BSM180D12P2C101

BSM180D12P2C101
Mfr. #:
BSM180D12P2C101
Fabricante:
Rohm Semiconductor
Descripción:
Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSM180D12P2C101 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BSM180D12P2C101 más información
Atributo del producto
Valor de atributo
Fabricante
Semiconductor Rohm
categoria de producto
FET: matrices
Serie
BSM180D12P2C101
Producto
Módulos de semiconductores de potencia
Escribe
SiC Power Module
embalaje
A granel
Estilo de montaje
Tornillo
Rango de temperatura de funcionamiento
- 40 C to + 150 C
Paquete-Estuche
Módulo
Temperatura de funcionamiento
-40°C ~ 150°C (TJ)
Tipo de montaje
*
Paquete de dispositivo de proveedor
Módulo
Configuración
Medio puente
Tipo FET
2 N-Channel (Half Bridge)
Potencia máxima
1130W
Drenaje-a-fuente-voltaje-Vdss
1200V (1.2kV)
Entrada-Capacitancia-Ciss-Vds
23000pF @ 10V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
180A
Rds-On-Max-Id-Vgs
-
Vgs-th-Max-Id
4V @ 35.2mA
Puerta-Carga-Qg-Vgs
-
Tags
BSM180D, BSM180, BSM18, BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
Parte # Mfg. Descripción Valores Precio
BSM180D12P2C101
DISTI # BSM180D12P2C101-ND
ROHM SemiconductorMOSFET 2N-CH 1200V 180A MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk
On Order
  • 10:$418.8610
  • 1:$434.9700
BSM180D12P2C101
DISTI # BSM180D12P2C101
ROHM SemiconductorTrans SiC MOSFET N-CH 1.2KV 180A 10-Pin Case C Tray - Bulk (Alt: BSM180D12P2C101)
RoHS: Compliant
Min Qty: 12
Container: Bulk
Americas - 3
  • 12:$463.3900
  • 24:$434.4900
  • 48:$408.9900
  • 72:$386.3900
  • 120:$375.9900
BSM180D12P2C101
DISTI # 755-BSM180D12P2C101
ROHM SemiconductorDiscrete Semiconductor Modules Mod: 1200V 180A (no Diode)
RoHS: Compliant
0
  • 1:$434.9700
  • 5:$418.8700
BSM180D12P2C101
DISTI # 2345471
ROHM SemiconductorMODULE, POWER, SIC, 1200V, 180A
RoHS: Compliant
1
  • 1:£379.0000
Imagen Parte # Descripción
BSM180D12P3C007

Mfr.#: BSM180D12P3C007

OMO.#: OMO-BSM180D12P3C007

Discrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD
BSM180D12P2C101

Mfr.#: BSM180D12P2C101

OMO.#: OMO-BSM180D12P2C101

Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
BSM180D12P3C007

Mfr.#: BSM180D12P3C007

OMO.#: OMO-BSM180D12P3C007-ROHM-SEMI

SIC POWER MODULE
BSM180D12P3C007 , TDZTR6

Mfr.#: BSM180D12P3C007 , TDZTR6

OMO.#: OMO-BSM180D12P3C007-TDZTR6-1190

Nuevo y original
BSM180D12P2E002

Mfr.#: BSM180D12P2E002

OMO.#: OMO-BSM180D12P2E002-1190

IPM Intelligent Power Module SIC-DMOSFET/SIC-SBD 204A 2500V 11-Pin Tray (Alt: BSM180D12P2E002)
BSM180D12P2C101

Mfr.#: BSM180D12P2C101

OMO.#: OMO-BSM180D12P2C101-ROHM-SEMI

Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de BSM180D12P2C101 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
563,98 US$
563,98 US$
10
535,79 US$
5 357,86 US$
100
507,59 US$
50 758,65 US$
500
479,39 US$
239 693,65 US$
1000
451,19 US$
451 188,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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