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SIRC10DP-T1-GE3

SIRC10DP-T1-GE3
Mfr. #:
SIRC10DP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIRC10DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIRC10DP-T1-GE3 DatasheetSIRC10DP-T1-GE3 Datasheet (P4-P6)SIRC10DP-T1-GE3 Datasheet (P7)
ECAD Model:
Más información:
SIRC10DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
60 A
Rds On - Resistencia de la fuente de drenaje:
3.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.4 V
Vgs - Voltaje puerta-fuente:
20 V, - 16 V
Qg - Carga de puerta:
24 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
43 W
Configuración:
Único
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SEÑOR
Marca:
Vishay / Siliconix
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
30 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
15 ns
Tiempo típico de retardo de encendido:
10 ns
Unidad de peso:
0.017870 oz
Tags
SIRC1, SIRC, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
MOSFET N-Channel 30V 60A 8-Pin PowerPAK SO T/R
***ment14 APAC
MOSFET, N CH+SCHOTTKY, 30V, POWERPAK SO
***i-Key
MOSFET N-CH 30V 60A POWERPAKSO-8
***ark
Mosfet, N Ch+Schottky, 30V, Powerpak So; Transistor Polarity:n Channel + Schottky; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0029Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Rohs Compliant: Yes
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SIRC10DP-T1-GE3
DISTI # V36:1790_17600302		Vishay IntertechnologiesN-Channel 30 V (D-S) MOSFET with Schottky Diode0
  • 6000000:$0.3443
  • 3000000:$0.3444
  • 600000:$0.3541
  • 60000:$0.3688
  • 6000:$0.3712
SIRC10DP-T1-GE3
DISTI # SIRC10DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5490In Stock
  • 1000:$0.4096
  • 500:$0.5189
  • 100:$0.6281
  • 10:$0.8060
  • 1:$0.9000
SIRC10DP-T1-GE3
DISTI # SIRC10DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5490In Stock
  • 1000:$0.4096
  • 500:$0.5189
  • 100:$0.6281
  • 10:$0.8060
  • 1:$0.9000
SIRC10DP-T1-GE3
DISTI # SIRC10DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.3394
  • 6000:$0.3526
  • 3000:$0.3712
SIRC10DP-T1-GE3
DISTI # SIRC10DP-T1-GE3		Vishay IntertechnologiesMOSFET N-Channel 30V 60A 8-Pin PowerPAK SO T/R (Alt: SIRC10DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
    SIRC10DP-T1-GE3
    DISTI # SIRC10DP-T1-GE3    		Vishay IntertechnologiesMOSFET N-Channel 30V 60A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRC10DP-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$0.3229
    • 30000:$0.3319
    • 18000:$0.3419
    • 12000:$0.3559
    • 6000:$0.3669
    SIRC10DP-T1-GE3
    DISTI # SIRC10DP-T1-GE3    		Vishay IntertechnologiesMOSFET N-Channel 30V 60A 8-Pin PowerPAK SO T/R (Alt: SIRC10DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.4229
    • 18000:€0.4419
    • 12000:€0.4999
    • 6000:€0.6159
    • 3000:€0.8589
    SIRC10DP-T1-GE3
    DISTI # 20AC3880    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET W/SCHOTT0
    • 10000:$0.3210
    • 6000:$0.3290
    • 4000:$0.3410
    • 2000:$0.3790
    • 1000:$0.4170
    • 1:$0.4350
    SIRC10DP-T1-GE3
    DISTI # 78-SIRC10DP-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		8844
    • 1:$0.8800
    • 10:$0.7270
    • 100:$0.5580
    • 500:$0.4790
    • 1000:$0.3780
    • 3000:$0.3530
    • 6000:$0.3350
    • 9000:$0.3230
    • 24000:$0.3130
    SIRC10DP-T1-GE3
    DISTI # 2747684    		Vishay IntertechnologiesMOSFET, N CH+SCHOTTKY, 30V, POWERPAK SO5940
    • 500:£0.3480
    • 250:£0.3770
    • 100:£0.4050
    • 10:£0.5280
    • 1:£0.6380
    SIRC10DP-T1-GE3
    DISTI # 2747684    		Vishay IntertechnologiesMOSFET, N CH+SCHOTTKY, 30V, POWERPAK SO
    RoHS: Compliant    		5807
    • 1000:$0.6180
    • 500:$0.7820
    • 100:$0.9470
    • 10:$1.2200
    • 1:$1.3600
    Imagen Parte # Descripción
    RSF015N06FRATL

    Mfr.#: RSF015N06FRATL

    OMO.#: OMO-RSF015N06FRATL

    		 MOSFET Nch 60V Vds 1.5A 0.255Rds(on) 2Qg
    CY8CKIT-149

    Mfr.#: CY8CKIT-149

    OMO.#: OMO-CY8CKIT-149

    		 Development Boards & Kits - ARM PSoC 4100S 128K Prototyp Kit
    BB-GEVK

    Mfr.#: BB-GEVK

    OMO.#: OMO-BB-GEVK

    		 Other Development Tools Dev Kit Base Board Eval Board
    CY8CKIT-062-WIFI-BT

    Mfr.#: CY8CKIT-062-WIFI-BT

    OMO.#: OMO-CY8CKIT-062-WIFI-BT

    		 Development Boards & Kits - ARM CY8CKIT-062-WiFi-BT PSoC 6 Pioneer Kit
    M22-6540242R

    Mfr.#: M22-6540242R

    OMO.#: OMO-M22-6540242R

    		 Headers & Wire Housings 2 WAY SIL HORIZ SMT SKT T&R
    DX07B024JJ3R1600

    Mfr.#: DX07B024JJ3R1600

    OMO.#: OMO-DX07B024JJ3R1600

    		 USB Connectors DX07 Lower Profile Mid-Mount Receptacle
    DX07B024JJ3R1600

    Mfr.#: DX07B024JJ3R1600

    OMO.#: OMO-DX07B024JJ3R1600-JAE-ELECTRONICS

    		 CONN RCP USB3.1 TYPEC 24P SMD RA
    RSF015N06FRATL

    Mfr.#: RSF015N06FRATL

    OMO.#: OMO-RSF015N06FRATL-ROHM-SEMI

    		 NCH 60V 1.5A POWER MOSFET
    DF13EA-30DP-1.25V(51)

    Mfr.#: DF13EA-30DP-1.25V(51)

    OMO.#: OMO-DF13EA-30DP-1-25V-51--HIROSE

    		 Headers & Wire Housings 1.25 DR SRT PIN HDR 30P SMT GLD W/O BOSS
    CY8CKIT-062-WIFI-BT

    Mfr.#: CY8CKIT-062-WIFI-BT

    OMO.#: OMO-CY8CKIT-062-WIFI-BT-CYPRESS-SEMICONDUCTOR

    		 PSOC6 WIFI BT PIONEER EVAL
    Disponibilidad
    Valores:
    Available
    En orden:
    1991
    Ingrese la cantidad:
    El precio actual de SIRC10DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,88 US$
    0,88 US$
    10
    0,73 US$
    7,27 US$
    100
    0,56 US$
    55,80 US$
    500
    0,48 US$
    239,50 US$
    1000
    0,38 US$
    378,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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