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SIZ320DT-T1-GE3

SIZ320DT-T1-GE3
Mfr. #:
SIZ320DT-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIZ320DT-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ320DT-T1-GE3 DatasheetSIZ320DT-T1-GE3 Datasheet (P4-P6)SIZ320DT-T1-GE3 Datasheet (P7-P9)SIZ320DT-T1-GE3 Datasheet (P10-P12)
ECAD Model:
Más información:
SIZ320DT-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAIR-3x3-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
30 A, 40 A
Rds On - Resistencia de la fuente de drenaje:
4.24 mOhms, 8.3 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.4 V
Vgs - Voltaje puerta-fuente:
- 12 V, 16 V
Qg - Carga de puerta:
9.5 nC, 17.8 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
16.7 W, 31 W
Configuración:
Doble
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
TAMAÑO
Tipo de transistor:
2 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
45 S, 68 S
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
28 ns, 45 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
15 ns, 20 ns
Tiempo típico de retardo de encendido:
8 ns, 12 ns
Tags
SiZ32, SiZ3, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
MOSFET Dual N-Channel 25V 30A@Q1/40A@Q2 9-Pin PowerPAIR T/R
***i-Key
MOSFET 2N-CH 25V 30/40A 8POWER33
***ark
Dual N-Channel 25-V (D-S) Mosfet
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SIZ320DT-T1-GE3
DISTI # V36:1790_17600287		Vishay IntertechnologiesDUAL N-CHANNEL 25-V (D-S) MOSFET0
    SIZ320DT-T1-GE3
    DISTI # SIZ320DT-T1-GE3CT-ND    		Vishay SiliconixMOSFET 2 N-CHANNEL 25V 8-POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		5860In Stock
    • 1000:$0.4333
    • 500:$0.5416
    • 100:$0.7311
    • 10:$0.9480
    • 1:$1.0800
    SIZ320DT-T1-GE3
    DISTI # SIZ320DT-T1-GE3DKR-ND    		Vishay SiliconixMOSFET 2 N-CHANNEL 25V 8-POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		5860In Stock
    • 1000:$0.4333
    • 500:$0.5416
    • 100:$0.7311
    • 10:$0.9480
    • 1:$1.0800
    SIZ320DT-T1-GE3
    DISTI # SIZ320DT-T1-GE3TR-ND    		Vishay SiliconixMOSFET 2N-CH 25V 30/40A 8POWER33
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		3000In Stock
    • 15000:$0.3418
    • 6000:$0.3549
    • 3000:$0.3812
    SIZ320DT-T1-GE3
    DISTI # SIZ320DT-T1-GE3    		Vishay IntertechnologiesMOSFET Dual N-Channel 25V 30A@Q1/40A@Q2 9-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ320DT-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 6000:$0.3469
    • 12000:$0.3369
    • 18000:$0.3229
    • 30000:$0.3139
    • 60000:$0.3059
    SIZ320DT-T1-GE3
    DISTI # 20AC3919    		Vishay IntertechnologiesDUAL N-CHANNEL 25-V (D-S) MOSFET0
    • 50000:$0.3090
    • 30000:$0.3230
    • 20000:$0.3470
    • 10000:$0.3710
    • 5000:$0.4020
    • 1:$0.4110
    SIZ320DT-T1-GE3
    DISTI # 78-SIZ320DT-T1-GE3    		Vishay IntertechnologiesMOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3
    RoHS: Compliant    		5959
    • 1:$0.9500
    • 10:$0.7630
    • 100:$0.5790
    • 500:$0.4780
    • 1000:$0.3830
    • 3000:$0.3470
    • 6000:$0.3230
    • 9000:$0.3110
    • 24000:$0.2990
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    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 63V 0.47uF X7R 1206 10%
    SMBJ43A-E3/52

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    OMO.#: OMO-SMBJ43A-E3-52-VISHAY

    		 TVS Diodes - Transient Voltage Suppressors 600W 43V 5% Uni
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    OMO.#: OMO-ESDA18-1K-STMICROELECTRONICS

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    Disponibilidad
    Valores:
    Available
    En orden:
    1988
    Ingrese la cantidad:
    El precio actual de SIZ320DT-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,95 US$
    0,95 US$
    10
    0,76 US$
    7,63 US$
    100
    0,58 US$
    57,90 US$
    500
    0,48 US$
    239,00 US$
    1000
    0,38 US$
    383,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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