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IRF5N3205SCV

IRF5N3205SCV
Mfr. #:
IRF5N3205SCV
Fabricante:
Infineon Technologies AG
Descripción:
Trans MOSFET N-CH 55V 55A 3-Pin SMD-1 TXV Level Screening - Bulk (Alt: IRF5N3205SCV)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF5N3205SCV Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IRF5N3, IRF5N, IRF5, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
***et
Trans MOSFET N-CH 55V 55A 3-Pin SMD-1 TXV Level Screening
***ineon SCT
55V Single N-Channel Hi-Rel MOSFET in a SMD-1 package, SMD-1-3
***ure Electronics
Single N-Channel 100 V 23 mOhm 130nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 100V 57A 3-Pin(2+Tab) D2PAK Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 38 W
***eco
IRF3710STRRPBF,MOSFET, 100V, 5 7A, 23 MOHM, 86.7 NC QG, D2-P
*** Stop Electro
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:57A; On Resistance Rds(On):0.023Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: Yes
***ure Electronics
Single N-Channel 100 V 13.9 mOhm 54 nC HEXFET® Power Mosfet - TO-252-3
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Lighting LED
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 143 W
***roFlash
Power Field-Effect Transistor, 56A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 100V, 63A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0111ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 143W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
***ure Electronics
Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ow.cn
Trans MOSFET N-CH Si 100V 59A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 160 W
***(Formerly Allied Electronics)
MOSFET, 100V, 59A, 18 mOhm, 82 nC Qg, D2-Pak
***Yang
Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (A
***roFlash
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Channel Type:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:160W; No. Of Pins:3Pins Rohs Compliant: Yes
***ark
MOSFET, 30V, 60A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 60A; 1mohm @ 10V; PowerPAK SO-8
***ure Electronics
Single N-Channel 30 V 4 mOhm SMT TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8
***nell
MOSFET, N-CH, 30V, 100A, 150DEG C, 104W; Transistor Polarity: N Channel; Drain Source Voltage Vds: 30V; Continuous Drain Current Id: 100A; On Resistance Rds(on): 830µohm; Transistor Mounting: Surface Mount; Rds(on) Test Voltage Vgs: 10V
***(Formerly Allied Electronics)
SUM65N20-30-E3 N-channel MOSFET Transistor; 65 A; 200 V; 2+Tab-Pin TO-263
***ure Electronics
SUM65N20 Series 200 V 65 A 30 mOhm Surface Mount N-Channel Mosfet - D2PAK-3
*** Source Electronics
Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 200V 65A D2PAK
***nsix Microsemi
Power Field-Effect Transistor, 65A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
N CHANNEL MOSFET, 200V, 65A, TO-263; Tra; N CHANNEL MOSFET, 200V, 65A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
***nell
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:65A; Resistance, Rds On:0.03ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:140A; Max Repetitive Avalanche Energy:61mJ; Power Dissipation:375W; Power Dissipation on 1 Sq. PCB:3.75W; Power, Pd:375W; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Time, trr Typ:130ns; Typ Capacitance Ciss:5100pF; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
***et Europe
Transistor MOSFET N-CH 100V 60A 8-Pin PowerPAK SO T/R
***ure Electronics
Single N-Channel 100V 0.0087 Ohm Medium Voltage ThunderFET® Mosfet PowerPAK-SO-8
***nell
MOSFET, N-CH, 100V, 60A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
Parte # Mfg. Descripción Valores Precio
IRF5N3205SCV
DISTI # IRF5N3205SCV		Infineon Technologies AGTrans MOSFET N-CH 55V 55A 3-Pin SMD-1 TXV Level Screening - Bulk (Alt: IRF5N3205SCV)
RoHS: Not Compliant
Min Qty: 50
Container: Bulk		Americas - 0
  • 50:$141.3900
  • 52:$136.2900
  • 102:$125.0900
  • 250:$111.2900
  • 500:$109.3900
Imagen Parte # Descripción
IRF5N3415SCV

Mfr.#: IRF5N3415SCV

OMO.#: OMO-IRF5N3415SCV-1190

 Trans MOSFET N-CH Si 150V 37.5A 3-Pin SMD-1
IRF5N3205SCV

Mfr.#: IRF5N3205SCV

OMO.#: OMO-IRF5N3205SCV-1190

 Trans MOSFET N-CH 55V 55A 3-Pin SMD-1 TXV Level Screening - Bulk (Alt: IRF5N3205SCV)
IRF5N3315

Mfr.#: IRF5N3315

OMO.#: OMO-IRF5N3315-1190

 Nuevo y original
IRF5N3415

Mfr.#: IRF5N3415

OMO.#: OMO-IRF5N3415-1190

 Trans MOSFET N-CH 150V 37.5A 3-Pin SMD-1 - Bulk (Alt: IRF5N3415)
IRF5N3710

Mfr.#: IRF5N3710

OMO.#: OMO-IRF5N3710-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de IRF5N3205SCV es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
164,08 US$
164,08 US$
10
155,88 US$
1 558,81 US$
100
147,68 US$
14 767,65 US$
500
139,47 US$
69 736,15 US$
1000
131,27 US$
131 268,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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