step-Up Converter in 2.0-mm x 2.0-mm QFN Package 7-VQFN-HR -40 to 125
    ESP-WROOM-02

    Mfr.#: ESP-WROOM-02

    OMO.#: OMO-ESP-WROOM-02

    		 WiFi Modules (802.11) SMD Module, ESP8266EX, 16Mbits SPI flash, UART Mode
    CC0402KRX7R9BB473

    Mfr.#: CC0402KRX7R9BB473

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    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 47000pF 50V 10% 0402 Case Size
    ASAK1-32.768KHZ-LRS-T

    Mfr.#: ASAK1-32.768KHZ-LRS-T

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    		 LLATOR, 32.768KHZ, SMD, LVCMOS
    Disponibilidad
    Valores:
    Available
    En orden:
    1986
    Ingrese la cantidad:
    El precio actual de CSD25211W1015 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,52 US$
    0,52 US$
    10
    0,43 US$
    4,30 US$
    100
    0,26 US$
    26,40 US$
    1000
    0,20 US$
    204,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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