IPD30N06S215ATMA2

Mfr. #:: IPD30N06S215ATMA2
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-CH 55V 30A TO252-3
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPD30N06S215ATMA2 Ficha de datos
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Fabricante: Infineon Technologies

categoria de producto: Transistores - FET, MOSFET - Sencillo

embalaje: Carrete

Alias de parte: IPD30N06S2-15 SP001061724

Unidad de peso: 0.139332 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: TO-252-3

Tecnología: Si

Número de canales: 1 Channel

Configuración: Único

Tipo transistor: 1 N-Channel

Disipación de potencia Pd: 136 W

Temperatura máxima de funcionamiento: + 175 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 19 ns

Hora de levantarse: 28 ns

Vgs-Puerta-Fuente-Voltaje: +/- 20 V

Id-corriente-de-drenaje-continua: 30 A

Vds-Drain-Source-Breakdown-Voltage: 55 V

Vgs-th-Gate-Source-Threshold-Voltage: 3 V

Resistencia a la fuente de desagüe de Rds: 11.3 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 32 ns

Tiempo de retardo de encendido típico: 13 ns

Qg-Gate-Charge: 41 nC

Transconductancia directa-Mín.: -

Modo de canal: Mejora

Tags: IPD30N06S215A, IPD30N06S21, IPD30N06S2, IPD30N06S, IPD30N06, IPD30N0, IPD30N, IPD30, IPD3, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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IPD30N06S215ATMA2 Descripción

***ure Electronics: N-Channel 55 V 14.7 mOhm 110 nC OptiMOS® Power-Transistor - PG-TO252-3-11

***ark: Mosfet Transistor, N Channel, 30 A, 55 V, 0.0113 Ohm, 10 V, 3 V

***ical: Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPD30N06S215ATMA2 DISTI # V72:2272_06384725	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2435	75000:$0.4069 30000:$0.4111 15000:$0.4153 6000:$0.4194 3000:$0.4237 1000:$0.4492 500:$0.5506 250:$0.6002 100:$0.6212 50:$0.7239 25:$0.7557 10:$0.7880 1:$0.8982
IPD30N06S215ATMA2 DISTI # IPD30N06S215ATMA2CT-ND	Infineon Technologies AG	MOSFET N-CH 55V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2882In Stock	1000:$0.5741 500:$0.7272 100:$0.9377 10:$1.1860 1:$1.3400
IPD30N06S215ATMA2 DISTI # IPD30N06S215ATMA2DKR-ND	Infineon Technologies AG	MOSFET N-CH 55V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2882In Stock	1000:$0.5741 500:$0.7272 100:$0.9377 10:$1.1860 1:$1.3400
IPD30N06S215ATMA2 DISTI # IPD30N06S215ATMA2TR-ND	Infineon Technologies AG	MOSFET N-CH 55V 30A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.5202
IPD30N06S215ATMA2 DISTI # 20128351	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	17500	2500:$0.5221
IPD30N06S215ATMA2 DISTI # 28976053	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2435	1000:$0.4492 500:$0.5506 250:$0.6002 100:$0.6212 50:$0.7239 25:$0.7557 15:$0.7880
IPD30N06S215ATMA2 DISTI # IPD30N06S215ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD30N06S215ATMA2) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4859 5000:$0.4689 10000:$0.4519 15000:$0.4369 25000:$0.4289
IPD30N06S215ATMA2 DISTI # SP001061724	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R (Alt: SP001061724) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.7539 5000:€0.5879 10000:€0.5259 15000:€0.4779 25000:€0.4479
IPD30N06S215ATMA2 DISTI # 34AC1670	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0113ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	2470	1:$1.1100 10:$0.9460 25:$0.8730 50:$0.8000 100:$0.7270 250:$0.6850 500:$0.6420 1000:$0.5070
IPD30N06S215ATMA2 DISTI # 726-IPD30N06S215ATM2	Infineon Technologies AG	MOSFET N-CHANNEL_55/60V RoHS: Compliant	4979	1:$1.1100 10:$0.9460 100:$0.7270 500:$0.6420 1000:$0.5070 2500:$0.4500
IPD30N06S215ATMA2 DISTI # 2781082	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-252 RoHS: Compliant	2470	5:£0.8060 25:£0.7230 100:£0.5560 250:£0.5240 500:£0.4910
IPD30N06S215ATMA2 DISTI # 2781082	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-252 RoHS: Compliant	2470	5:$1.6600 25:$1.4400 100:$1.1800 250:$0.9950 500:$0.8610 1000:$0.8140 5000:$0.7720
IPD30N06S215ATMA2 DISTI # C1S322000624456	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2435	100:$0.5701 50:$0.6334 25:$0.7038 10:$0.7821
IPD30N06S215ATMA2 DISTI # C1S322000610532	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	17500	2500:$0.5630

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Imagen	Parte #	Descripción
	Mfr.#: IPD30N06S2L13ATMA4 OMO.#: OMO-IPD30N06S2L13ATMA4	MOSFET N-CHANNEL_55/60V
	Mfr.#: IPD30N06S4L23ATMA2 OMO.#: OMO-IPD30N06S4L23ATMA2	MOSFET MOSFET
	Mfr.#: IPD30N06S215ATMA2 OMO.#: OMO-IPD30N06S215ATMA2	MOSFET N-CHANNEL_55/60V
	Mfr.#: IPD30N06S2L23ATMA1 OMO.#: OMO-IPD30N06S2L23ATMA1	MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
	Mfr.#: IPD30N06S2-15 2N0615 OMO.#: OMO-IPD30N06S2-15-2N0615-1190	Nuevo y original
	Mfr.#: IPD30N06S4L23ATMA1 OMO.#: OMO-IPD30N06S4L23ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 30A TO252-3
	Mfr.#: IPD30N06S2 OMO.#: OMO-IPD30N06S2-1190	Nuevo y original
	Mfr.#: IPD30N06S2-23 OMO.#: OMO-IPD30N06S2-23-1190	MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
	Mfr.#: IPD30N06S215 OMO.#: OMO-IPD30N06S215-1190	Nuevo y original
	Mfr.#: IPD30N06S4L-23 OMO.#: OMO-IPD30N06S4L-23-1190	MOSFET N-Ch 60V 30A DPAK-2 OptiMOS-T2

Disponibilidad

Valores:: Available
En orden:: 1000
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El precio actual de IPD30N06S215ATMA2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,61 US$~~; ~~0,61 US$~~

10: ~~0,58 US$~~; ~~5,80 US$~~

100: ~~0,55 US$~~; ~~54,93 US$~~

500: ~~0,52 US$~~; ~~259,40 US$~~

1000: ~~0,49 US$~~; ~~488,30 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IPD30N06S215ATMA2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes