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IPN80R2K4P7ATMA1

IPN80R2K4P7ATMA1
Mfr. #:
IPN80R2K4P7ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET LOW POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPN80R2K4P7ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-223-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
2.5 A
Rds On - Resistencia de la fuente de drenaje:
2 Ohms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
7.5 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
6.3 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
30 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
40 ns
Tiempo típico de retardo de encendido:
8 ns
Parte # Alias:
IPN80R2K4P7 SP001664994
Tags
IPN80R2, IPN80, IPN8, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS P7 Power Transistor MOSFET 800V 2.5A 3-Pin PG-SOT223 T/R
***ical
Trans MOSFET N-CH 800V 2.5A 3-Pin(2+Tab) SOT-223 T/R
***ronik
N-CH 800V 2,5A 2000mOhm SOT223
***i-Key
COOLMOS P7 800V SOT-223
***ark
Mosfet, N-Ch, 800V, 2.5A, 6.3W, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(On):2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 2.5A, 6.3W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:6.3W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 800V, 2.5A, 6.3W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:2.5A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):2ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:6.3W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
Parte # Mfg. Descripción Valores Precio
IPN80R2K4P7ATMA1
DISTI # V72:2272_19084645		Infineon Technologies AGIPN80R2K4P72245
  • 1000:$0.3059
  • 500:$0.3211
  • 250:$0.3568
  • 100:$0.3963
  • 25:$0.5634
  • 10:$0.6886
  • 1:$0.8254
IPN80R2K4P7ATMA1
DISTI # IPN80R2K4P7ATMA1CT-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3391In Stock
  • 1000:$0.3525
  • 500:$0.4406
  • 100:$0.5574
  • 10:$0.7270
  • 1:$0.8300
IPN80R2K4P7ATMA1
DISTI # IPN80R2K4P7ATMA1DKR-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3391In Stock
  • 1000:$0.3525
  • 500:$0.4406
  • 100:$0.5574
  • 10:$0.7270
  • 1:$0.8300
IPN80R2K4P7ATMA1
DISTI # IPN80R2K4P7ATMA1TR-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.2852
  • 6000:$0.2888
  • 3000:$0.3101
IPN80R2K4P7ATMA1
DISTI # 30294848		Infineon Technologies AGIPN80R2K4P73000
  • 30000:$0.2553
  • 18000:$0.2603
  • 12000:$0.2692
  • 6000:$0.2791
  • 3000:$0.2900
IPN80R2K4P7ATMA1
DISTI # 28955736		Infineon Technologies AGIPN80R2K4P72245
  • 1000:$0.3288
  • 500:$0.3452
  • 250:$0.3836
  • 100:$0.4260
  • 25:$0.6057
IPN80R2K4P7ATMA1
DISTI # IPN80R2K4P7ATMA1		Infineon Technologies AGCoolMOS P7 Power Transistor MOSFET 800V 2.5A 3-Pin PG-SOT223 T/R - Tape and Reel (Alt: IPN80R2K4P7ATMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
  • 30000:$0.2579
  • 18000:$0.2629
  • 12000:$0.2719
  • 6000:$0.2819
  • 3000:$0.2929
IPN80R2K4P7ATMA1
DISTI # 93AC7127		Infineon Technologies AGMOSFET, N-CH, 800V, 2.5A, 6.3W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2780
  • 1000:$0.3290
  • 500:$0.3570
  • 250:$0.3840
  • 100:$0.4120
  • 50:$0.4870
  • 25:$0.5630
  • 10:$0.6380
  • 1:$0.7680
IPN80R2K4P7ATMA1
DISTI # 726-IPN80R2K4P7ATMA1		Infineon Technologies AGMOSFET LOW POWER_NEW
RoHS: Compliant		4129
  • 1:$0.7600
  • 10:$0.6320
  • 100:$0.4080
  • 1000:$0.3260
IPN80R2K4P7ATMA1
DISTI # IPN80R2K4P7		Infineon Technologies AGTransistor: N-MOSFET,unipolar,800V,1.7A,6.3W,PG-SOT2232987
  • 500:$0.3268
  • 100:$0.3552
  • 20:$0.3917
  • 5:$0.4384
  • 1:$0.5841
IPN80R2K4P7ATMA1
DISTI # 2986478		Infineon Technologies AGMOSFET, N-CH, 800V, 2.5A, 6.3W, SOT-2232780
  • 500:£0.2590
  • 250:£0.2790
  • 100:£0.2980
  • 25:£0.4760
  • 5:£0.5210
IPN80R2K4P7ATMA1
DISTI # XSKDRABS0031939		Infineon Technologies AGDS1990SERIES6V1-WIRESMARTCARDINTERFACEIC-IBUTTON-F5
RoHS: Compliant		9000 in Stock0 on Order
  • 9000:$0.3805
  • 3000:$0.4076
IPN80R2K4P7ATMA1
DISTI # 2986478		Infineon Technologies AGMOSFET, N-CH, 800V, 2.5A, 6.3W, SOT-223
RoHS: Compliant		2780
  • 1000:$0.4080
  • 500:$0.4590
  • 250:$0.4990
  • 100:$0.5390
  • 25:$0.7700
  • 5:$0.8460
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IPN80R3K3P7ATMA1

Mfr.#: IPN80R3K3P7ATMA1

OMO.#: OMO-IPN80R3K3P7ATMA1-INFINEON-TECHNOLOGIES

 COOLMOS P7 800V SOT-223
MAX31855KASA+

Mfr.#: MAX31855KASA+

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EVAL45W19VFLYBP7TOBO1

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OMO.#: OMO-GRT21BR61H475KE13L-MURATA-ELECTRONICS

 Cap Ceramic 4.7uF 50V X5R 10% Pad SMD 0805 85C Automotive T/R
Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de IPN80R2K4P7ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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