CMLDM8005 TR

CMLDM8005 TR
Mfr. #:
CMLDM8005 TR
Fabricante:
Central Semiconductor
Descripción:
Darlington Transistors MOSFET SMD- Small Signal P-Channel Mosfet
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CMLDM8005 TR Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
CMLDM8005 TR más información
Atributo del producto
Valor de atributo
Fabricante
Central Semiconductor Corp
categoria de producto
FET: matrices
Serie
CMLDM8
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.000289 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOT-563, SOT-666
Tecnología
Si
Temperatura de funcionamiento
-65°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
SOT-563
Configuración
Doble
Tipo FET
2 P-Channel (Dual)
Potencia máxima
350mW
Tipo transistor
2 P-Channel
Drenaje-a-fuente-voltaje-Vdss
20V
Entrada-Capacitancia-Ciss-Vds
100pF @ 16V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
650mA
Rds-On-Max-Id-Vgs
360 mOhm @ 350mA, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Puerta-Carga-Qg-Vgs
1.2nC @ 4.5V
Disipación de potencia Pd
350 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 65 C
Vgs-Puerta-Fuente-Voltaje
8 V
Id-corriente-de-drenaje-continua
650 mA
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Vgs-th-Gate-Source-Threshold-Voltage
1 V
Resistencia a la fuente de desagüe de Rds
370 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
48 ns
Tiempo de retardo de encendido típico
38 ns
Qg-Gate-Charge
1.2 nC
Transconductancia directa-Mín.
0.2 S
Modo de canal
Mejora
Tags
CMLDM80, CMLDM8, CMLDM, CMLD, CML
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
P-Channel Enhancement Mode MOSFET Dual 20V 650mA 6-Pin SOT-563 T/R
***ure Electronics
CMLDM8005 Series 20 V 0.8 Ohm Dual P-Channel Enhancement-Mode Silicon Mosfet
***i-Key
MOSFET 2P-CH 20V 0.65A SOT563
Central Semiconductor P-Channel Enhancement Mode MOSFETs
Central Semiconductor P-channel enhancement mode MOSFETs offer low rDS(ON) and low threshold voltage. CMUDM8004 and CMUDM8005 ULTRAmini™ MOSFETs, CMLDM8005 PICOmini™, and CMNDM8001 FEMTOmini™ devices are designed for high-speed pulsed amplifier and driver applications. Central Semiconductor CMUDM8004 / CMUDM8005 and CMNDM8001 MOSFETs are manufactured by the P-channel DMOS process. CMLDM8005 features 350mW power dissipation.Learn More
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more
Parte # Mfg. Descripción Valores Precio
CMLDM8005 TR
DISTI # CMLDM8005CT-ND
Central Semiconductor CorpMOSFET 2P-CH 20V 0.65A SOT563
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2406In Stock
  • 1000:$0.3481
  • 500:$0.4351
  • 100:$0.5873
  • 10:$0.7610
  • 1:$0.8700
CMLDM8005 TR
DISTI # CMLDM8005DKR-ND
Central Semiconductor CorpMOSFET 2P-CH 20V 0.65A SOT563
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2406In Stock
  • 1000:$0.3481
  • 500:$0.4351
  • 100:$0.5873
  • 10:$0.7610
  • 1:$0.8700
CMLDM8005 TR
DISTI # CMLDM8005TR-ND
Central Semiconductor CorpMOSFET 2P-CH 20V 0.65A SOT563
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.3062
CMLDM8005 TR
DISTI # CMLDM8005 TR
Central Semiconductor CorpP-Channel Enhancement Mode MOSFET Dual 20V 650mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: CMLDM8005 TR)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.2519
  • 6000:$0.2409
  • 12000:$0.2349
  • 18000:$0.2249
  • 30000:$0.2189
CMLDM8005 TR
DISTI # 610-CMLDM8005
Central Semiconductor CorpMOSFET SMD- Small Signal P-Channel Mosfet
RoHS: Compliant
0
  • 1:$0.6900
  • 10:$0.5960
  • 100:$0.4130
  • 1000:$0.3080
  • 3000:$0.2600
  • 9000:$0.2500
  • 24000:$0.2400
Imagen Parte # Descripción
CMLDM8005 TR

Mfr.#: CMLDM8005 TR

OMO.#: OMO-CMLDM8005-TR

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OMO.#: OMO-CMLDM8120G-TR-PBFREE-1190

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Mfr.#: CMLDM8120GTR

OMO.#: OMO-CMLDM8120GTR-1190

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Mfr.#: CMLDM8120GTR-LF

OMO.#: OMO-CMLDM8120GTR-LF-1190

Nuevo y original
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Mfr.#: CMLDM8120TR

OMO.#: OMO-CMLDM8120TR-1190

Nuevo y original
CMLDM8005 TR

Mfr.#: CMLDM8005 TR

OMO.#: OMO-CMLDM8005-TR-CENTRAL-SEMICONDUCTOR

Darlington Transistors MOSFET SMD- Small Signal P-Channel Mosfet
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de CMLDM8005 TR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,33 US$
0,33 US$
10
0,31 US$
3,12 US$
100
0,30 US$
29,55 US$
500
0,28 US$
139,55 US$
1000
0,26 US$
262,70 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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