FMR21N55G

FMR21N55G
Mfr. #:
FMR21N55G
Fabricante:
Fuji Electric Co Ltd
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FMR21N55G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FMR2, FMR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
FMR21N50ESISCTO-3PF5000
    FMR21N50ES
    DISTI # FE0000000001048
    Fuji Electric Co LtdPower Field-Effect Transistor, 21A I(D),500V,0.27ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
    RoHS: Compliant
    0 in Stock0 on Order
      FMR21N50ESSC
      DISTI # FE0000000004655
      Fuji Electric Co LtdMOSFET
      RoHS: Compliant
      0 in Stock0 on Order
      • 500:$2.0900
      • 1:$2.2500
      Imagen Parte # Descripción
      FMR202

      Mfr.#: FMR202

      OMO.#: OMO-FMR202-1190

      Nuevo y original
      FMR203

      Mfr.#: FMR203

      OMO.#: OMO-FMR203-1190

      Nuevo y original
      FMR21N50ES

      Mfr.#: FMR21N50ES

      OMO.#: OMO-FMR21N50ES-1190

      Power Field-Effect Transistor, 21A I(D),500V,0.27ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
      FMR21N55G

      Mfr.#: FMR21N55G

      OMO.#: OMO-FMR21N55G-1190

      Nuevo y original
      FMR23N50E

      Mfr.#: FMR23N50E

      OMO.#: OMO-FMR23N50E-1190

      Power Field-Effect Transistor, 23AI(D),500V,0.245ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET
      FMR23N57E,23N57E

      Mfr.#: FMR23N57E,23N57E

      OMO.#: OMO-FMR23N57E-23N57E-1190

      Nuevo y original
      FMR23N60E

      Mfr.#: FMR23N60E

      OMO.#: OMO-FMR23N60E-1190

      Power Field-Effect Transistor,23AI(D),600V,0.28ohm, 1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
      FMR23N60ES

      Mfr.#: FMR23N60ES

      OMO.#: OMO-FMR23N60ES-1190

      Power Field-Effect Transistor, 23A I(D),600V,0.28ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
      FMR28N50E

      Mfr.#: FMR28N50E

      OMO.#: OMO-FMR28N50E-1190

      Power Field-Effect Transistor, 28AI(D),500V,0.19ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET
      FMR28N50ES

      Mfr.#: FMR28N50ES

      OMO.#: OMO-FMR28N50ES-1190

      28A, 500V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET
      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de FMR21N55G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,00 US$
      0,00 US$
      10
      0,00 US$
      0,00 US$
      100
      0,00 US$
      0,00 US$
      500
      0,00 US$
      0,00 US$
      1000
      0,00 US$
      0,00 US$
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