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IRF3711SPBF

IRF3711SPBF
Mfr. #:
IRF3711SPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 20V 1 N-CH HEXFET 6mOhms 29nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF3711SPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3711SPBF DatasheetIRF3711SPBF Datasheet (P4-P6)IRF3711SPBF Datasheet (P7-P9)IRF3711SPBF Datasheet (P10-P12)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
110 A
Rds On - Resistencia de la fuente de drenaje:
8.5 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
29 nC
Pd - Disipación de energía:
120 W
Configuración:
Único
Embalaje:
Tubo
Altura:
2.3 mm
Longitud:
6.5 mm
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Parte # Alias:
SP001576712
Unidad de peso:
0.139332 oz
Tags
IRF3711S, IRF3711, IRF371, IRF37, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 20V 110A 3-Pin(2+Tab) D2PAK
***ernational Rectifier
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
***ied Electronics & Automation
MOSFET, 20V, 110A, 6 MOHM, 29 NC QG, D2-PAK
***ment14 APAC
MOSFET, N, 20V, 110A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:20V; On Resistance Rds(on):6mohm; Threshold Voltage Vgs Typ:3V; Transistor Case Style:D2-PAK; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Junction to Case Thermal Resistance A:1.04°C/W; On State resistance @ Vgs = 10V:6mohm; Package / Case:D2-PAK; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:440A; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Parte # Mfg. Descripción Valores Precio
IRF3711SPBF
DISTI # IRF3711SPBF-ND		Infineon Technologies AGMOSFET N-CH 20V 110A D2PAK
RoHS: Compliant
Min Qty: 3200
Container: Tube		Limited Supply - Call
    IRF3711SPBF
    DISTI # 70018211    		Infineon Technologies AGMOSFET,20V,110A,6 MOHM,29 NC QG,D2-PAK
    RoHS: Compliant    		0
    • 3200:$2.7100
    • 6400:$2.6560
    • 16000:$2.5750
    • 32000:$2.4660
    • 80000:$2.3040
    IRF3711SPBFInternational Rectifier 735
      IRF3711SPBFInternational Rectifier 
      RoHS: Compliant      		1333
        IRF3711SPBF
        DISTI # 8657637        		Infineon Technologies AG 
        RoHS: Compliant        		0
        • 1000:$1.8200
        • 500:$1.9600
        • 250:$2.2100
        • 100:$2.4700
        • 10:$3.0600
        • 1:$3.7100
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        Disponibilidad
        Valores:
        Available
        En orden:
        1000
        Ingrese la cantidad:
        El precio actual de IRF3711SPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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