FQI8N60CTU

FQI8N60CTU
Mfr. #:
FQI8N60CTU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 600V N-Channel Adv Q-FET C-Series
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQI8N60CTU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
7.5 A
Rds On - Resistencia de la fuente de drenaje:
1.2 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
3.13 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
4.83 mm
Longitud:
10.67 mm
Serie:
FQI8N60C
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
9.65 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
8.7 S
Otoño:
64.5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
60.5 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
81 ns
Tiempo típico de retardo de encendido:
16.5 ns
Parte # Alias:
FQI8N60CTU_NL
Unidad de peso:
0.073511 oz
Tags
FQI8N6, FQI8N, FQI8, FQI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 600 V, 7.5 A, 1.2 Ω, I2PAK
***ark
MOSFET, N-CH, 600V, 7.5A, I2PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descripción Valores Precio
FQI8N60CTU
DISTI # 26637301
ON Semiconductor600V N-CHANNEL ADVANCE Q-FET C3000
  • 1000:$0.7599
FQI8N60CTU
DISTI # FQI8N60CTU-ND
ON SemiconductorMOSFET N-CH 600V 7.5A I2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube
964In Stock
  • 1000:$1.0411
  • 500:$1.2564
  • 100:$1.6154
  • 10:$2.0100
  • 1:$2.2300
FQI8N60CTU
DISTI # FQI8N60CTU
ON SemiconductorTrans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FQI8N60CTU)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.7789
  • 2000:$0.7739
  • 4000:$0.7639
  • 6000:$0.7539
  • 10000:$0.7349
FQI8N60CTU
DISTI # FQI8N60CTU
ON SemiconductorTrans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) I2PAK Rail (Alt: FQI8N60CTU)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.4949
  • 10:€1.1639
  • 25:€0.9649
  • 50:€0.8139
  • 100:€0.7959
  • 500:€0.7709
  • 1000:€0.7539
FQI8N60CTU
DISTI # 512-FQI8N60CTU
ON SemiconductorMOSFET 600V N-Channel Adv Q-FET C-Series
RoHS: Compliant
991
  • 1:$1.9300
  • 10:$1.6400
  • 100:$1.3100
  • 500:$1.1500
  • 1000:$0.9470
  • 2000:$0.8820
  • 5000:$0.8490
FQI8N60CTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
24817
  • 1000:$1.1500
  • 500:$1.2100
  • 100:$1.2600
  • 25:$1.3100
  • 1:$1.4100
Imagen Parte # Descripción
ADS131E08IPAGR

Mfr.#: ADS131E08IPAGR

OMO.#: OMO-ADS131E08IPAGR

Analog Front End - AFE Analog Front-End
1N4007G

Mfr.#: 1N4007G

OMO.#: OMO-1N4007G

Rectifiers 1000V 1A Standard
EKXL451ELL470MK30S

Mfr.#: EKXL451ELL470MK30S

OMO.#: OMO-EKXL451ELL470MK30S

Aluminum Electrolytic Capacitors - Radial Leaded 47uF 20% 450V Long Life
2200LL-391-H-RC

Mfr.#: 2200LL-391-H-RC

OMO.#: OMO-2200LL-391-H-RC

Fixed Inductors TOROID INDUCTR 390uH LOW LOSS HI CURRNT
ADS131E08IPAGR

Mfr.#: ADS131E08IPAGR

OMO.#: OMO-ADS131E08IPAGR-TEXAS-INSTRUMENTS

ADC / DAC Multichannel Analog Front-End
EEU-FS1H102L

Mfr.#: EEU-FS1H102L

OMO.#: OMO-EEU-FS1H102L-PANASONIC

CAP ALUM 1000UF 20% 50V T/H
1101001000045

Mfr.#: 1101001000045

OMO.#: OMO-1101001000045-1190

Processor Accessories Raspberry Pi 3 (RPi3) Power Supply
1N4007G

Mfr.#: 1N4007G

OMO.#: OMO-1N4007G-ON-SEMICONDUCTOR

DIODE GEN PURP 1KV 1A DO41
2200LL-391-H-RC

Mfr.#: 2200LL-391-H-RC

OMO.#: OMO-2200LL-391-H-RC-BOURNS

Fixed Inductors TOROID INDUCTR 390uH LOW LOSS HI CURRNT
Disponibilidad
Valores:
989
En orden:
2972
Ingrese la cantidad:
El precio actual de FQI8N60CTU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,73 US$
1,73 US$
10
1,47 US$
14,70 US$
100
1,17 US$
117,00 US$
500
1,03 US$
515,00 US$
1000
0,85 US$
854,00 US$
2000
0,80 US$
1 590,00 US$
5000
0,77 US$
3 830,00 US$
10000
0,74 US$
7 360,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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