STGB19NC60KDT4

STGB19NC60KDT4
Mfr. #:
STGB19NC60KDT4
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors 20 A - 600 V - short circuit rugged IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGB19NC60KDT4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGB19NC60KDT4 más información STGB19NC60KDT4 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
D2PAK-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje máximo del emisor de puerta:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
STGB19NC60KDT4
Embalaje:
Carrete
Corriente continua de colector Ic Max:
35 A
Altura:
4.6 mm
Longitud:
10.4 mm
Ancho:
9.35 mm
Marca:
STMicroelectronics
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Unidad de peso:
0.079014 oz
Tags
STGB19NC60KD, STGB19NC60K, STGB19NC, STGB19, STGB1, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 35A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
STGB19NC60KD Series Switching Performance Surface Mount IGBT - TO-263-3
***r Electronics
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***et
Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***ark
TAPE REEL/N-ch / 20A 600V IGBT
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
14 A, 600 V short-circuit rugged IGBT
*** Source Electronics
IGBT 600V 25A 80W D2PAK / N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
***icroelectronics SCT
Short-circuit rugged IGBT, D2PAK, Tape and Reel
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***(Formerly Allied Electronics)
IGBT, N-CHANNEL 600V 25A, D2PAK
***ser
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***nell
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins;
*** Source Electronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R / IGBT 600V 25A 80W D2PAK
***ure Electronics
STGB7NC60H Series 600 V 14 A N-Channel Power Mesh IGBT - D2PAK
***icroelectronics
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
***ark
Igbt, Smd, 600V, 14A, D2-Pak; Dc Collector Current:25A; Collector Emitter Saturation Voltage Vce(On):2.5V; Power Dissipation Pd:80W; Collector Emitter Voltage V(Br)Ceo:-; Transistor Case Style:to-263; No. Of Pins:3Pins; Operating Rohs Compliant: Yes
***Yang
Trans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail - Tape and Reel
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.
***nell
IGBT, SINGLE, 600V, 10A, TO-263AB; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 73.5W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans IGBT Chip N=-CH 600V 14A 83000mW 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***emi
IGBT, 600V, 7A, Short Circuit Rated
***el Electronic
IGBT Transistors 600V 7A NPT IGBT
***ark
Nptpigbt To263 7A 600V/Reel |Onsemi FGB7N60UNDF
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential.
*** Source Electronics
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(2+Tab) D2PAK T/R / IGBT 600V 20A 65W D2PAK
***Parts
IGBTs - Single, Transistors N-Channel, D2PAK 20A 600V 65W Surface Mount
***ment14 APAC
IGBT, SMD, 600V, 10A, D2-PAK; DC Collector Current:10A; Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:60W;
***nell
IGBT, SMD, 600V, 10A, D2-PAK; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 20A; Fall Time tf: 82ns; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 60W; Pulsed Current Icm: 30A; Rise Time: 6ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
Parte # Mfg. Descripción Valores Precio
STGB19NC60KDT4
DISTI # 497-7007-1-ND
STMicroelectronicsIGBT 600V 35A 125W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    STGB19NC60KDT4
    DISTI # 497-7007-6-ND
    STMicroelectronicsIGBT 600V 35A 125W D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      STGB19NC60KDT4
      DISTI # 497-7007-2-ND
      STMicroelectronicsIGBT 600V 35A 125W D2PAK
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 1000:$2.7019
      STGB19NC60KDT4
      DISTI # STGB19NC60KDT4
      STMicroelectronicsTrans IGBT Chip N-CH 600V 35A 3-Pin(2+Tab) D2PAK T/R (Alt: STGB19NC60KDT4)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel
      Asia - 0
        STGB19NC60KDT4
        DISTI # STGB19NC60KDT4
        STMicroelectronicsTrans IGBT Chip N-CH 600V 35A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STGB19NC60KDT4)
        RoHS: Compliant
        Min Qty: 1000
        Container: Reel
        Americas - 0
        • 1000:$2.6900
        • 2000:$2.5900
        • 4000:$2.4900
        • 6000:$2.2900
        • 10000:$2.2900
        STGB19NC60KDT4
        DISTI # 511-STGB19NC60KDT4
        STMicroelectronicsIGBT Transistors 20 A - 600 V - short circuit rugged IGBT
        RoHS: Compliant
        872
        • 1:$4.8700
        • 10:$4.1400
        • 100:$3.5900
        • 250:$3.4100
        • 500:$3.0600
        • 1000:$2.5800
        • 2000:$2.4500
        Imagen Parte # Descripción
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        OMO.#: OMO-IRS2092STRPBF

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        Mfr.#: IR2110PBF

        OMO.#: OMO-IR2110PBF

        Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
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        Mfr.#: IRS27952STRPBF

        OMO.#: OMO-IRS27952STRPBF

        Gate Drivers Resonant 1/2 Brdg Cntrl IC
        YFF31AH2A105MT0Y0N

        Mfr.#: YFF31AH2A105MT0Y0N

        OMO.#: OMO-YFF31AH2A105MT0Y0N

        Feed Through Capacitors 1206 100V 1.0uF 20% X7S AEC-Q200
        CRCW080510K0FKEBC

        Mfr.#: CRCW080510K0FKEBC

        OMO.#: OMO-CRCW080510K0FKEBC

        Thick Film Resistors - SMD 1/8Watt 10Kohms 1% Commercial Use
        IR2110PBF

        Mfr.#: IR2110PBF

        OMO.#: OMO-IR2110PBF-INFINEON-TECHNOLOGIES

        Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
        IRS27952STRPBF

        Mfr.#: IRS27952STRPBF

        OMO.#: OMO-IRS27952STRPBF-INFINEON-TECHNOLOGIES

        Gate Drivers Resonant 1/2 Brdg Cntrl IC
        CRCW12066R81FKEA

        Mfr.#: CRCW12066R81FKEA

        OMO.#: OMO-CRCW12066R81FKEA-VISHAY-DALE

        Thick Film Resistors - SMD 1/4watt 6.81ohms 1%
        ATATMEL-ICE

        Mfr.#: ATATMEL-ICE

        OMO.#: OMO-ATATMEL-ICE-MICROCHIP-TECHNOLOGY

        EMU FOR SAM AND AVR MCU KIT
        CRCW080510K0FKEBC

        Mfr.#: CRCW080510K0FKEBC

        OMO.#: OMO-CRCW080510K0FKEBC-VISHAY-DALE

        D12/CRCW0805-C 100 10K 1% ET5
        Disponibilidad
        Valores:
        514
        En orden:
        2497
        Ingrese la cantidad:
        El precio actual de STGB19NC60KDT4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        4,87 US$
        4,87 US$
        10
        4,14 US$
        41,40 US$
        100
        3,59 US$
        359,00 US$
        250
        3,41 US$
        852,50 US$
        500
        3,06 US$
        1 530,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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