IPN80R3K3P7ATMA1

Mfr. #:: IPN80R3K3P7ATMA1
Fabricante:: Infineon Technologies
Descripción:: MOSFET LOW POWER_NEW
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPN80R3K3P7ATMA1 Ficha de datos
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Más información:: IPN80R3K3P7ATMA1 más información

Atributo del producto
Valor de atributo

Fabricante:: Infineon

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: SOT-223-3

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 800 V

Id - Corriente de drenaje continua:: 1.9 A

Rds On - Resistencia de la fuente de drenaje:: 2.8 Ohms

Vgs th - Voltaje umbral puerta-fuente:: 3.5 V

Vgs - Voltaje puerta-fuente:: 30 V

Qg - Carga de puerta:: 5.8 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 6.1 W

Configuración:: Único

Modo de canal:: Mejora

Embalaje:: Carrete

Tipo de transistor:: 1 N-Channel

Marca:: Infineon Technologies

Otoño:: 40 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 10 ns

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 40 ns

Tiempo típico de retardo de encendido:: 12 ns

Parte # Alias:: IPN80R3K3P7 SP001664992

Tags: IPN80, IPN8, IPN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPN80R3K3P7ATMA1 Descripción

***et Europe: CoolMOS P7 Power Transistor MOSFET 800V 1.9A 3-Pin PG-SOT223 T/R

***ical: Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) SOT-223 T/R

***ronik: N-CH 800V 1,9A 2800mOhm SOT223

***i-Key: COOLMOS P7 800V SOT-223

***ark: Mosfet, N-Ch, 800V, 1.9A, 6.1W, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:800V; On Resistance Rds(On):2.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 800V, 1.9A, 6.1W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:6.1W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CAN N, 800V, 1.9A, 6.1W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:1.9A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):2.8ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:6.1W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power

IPN80R3K3P7ATMA1 Más información

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

800V CoolMOS P7 MOSFETs: Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPN80R3K3P7ATMA1 DISTI # V72:2272_19084646	Infineon Technologies AG	IPN80R3K3P7	3000	3000:$0.2243 1000:$0.2646 500:$0.3192 250:$0.3425 100:$0.3429 25:$0.4295 10:$0.5058 1:$0.5883
IPN80R3K3P7ATMA1 DISTI # IPN80R3K3P7ATMA1CT-ND	Infineon Technologies AG	COOLMOS P7 800V SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2615In Stock	1000:$0.3635 500:$0.4456 100:$0.5891 10:$0.7530 1:$0.8600
IPN80R3K3P7ATMA1 DISTI # IPN80R3K3P7ATMA1DKR-ND	Infineon Technologies AG	COOLMOS P7 800V SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2615In Stock	1000:$0.3635 500:$0.4456 100:$0.5891 10:$0.7530 1:$0.8600
IPN80R3K3P7ATMA1 DISTI # IPN80R3K3P7ATMA1TR-ND	Infineon Technologies AG	COOLMOS P7 800V SOT-223 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.2878 15000:$0.2932 6000:$0.3032 3000:$0.3231
IPN80R3K3P7ATMA1 DISTI # 30680852	Infineon Technologies AG	IPN80R3K3P7	3000	3000:$0.2411 1000:$0.2844 500:$0.3431 250:$0.3682 100:$0.3686 28:$0.4617
IPN80R3K3P7ATMA1 DISTI # IPN80R3K3P7ATMA1	Infineon Technologies AG	CoolMOS P7 Power Transistor MOSFET 800V 1.9A 3-Pin PG-SOT223 T/R - Tape and Reel (Alt: IPN80R3K3P7ATMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 3000	3000:$0.2599 6000:$0.2509 12000:$0.2419 18000:$0.2339 30000:$0.2289
IPN80R3K3P7ATMA1 DISTI # SP001664992	Infineon Technologies AG	CoolMOS P7 Power Transistor MOSFET 800V 1.9A 3-Pin PG-SOT223 T/R (Alt: SP001664992) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.3349 6000:€0.2739 12000:€0.2509 18000:€0.2319 30000:€0.2149
IPN80R3K3P7ATMA1 DISTI # 93AC7128	Infineon Technologies AG	MOSFET, N-CH, 800V, 1.9A, 6.1W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	2795	1000:$0.2320 500:$0.2510 250:$0.2700 100:$0.2900 50:$0.3430 25:$0.3960 10:$0.4500 1:$0.5360
IPN80R3K3P7ATMA1 DISTI # 726-IPN80R3K3P7ATMA1	Infineon Technologies AG	MOSFET LOW POWER_NEW RoHS: Compliant	11544	1:$0.6700 10:$0.5620 100:$0.3620 1000:$0.2900 3000:$0.2450 9000:$0.2360 24000:$0.2270
IPN80R3K3P7ATMA1 DISTI # 2986363	Infineon Technologies AG	MOSFET, N-CH, 800V, 1.9A, 6.1W, SOT-223 RoHS: Compliant	2795	500:£0.2530 250:£0.2750 100:£0.2980 25:£0.4260 5:£0.4680
IPN80R3K3P7ATMA1 DISTI # 2986363	Infineon Technologies AG	MOSFET, N-CH, 800V, 1.9A, 6.1W, SOT-223 RoHS: Compliant	2795	5000:$0.3700 1000:$0.3800 500:$0.4500 250:$0.4900 100:$0.5300 25:$0.7600 5:$0.8300

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Disponibilidad

Valores:: 11
En orden:: 1994
Ingrese la cantidad:

El precio actual de IPN80R3K3P7ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,67 US$~~; ~~0,67 US$~~

10: ~~0,56 US$~~; ~~5,62 US$~~

100: ~~0,36 US$~~; ~~36,20 US$~~

1000: ~~0,29 US$~~; ~~290,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IPN80R3K3P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes