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IRFP4229PBF

IRFP4229PBF
Mfr. #:
IRFP4229PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET MOSFT 250V 44A 46mOhm 72nC Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFP4229PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFP4229PBF DatasheetIRFP4229PBF Datasheet (P4-P6)IRFP4229PBF Datasheet (P7-P8)
ECAD Model:
Más información:
IRFP4229PBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
250 V
Id - Corriente de drenaje continua:
44 A
Rds On - Resistencia de la fuente de drenaje:
46 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
72 nC
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
310 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
20.7 mm
Longitud:
15.87 mm
Tipo de transistor:
1 N-Channel
Ancho:
5.31 mm
Marca:
Infineon / IR
Transconductancia directa - Mín .:
83 S
Otoño:
19 ns
Tipo de producto:
MOSFET
Hora de levantarse:
27 ns
Cantidad de paquete de fábrica:
400
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
44 ns
Tiempo típico de retardo de encendido:
25 ns
Parte # Alias:
SP001578046
Unidad de peso:
1.340411 oz
Tags
IRFP4229, IRFP422, IRFP42, IRFP4, IRFP, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ler Electronic
MOSFET Operating temperature: -40...+175 °C Housing type: TO-247 Power dissipation: 150 W
***ineon SCT
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-247AC package, TO247-3, RoHS
***ied Electronics & Automation
MOSFET, N Ch., 250V, 44A, 46 MOHM, 72 NC QG, TO-247AC, Pb-Free
***ure Electronics
Single N-Channel 250 V 46 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC
***ment14 APAC
MOSFET, N, 250V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:300V; On Resistance Rds(on):38mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310mW; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4229; Current Id Max:44A; Package / Case:TO-247AC; Power Dissipation Pd:310mW; Pulse Current Idm:180A; SMD Marking:310; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Parte # Mfg. Descripción Valores Precio
IRFP4229PBF
DISTI # V99:2348_13892472		Infineon Technologies AGTrans MOSFET N-CH 250V 44A 3-Pin(3+Tab) TO-247AC Tube282
  • 1:$3.1867
IRFP4229PBF
DISTI # IRFP4229PBF-ND		Infineon Technologies AGMOSFET N-CH 250V 44A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		343In Stock
  • 1000:$2.5301
  • 500:$2.9484
  • 100:$3.5758
  • 25:$3.8976
  • 1:$4.7800
IRFP4229PBF
DISTI # 31271459		Infineon Technologies AGTrans MOSFET N-CH 250V 44A 3-Pin(3+Tab) TO-247AC Tube6616
  • 8:$1.3695
IRFP4229PBF
DISTI # 26198397		Infineon Technologies AGTrans MOSFET N-CH 250V 44A 3-Pin(3+Tab) TO-247AC Tube282
  • 250:$2.3980
  • 100:$2.4690
  • 10:$2.8050
  • 4:$3.1750
IRFP4229PBF
DISTI # SP001578046		Infineon Technologies AGTrans MOSFET N-CH 250V 44A 3-Pin(3+Tab) TO-247AC (Alt: SP001578046)
RoHS: Compliant
Min Qty: 1		Europe - 610
  • 1:€2.8900
  • 10:€2.7900
  • 25:€2.7900
  • 50:€2.7900
  • 100:€2.2900
  • 500:€1.9900
  • 1000:€1.9900
IRFP4229PBF
DISTI # IRFP4229PBF		Infineon Technologies AGTrans MOSFET N-CH 250V 44A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP4229PBF)
RoHS: Compliant
Min Qty: 275
Container: Tube		Americas - 0
  • 275:$1.5900
  • 325:$1.5900
  • 600:$1.4900
  • 1375:$1.4900
  • 2750:$1.3900
IRFP4229PBF
DISTI # 19M4171		Infineon Technologies AGN CHANNEL HEXFET MOSFET, PDP SWITCH, 250V, 44A, TO247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:3Pins RoHS Compliant: Yes66
  • 1:$3.8800
  • 10:$3.3000
  • 25:$3.1500
  • 50:$3.0100
  • 100:$2.8600
  • 250:$2.7100
  • 500:$2.4300
IRFP4229PBF
DISTI # 70017929		Infineon Technologies AGIRFP4229PBF N-channel MOSFET Transistor,44 A,250 V,3-Pin TO-247AC
RoHS: Compliant		0
  • 2:$4.8700
IRFP4229PBF
DISTI # 942-IRFP4229PBF		Infineon Technologies AGMOSFET MOSFT 250V 44A 46mOhm 72nC Qg
RoHS: Compliant		472
  • 1:$3.8800
  • 10:$3.3000
  • 100:$2.8600
  • 250:$2.7100
  • 500:$2.4300
IRFP4229PBFInternational RectifierPower Field-Effect Transistor, 44A I(D), 250V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		350
  • 1000:$1.9200
  • 500:$2.0200
  • 100:$2.1100
  • 25:$2.2000
  • 1:$2.3600
IRFP4229PBF
DISTI # 6886998		Infineon Technologies AGMOSFET N-CHANNEL 250V 44A HEXFET TO247AC, PK335
  • 2:£3.0050
  • 12:£2.3900
IRFP4229PBF
DISTI # IRFP4229PBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,250V,44A,310W,TO247AC43
  • 1:$2.7600
  • 3:$2.5200
  • 10:$2.0500
  • 100:$1.7700
IRFP4229PBF
DISTI # IRFP4229PBF		Infineon Technologies AGN-Ch 250V 44A 310W 0,046R TO247AC
RoHS: Compliant		430
  • 5:€2.1300
  • 25:€1.5300
  • 100:€1.3300
  • 200:€1.2800
IRFP4229PBF
DISTI # 1436964		Infineon Technologies AGMOSFET, N, 250V, TO-247AC
RoHS: Compliant		433
  • 1:$6.1500
  • 10:$5.2200
  • 100:$4.5300
  • 250:$4.2900
  • 500:$3.8500
IRFP4229PBF
DISTI # 1436964		Infineon Technologies AGMOSFET, N, 250V, TO-247AC
RoHS: Compliant		472
  • 1:£3.0700
  • 10:£2.4400
  • 100:£2.1200
  • 250:£2.0000
  • 500:£1.8800
IRFP4229PBF
DISTI # XSLY00000000990		INFINEON/IRTO-247AC
RoHS: Compliant		3906
  • 400:$1.8100
  • 3906:$1.6900
IRFP4229PBF
DISTI # C1S327400166858		Infineon Technologies AGTrans MOSFET N-CH 250V 44A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		65
  • 10:$1.9200
  • 1:$2.5600
IRFP4229PBF
DISTI # C1S322000492176		Infineon Technologies AGTrans MOSFET N-CH 250V 44A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		6616
  • 1000:$1.6500
  • 500:$1.7800
  • 100:$2.3300
  • 50:$2.5400
  • 10:$3.0900
  • 1:$4.7600
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Disponibilidad
Valores:
225
En orden:
2208
Ingrese la cantidad:
El precio actual de IRFP4229PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,87 US$
3,87 US$
10
3,29 US$
32,90 US$
100
2,85 US$
285,00 US$
250
2,70 US$
675,00 US$
500
2,42 US$
1 210,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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