FMR23N60E

FMR23N60E
Mfr. #:
FMR23N60E
Fabricante:
Fuji Electric Co Ltd
Descripción:
Power Field-Effect Transistor,23AI(D),600V,0.28ohm, 1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FMR23N60E Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FMR23, FMR2, FMR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
FMR23N60E
DISTI # FE0000000001051
Fuji Electric Co LtdPower Field-Effect Transistor,23AI(D),600V,0.28ohm, 1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
RoHS: Compliant
0 in Stock0 on Order
  • 500:$4.4100
  • 1:$4.7500
FMR23N60ES
DISTI # FE0000000001052
Fuji Electric Co LtdPower Field-Effect Transistor, 23A I(D),600V,0.28ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
RoHS: Compliant
0 in Stock0 on Order
    FMR23N60ESSC
    DISTI # FE0000000004660
    Fuji Electric Co LtdMOSFET
    RoHS: Compliant
    0 in Stock0 on Order
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      FMR23N60E

      Mfr.#: FMR23N60E

      OMO.#: OMO-FMR23N60E-1190

      Power Field-Effect Transistor,23AI(D),600V,0.28ohm, 1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
      FMR23N60ES

      Mfr.#: FMR23N60ES

      OMO.#: OMO-FMR23N60ES-1190

      Power Field-Effect Transistor, 23A I(D),600V,0.28ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
      FMR28N50E

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      OMO.#: OMO-FMR28N50E-1190

      Power Field-Effect Transistor, 28AI(D),500V,0.19ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET
      Disponibilidad
      Valores:
      Available
      En orden:
      1500
      Ingrese la cantidad:
      El precio actual de FMR23N60E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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      100
      0,00 US$
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      500
      0,00 US$
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      1000
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      0,00 US$
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