OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

STW70N60DM2

STW70N60DM2
Mfr. #:
STW70N60DM2
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-channel 600 V, 0.032 Ohm typ., 67 A MDmesh DM2 Power MOSFET in TO-247 package
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STW70N60DM2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STW70N60DM2 más información STW70N60DM2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
66 A
Rds On - Resistencia de la fuente de drenaje:
42 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
25 V
Qg - Carga de puerta:
121 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
446 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
MDmesh
Serie:
STW70N60DM2
Marca:
STMicroelectronics
Otoño:
10.4 ns
Tipo de producto:
MOSFET
Hora de levantarse:
67 ns
Cantidad de paquete de fábrica:
600
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
112 ns
Tiempo típico de retardo de encendido:
32 ns
Unidad de peso:
1.340411 oz
Tags
STW70N60D, STW70N60, STW70N6, STW70N, STW70, STW7, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.032 Ohm typ., 67 A MDmesh DM2 Power MOSFET in TO-247 package
***ical
Trans MOSFET N-CH 600V 66A 3-Pin(3+Tab) TO-247 Tube
***enic
600V 66A 446W 42m´Î@10V33A 5V@250Ã×A N Channel TO-247AC MOSFETs ROHS
***ark
MOSFET, N-CH, 600V, 66A, 150DEG C, 446W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:66A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***el Electronic
IC TXRX T1/E1 QUAD 3.3V 256-BGA
***icroelectronics SCT
Power MOSFETs, 600V, 66A, TO-247, Tube
***icroelectronics
N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in TO-247 package
***ure Electronics
STW70N60 Series 600 V 0.040 Ohm Flange Mount N-Channel Power Mosfet - TO-247
***ark
MOSFET, N-CH, 600V, 68A, 150DEG C, 450W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:68A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 68A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPREMOS®, FRFET®, 600 V, 72.8 A, 38 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 72.8A I(D), 600V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
MOSFET, N CH, 600V, 72.8A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:72.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0287ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 77 A, 41 mΩ, TO-247
***ure Electronics
Single N-Channel 600 V 41 mOhm 380 nC 592 W Silicon Through Hole Mosfet TO-247-3
*** Source Electronics
Trans MOSFET N-CH 600V 77A 3-Pin(3+Tab) TO-247 Tube / MOSFET N CH 600V 77A TO-247
***roFlash
Power Field-Effect Transistor, 77A I(D), 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET family, utilizes advanced charge-balance technology for outstandingly low on-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dv/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency
***ure Electronics
Single N-Channel 600 V 40 mOhm 107 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, N-Ch, 600V, 50A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
***ure Electronics
IPW60R041P6 Series 600 V 77.5 A CoolMOS™ P6 Power Transistor - TO-247-3
***ark
MOSFET, N-CH, 600V, 77.5A, 150DEG C/481W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:77.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***nell
MOSFET, N-CH, 600V, 77.5A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 77.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 481W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P6 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***icroelectronics
N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package
***ure Electronics
N-Channel 600 V 60 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247
***ark
MOSFET, N-CH, 600V, 50A, 150DEG C, 360W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MDmesh DM2 Power MOSFETs
STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descripción Valores Precio
STW70N60DM2
DISTI # V36:1790_13795944		STMicroelectronicsTrans MOSFET N-CH 600V 66A 3-Pin(3+Tab) TO-247 Tube1
  • 510:$6.3380
  • 120:$7.3680
  • 30:$8.5660
  • 10:$8.9800
  • 1:$10.9153
STW70N60DM2
DISTI # 497-16345-5-ND		STMicroelectronicsMOSFET N-CH 600V 66A
RoHS: Compliant
Min Qty: 1
Container: Tube		239In Stock
  • 510:$6.8355
  • 120:$7.8498
  • 30:$9.0407
  • 10:$9.4820
  • 1:$10.5000
STW70N60DM2
DISTI # 33598844		STMicroelectronicsTrans MOSFET N-CH 600V 66A 3-Pin(3+Tab) TO-247 Tube150
  • 2:$5.7567
STW70N60DM2
DISTI # STW70N60DM2		STMicroelectronicsTrans MOSFET N-CH 600V 66A 3-Pin TO-247 Tube (Alt: STW70N60DM2)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 180
  • 1000:€5.0900
  • 500:€5.3900
  • 100:€5.5900
  • 50:€5.7900
  • 25:€6.0900
  • 10:€6.2900
  • 1:€6.8900
STW70N60DM2
DISTI # STW70N60DM2		STMicroelectronicsTrans MOSFET N-CH 600V 66A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW70N60DM2)
RoHS: Not Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 6000:$5.2900
  • 3600:$5.3900
  • 2400:$5.6900
  • 1200:$5.9900
  • 600:$6.1900
STW70N60DM2
DISTI # 79Y9483		STMicroelectronicsMOSFET, N-CH, 600V, 66A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:66A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes483
  • 500:$6.5800
  • 250:$7.2100
  • 100:$7.5400
  • 50:$8.1200
  • 25:$8.7000
  • 10:$9.1200
  • 1:$10.0900
STW70N60DM2
DISTI # 511-STW70N60DM2		STMicroelectronicsMOSFET N-channel 600 V, 0.032 Ohm typ., 67 A MDmesh DM2 Power MOSFET in TO-247 package
RoHS: Compliant		1213
  • 1:$9.9900
  • 10:$9.0300
  • 25:$8.6100
  • 100:$7.4700
  • 250:$7.1400
  • 500:$6.5100
  • 1000:$5.6700
STW70N60DM2
DISTI # 1116487P		STMicroelectronicsMOSFET N-CH 600V 66A MDMESH DM2 TO-247, TU180
  • 300:£6.1700
  • 90:£6.7500
  • 30:£7.3600
  • 10:£7.6900
STW70N60DM2
DISTI # STW70N60DM2		STMicroelectronicsTransistor: N-MOSFET,unipolar,600V,42A,446W,TO24728
  • 30:$9.9100
  • 10:$11.0400
  • 3:$13.7600
  • 1:$15.9500
STW70N60DM2
DISTI # 2531122		STMicroelectronicsMOSFET, N-CH, 600V, 66A, TO-247
RoHS: Compliant		484
  • 500:$9.8100
  • 250:$10.7600
  • 100:$11.2600
  • 25:$12.9800
  • 10:$13.6100
  • 1:$15.0500
STW70N60DM2
DISTI # 2531122		STMicroelectronicsMOSFET, N-CH, 600V, 66A, TO-247565
  • 100:£5.7600
  • 50:£6.2000
  • 10:£6.6400
  • 5:£7.7000
  • 1:£8.2600
Imagen Parte # Descripción
LTC2387CUH-16#PBF

