CSD25211W1015

Mfr. #: CSD25211W1015
Fabricante: Texas Instruments
Descripción: MOSFET PCh NexFET Power MOSFET
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: CSD25211W1015 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD25211W1015 Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. DSBGA-6 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 20 V 3.2 A continuous drain current Rds On value of 44 mOhms Gate-Source Threshold Voltage Range: 800 mV Gate-Source Voltage: 6 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 1 W This product has a Single configuration. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 0.625 mm. 1.5 mm long The Transistor Type is 1 P-Channel. Texas Instruments is a trusted brand for quality electronics Minimum forward transconductance of 12 S 14.2 ns fall time MOSFET product type Rise Time is 8.8 ns. 3000 of 100 MOSFETs as subcategory Turn-off delay time is 36.9 ns. The typical turn-on delay time is 13.6 ns. 1. 0.000060 oz of Unit Weight

CSD25211W1015 Image

CSD25211W1015

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD25211W1015 Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: DSBGA-6
  • Number of Channels: 1 Channel
  • Transistor Polarity: P-Channel
  • Vds - Drain-Source Breakdown Voltage: 20 V
  • Id - Continuous Drain Current: 3.2 A
  • Rds On - Drain-Source Resistance: 44 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 800 mV
  • Vgs - Gate-Source Voltage: 6 V
  • Qg - Gate Charge: 3.4 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 1 W
  • Configuration: Single
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 0.625 mm
  • Length: 1.5 mm
  • Series: CSD25211W1015
  • Transistor Type: 1 P-Channel
  • Width: 1 mm
  • Brand: Texas Instruments
  • Forward Transconductance - Min: 12 S
  • Fall Time: 14.2 ns
  • Product Type: MOSFET
  • Rise Time: 8.8 ns
  • Factory Pack Quantity: 3000
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 36.9 ns
  • Typical Turn-On Delay Time: 13.6 ns
  • Unit Weight: 0.000060 oz

CSD25211W1015

CSD25211W1015 Specifications

CSD25211W1015 FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed Texas Instruments

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is SMD/SMT.

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is DSBGA-6.

  • A: What is the Number of Channels of the product?

    Q: The Number of Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 20 V

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 3.2 A.

  • A: What is the Rds On - Drain-Source Resistance of the product?

    Q: The Rds On - Drain-Source Resistance of the product is 44 mOhms.

  • A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

    Q: The Vgs th - Gate-Source Threshold Voltage of the product is 800 mV.

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is 6 V.

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 150 C.

  • A: What is the Pd - Power Dissipation of the product?

    Q: The Pd - Power Dissipation of the product is 1 W.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: At what frequency does the Height?

    Q: The product Height is 0.625 mm.

  • A: At what frequency does the Length?

    Q: The product Length is 1.5 mm.

  • A: What is the Transistor Type of the product?

    Q: The Transistor Type of the product is 1 P-Channel.

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed Texas Instruments

  • A: What is the Forward Transconductance - Min of the product?

    Q: The Forward Transconductance - Min of the product is 12 S.

  • A: Is the cutoff frequency of the product Fall Time?

    Q: Yes, the product's Fall Time is indeed 14.2 ns

  • A: At what frequency does the Product Type?

    Q: The product Product Type is MOSFET.

  • A: What is the Rise Time of the product?

    Q: The Rise Time of the product is 8.8 ns.

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 3000

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is MOSFETs.

  • A: What is the Typical Turn-Off Delay Time of the product?

    Q: The Typical Turn-Off Delay Time of the product is 36.9 ns.

  • A: Is the cutoff frequency of the product Typical Turn-On Delay Time?

    Q: Yes, the product's Typical Turn-On Delay Time is indeed 13.6 ns

  • A: What is the Unit Weight of the product?

    Q: The Unit Weight of the product is 0.000060 oz.

1680 In Stock
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Cantidad
Precio unitario
Ext. Precio
1
0,52 US$
0,52 US$
10
0,43 US$
4,30 US$
100
0,26 US$
26,40 US$
1000
0,20 US$
204,00 US$
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