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AS4C32M16D1-5BINTR

AS4C32M16D1-5BINTR
Mfr. #:
AS4C32M16D1-5BINTR
Fabricante:
Alliance Memory
Descripción:
DRAM
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AS4C32M16D1-5BINTR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
AS4C32M16D1-5BINTR más información
Atributo del producto
Valor de atributo
Fabricante:
Memoria de la Alianza
Categoria de producto:
DRACMA
RoHS:
Y
Escribe:
SDRAM - DDR1
Ancho del bus de datos:
16 bit
Organización:
32 M x 16
Paquete / Caja:
TFBGA-60
Tamaño de la memoria:
512 Mbit
Frecuencia máxima de reloj:
200 MHz
Tiempo de acceso:
0.7 ns
Voltaje de suministro - Máx:
2.7 V
Voltaje de suministro - Min:
2.3 V
Corriente de suministro - Máx .:
90 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Serie:
AS4C32M16D1
Embalaje:
Carrete
Marca:
Memoria de la Alianza
Estilo de montaje:
SMD / SMT
Sensible a la humedad:
Yes
Tipo de producto:
DRACMA
Cantidad de paquete de fábrica:
2500
Subcategoría:
Memoria y almacenamiento de datos
Tags
AS4C32M16D1-5B, AS4C32M16D1-5, AS4C32M16D1, AS4C32M16D, AS4C32M1, AS4C3, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***se
512Mb DDR1 32M X 16 2.5V 60-ball BGA 200 MHz Industriall Temp Tape and Reel
***metry Electronics
DDR1 512MB 200Mhz 400Mbps/pin 2.5V 32M x 16 60ball TFBGA
***i-Key
IC DRAM 512MBIT PARALLEL 60TFBGA
DDR1 Synchronous DRAM
Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Parte # Mfg. Descripción Valores Precio
AS4C32M16D1-5BINTR
DISTI # AS4C32M16D1-5BINTR-ND		Alliance Memory IncIC DRAM 512M PARALLEL 60TFBGA
RoHS: Not compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$3.7353
AS4C32M16D1-5BINTR
DISTI # AS4C32M16D1-5BINTR		Alliance Memory IncINDUSTRIAL (-40 ~ 95°C)/ - Tape and Reel (Alt: AS4C32M16D1-5BINTR)
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$3.1900
  • 5000:$3.0900
  • 10000:$2.9900
  • 15000:$2.8900
  • 25000:$2.7900
AS4C32M16D1-5BIN
DISTI # 913-4C32M16D1-5BIN		Alliance Memory IncDRAM
RoHS: Compliant		542
  • 1:$5.3700
  • 10:$4.8700
  • 25:$4.7700
  • 50:$4.7400
  • 100:$4.2500
  • 250:$4.2300
  • 500:$4.0800
  • 1000:$3.7000
  • 2000:$3.5300
AS4C32M16D1-5BINTR
DISTI # 913-4C32M16D1-5BINTR		Alliance Memory IncDRAM
RoHS: Compliant		0
  • 2500:$3.6000
AS4C32M16D1-5BINTRAlliance Memory IncSDRAM 512M-Bit 32M x 16 2.5V 60-Pin TFBGA2500
    Imagen Parte # Descripción
    AS4C32M16D1A-5TCNTR

    Mfr.#: AS4C32M16D1A-5TCNTR

    OMO.#: OMO-AS4C32M16D1A-5TCNTR

    		 DRAM
    AS4C32M16D3-12BCN

    Mfr.#: AS4C32M16D3-12BCN

    OMO.#: OMO-AS4C32M16D3-12BCN

    		 DRAM 512M 1.5V 800Mhz 32M x 16 DDR3
    AS4C32M16SB-7TCN

    Mfr.#: AS4C32M16SB-7TCN

    OMO.#: OMO-AS4C32M16SB-7TCN

    		 DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
    AS4C32M16D1-5BCNTR

    Mfr.#: AS4C32M16D1-5BCNTR

    OMO.#: OMO-AS4C32M16D1-5BCNTR

    		 DRAM 512M 2.5V 200Mhz 32M x 16 DDR1
    AS4C32M16SB-7TINTR

    Mfr.#: AS4C32M16SB-7TINTR

    OMO.#: OMO-AS4C32M16SB-7TINTR-ALLIANCE-MEMORY

    		 512Mb SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits (Alt: AS4C32M16SB-7TINTR)
    AS4C32M16D2A-25BCNTR

    Mfr.#: AS4C32M16D2A-25BCNTR

    OMO.#: OMO-AS4C32M16D2A-25BCNTR-ALLIANCE-MEMORY

    		 DRAM Chip DDR2 SDRAM 512M-Bit 32M x 16 1.8V 84-Pin FBGA T/R (Alt: AS4C32M16D2A-25BCNTR)
    AS4C32M16S-7TINTR

    Mfr.#: AS4C32M16S-7TINTR

    OMO.#: OMO-AS4C32M16S-7TINTR-ALLIANCE-MEMORY

    		 DRAM 512Mb, 3.3V, 143Mhz 32M x 16 SDRAM
    AS4C32M16MD1-5BINTR

    Mfr.#: AS4C32M16MD1-5BINTR

    OMO.#: OMO-AS4C32M16MD1-5BINTR-ALLIANCE-MEMORY

    		 IC DRAM 512M PARALLEL 60FBGA
    AS4C32M16MSA-6BINTR

    Mfr.#: AS4C32M16MSA-6BINTR

    OMO.#: OMO-AS4C32M16MSA-6BINTR-ALLIANCE-MEMORY

    		 IC DRAM 512M PARALLEL 54FBGA
    AS4C32M16D3L-12BINTR

    Mfr.#: AS4C32M16D3L-12BINTR

    OMO.#: OMO-AS4C32M16D3L-12BINTR-ALLIANCE-MEMORY

    		 IC DRAM 512M PARALLEL 96FBGA
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de AS4C32M16D1-5BINTR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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