Mfr.#: LTC2387CUH-16#PBF

OMO.#: OMO-LTC2387CUH-16-PBF

 Analog to Digital Converters - ADC 16-B, 15Msps SAR ADC
W25Q64JVSSIQ

Mfr.#: W25Q64JVSSIQ

OMO.#: OMO-W25Q64JVSSIQ

 NOR Flash spiFlash, 64M-bit, DTR, 4Kb Uniform Sector
STBR3012WY

Mfr.#: STBR3012WY

OMO.#: OMO-STBR3012WY

 Rectifiers Automotive high voltage rectifier for bridge applications
STW65N65DM2AG

Mfr.#: STW65N65DM2AG

OMO.#: OMO-STW65N65DM2AG

 MOSFET Automotive-grade N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package
LTV-356T

Mfr.#: LTV-356T

OMO.#: OMO-LTV-356T

 Transistor Output Optocouplers Optocoupler Phototrans
XP1001000-05R

Mfr.#: XP1001000-05R

OMO.#: OMO-XP1001000-05R

 Servers XPort XE Ext. Temp. without Encryption
FMP200JR-52-0R39

Mfr.#: FMP200JR-52-0R39

OMO.#: OMO-FMP200JR-52-0R39

 Metal Film Resistors - Through Hole 2W 0.39 Ohm 5%
MLF1608DR33JT000

Mfr.#: MLF1608DR33JT000

OMO.#: OMO-MLF1608DR33JT000

 Fixed Inductors
MLF1608DR33JT000

Mfr.#: MLF1608DR33JT000

OMO.#: OMO-MLF1608DR33JT000-TDK

 Fixed Inductors
LTV-356T

Mfr.#: LTV-356T

OMO.#: OMO-LTV-356T-LITE-ON

 Transistor Output Optocouplers Optocoupler Phototrans
Disponibilidad
Valores:
513
En orden:
2496
Ingrese la cantidad:
El precio actual de STW70N60DM2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
9,99 US$
9,99 US$
10
9,03 US$
90,30 US$
25
8,61 US$
215,25 US$
100
7,47 US$
747,00 US$
250
7,14 US$
1 785,00 US$
500
6,51 US$
3 255,00 US$
1000
5,67 US$
5 670,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
  • LD56050 Ultra-Low Dropout Linear Regulator
    LD56050 Ultra-Low Dropout Linear Regulator
    STMicro's LD56050 linear regulator includes thermal protection, maximum space-saving package, and is suitable for low power, battery-operated applications.
  • Automotive-Grade Rectifiers
    Automotive-Grade Rectifiers
    STMicroelectronics offers a large number of rectifiers that meet AEC-Q101 standards as well as strict international automotive quality requirements.
  • Compare STW70N60DM2
    Compare STW70N60DM2
    STW70N60DM2 vs STW70N60DM270N60DM2 vs STW70N60DM6
  • Electronic Fuses
    Electronic Fuses
    STMicroelectronics' E-Fuses are a hot-swap power management IC that can reduce maintenance costs and improve equipment uptime and availability.
  • Easy-to-Use Teseo-LIV3F GNSS Module
    Easy-to-Use Teseo-LIV3F GNSS Module
    STMicro's Teseo-LIV3F module is an easy-to-use global navigation satellite system (GNSS) standalone module.
  • SPC58 Automotive General Purpose MCU with Networki
    SPC58 Automotive General Purpose MCU with Networki
    STMicroelectronics' SPC58 automotive microcontrollers offer a unique scalability ideal for long-term platform development strategy of automotive customers.
More Newest Products
Top