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SIRA00DP-T1-GE3

SIRA00DP-T1-GE3
Mfr. #:
SIRA00DP-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 30V 100A PPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIRA00DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SIRA00DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SIRA00DP-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET
Paquete-Estuche
PowerPAKR SO-8
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
PowerPAKR SO-8
Configuración
Fuente triple de drenaje cuádruple simple
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
104W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
11700pF @ 15V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
100A (Tc)
Rds-On-Max-Id-Vgs
1 mOhm @ 20A, 10V
Vgs-th-Max-Id
2.2V @ 250μA
Puerta-Carga-Qg-Vgs
220nC @ 10V
Disipación de potencia Pd
104 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
11 ns
Hora de levantarse
14 ns
Vgs-Puerta-Fuente-Voltaje
2.2 V
Id-corriente-de-drenaje-continua
60 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
1 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
67 ns
Tiempo de retardo de encendido típico
18 ns
Qg-Gate-Charge
66 nC
Transconductancia directa-Mín.
140 S
Tags
SIRA00DP-T1, SIRA00DP-T, SIRA00, SIRA0, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SIRA00DP-T1-GE3
DISTI # V72:2272_09216064		Vishay IntertechnologiesTrans MOSFET N-CH 30V 58A 8-Pin PowerPAK SO T/R
RoHS: Compliant		2
  • 1:$1.0013
SIRA00DP-T1-GE3
DISTI # SIRA00DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 100A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1In Stock
  • 1000:$1.1569
  • 500:$1.3963
  • 100:$1.7952
  • 10:$2.2340
  • 1:$2.4700
SIRA00DP-T1-GE3
DISTI # SIRA00DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 100A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1In Stock
  • 1000:$1.1569
  • 500:$1.3963
  • 100:$1.7952
  • 10:$2.2340
  • 1:$2.4700
SIRA00DP-T1-GE3
DISTI # SIRA00DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 100A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.0457
SIRA00DP-T1-GE3
DISTI # SIRA00DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 58A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA00DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.0249
  • 6000:$0.9939
  • 12000:$0.9539
  • 18000:$0.9269
  • 30000:$0.9019
SIRA00DP-T1-GE3
DISTI # SIRA00DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 58A 8-Pin PowerPAK SO T/R (Alt: SIRA00DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIRA00DP-T1-GE3
    DISTI # 70AC6478    		Vishay Intertechnologies 0
    • 1:$2.4700
    • 25:$2.2300
    • 50:$2.0100
    • 100:$1.8000
    • 250:$1.6000
    • 500:$1.4000
    • 1000:$1.1600
    SIRA00DP-T1-GE3
    DISTI # 99W9548    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
    • 1:$1.0300
    • 3000:$1.0300
    • 6000:$0.9720
    SIRA00DP-T1-GE3
    DISTI # 70243882    		Vishay SiliconixSemiconcuctor,Mosfet,TrenchFET,N-Channel,30V,60A,1mohm @ 10V,PowerPAK SO-8
    RoHS: Compliant    		0
    • 3000:$0.9590
    SIRA00DP-T1-GE3
    DISTI # 78-SIRA00DP-T1-GE3    		Vishay IntertechnologiesMOSFET 30V 1mOhm@10V 60A N-Ch G-IV
    RoHS: Compliant    		0
    • 1:$2.1900
    • 10:$1.8200
    • 100:$1.4100
    • 500:$1.2400
    • 1000:$1.0300
    • 3000:$0.9510
    SIRA00DP-T1-GE3
    DISTI # 2114701    		Vishay IntertechnologiesMOSFET, 30V, 60A, PPAKSO-8
    RoHS: Compliant    		0
    • 1:$3.4700
    • 10:$2.8800
    • 100:$2.2300
    • 500:$1.9700
    • 1000:$1.6300
    • 3000:$1.5100
    SIRA00DP-T1-GE3
    DISTI # 2918678    		Vishay Intertechnologies 
    RoHS: Compliant    		0
    • 1:$3.4000
    • 25:$2.9700
    • 50:$2.5700
    • 100:$2.3600
    • 250:$2.2200
    • 500:$2.1000
    SIRA00DP-T1-GE3
    DISTI # 2918678    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, 150DEG C, 104W
    RoHS: Compliant    		0
    • 1:£2.1700
    • 25:£1.9600
    • 50:£1.7700
    • 100:£1.5900
    • 250:£1.4100
    SIRA00DP-T1-GE3Vishay IntertechnologiesMOSFET 30V 1mOhm@10V 60A N-Ch G-IV
    RoHS: Compliant    		Americas -
      SIRA00DP-T1-GE3.Vishay IntertechnologiesMOSFET 30V 1mOhm@10V 60A N-Ch G-IV
      RoHS: Compliant      		Americas -
      • 10:$1.4580
      • 100:$1.3550
      • 250:$1.2810
      • 500:$1.1170
      • 1000:$1.0680
      Imagen Parte # Descripción
      SIRA00DP-T1-GE3

      Mfr.#: SIRA00DP-T1-GE3

      OMO.#: OMO-SIRA00DP-T1-GE3

      		 MOSFET 30V 1mOhm@10V 60A N-Ch G-IV
      SIRA00DP-T1-RE3

      Mfr.#: SIRA00DP-T1-RE3

      OMO.#: OMO-SIRA00DP-T1-RE3

      		 MOSFET 30V Vds TrenchFET PowerPAK SO-8
      SIRA00DP-T1-GE3-CUT TAPE

      Mfr.#: SIRA00DP-T1-GE3-CUT TAPE

      OMO.#: OMO-SIRA00DP-T1-GE3-CUT-TAPE-1190

      		 Nuevo y original
      SIRA00DP

      Mfr.#: SIRA00DP

      OMO.#: OMO-SIRA00DP-1190

      		 Nuevo y original
      SIRA00DP-T1-GE3

      Mfr.#: SIRA00DP-T1-GE3

      OMO.#: OMO-SIRA00DP-T1-GE3-VISHAY

      		 MOSFET N-CH 30V 100A PPAK SO-8
      SIRA00DP-TI-GE3

      Mfr.#: SIRA00DP-TI-GE3

      OMO.#: OMO-SIRA00DP-TI-GE3-1190

      		 Nuevo y original
      SIRA00DP-T1-RE3

      Mfr.#: SIRA00DP-T1-RE3

      OMO.#: OMO-SIRA00DP-T1-RE3-VISHAY

      		 MOSFET N-CH 30V 100A POWERPAKSO
      Disponibilidad
      Valores:
      Available
      En orden:
      5000
      Ingrese la cantidad:
      El precio actual de SIRA00DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,32 US$
      1,32 US$
      10
      1,25 US$
      12,54 US$
      100
      1,19 US$
      118,80 US$
      500
      1,12 US$
      561,00 US$
      1000
      1,06 US$
      1 056,00 US$
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