IPI034NE7N3 G

IPI034NE7N3 G
Mfr. #:
IPI034NE7N3 G
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPI034NE7N3 G Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS 3
embalaje
Tubo
Alias ​​de parte
IPI034NE7N3GAKSA1 SP000641734
Unidad de peso
0.084199 oz
Estilo de montaje
A través del orificio
Nombre comercial
OptiMOS
Paquete-Estuche
I2PAK-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
214 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
85 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
100 A
Vds-Drain-Source-Breakdown-Voltage
75 V
Resistencia a la fuente de desagüe de Rds
3.4 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
40 nS
Qg-Gate-Charge
88 nC
Tags
IPI034NE7N3G, IPI034, IPI03, IPI0, IPI
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
IPI034NE7N3 G
DISTI # IPI034NE7N3G-ND
Infineon Technologies AGMOSFET N-CH 75V 100A TO262-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    IPI034NE7N3GInfineon Technologies AGPower Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RoHS: Compliant
    7459
    • 1000:$1.2700
    • 500:$1.3300
    • 100:$1.3900
    • 25:$1.4500
    • 1:$1.5600
    IPI034NE7N3GAKSA1Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RoHS: Compliant
    498
    • 1:$0.0200
    • 25:$0.0200
    • 100:$0.0200
    • 500:$0.0200
    • 1000:$0.0200
    IPI034NE7N3 G
    DISTI # 726-IPI034NE7N3G
    Infineon Technologies AGMOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
    RoHS: Compliant
    0
      Imagen Parte # Descripción
      IPI034NE7N3 G

      Mfr.#: IPI034NE7N3 G

      OMO.#: OMO-IPI034NE7N3-G

      MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
      IPI034NE7N3GAKSA1

      Mfr.#: IPI034NE7N3GAKSA1

      OMO.#: OMO-IPI034NE7N3GAKSA1-1190

      Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      IPI034NE7N3

      Mfr.#: IPI034NE7N3

      OMO.#: OMO-IPI034NE7N3-1190

      Nuevo y original
      IPI034NE7N3G

      Mfr.#: IPI034NE7N3G

      OMO.#: OMO-IPI034NE7N3G-1190

      Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      IPI034NE7N3G(034NE7N)

      Mfr.#: IPI034NE7N3G(034NE7N)

      OMO.#: OMO-IPI034NE7N3G-034NE7N--1190

      Nuevo y original
      IPI034NE7N3GS

      Mfr.#: IPI034NE7N3GS

      OMO.#: OMO-IPI034NE7N3GS-1190

      Nuevo y original
      IPI034NE7N3 G

      Mfr.#: IPI034NE7N3 G

      OMO.#: OMO-IPI034NE7N3-G-INFINEON-TECHNOLOGIES

      IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de IPI034NE7N3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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      100
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      1000
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