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MRF6V12500HR5

MRF6V12500HR5
Mfr. #:
MRF6V12500HR5
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors VHV6 500W 50V NI780H
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MRF6V12500HR5 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
MRF6V12500HR5 más información
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
Si
Vds - Voltaje de ruptura de drenaje-fuente:
110 V
Ganar:
18.5 dB
Potencia de salida:
50 W
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
NI-780
Embalaje:
Carrete
Configuración:
Único
Frecuencia de operación:
0.96 GHz to 1.215 GHz
Serie:
MRF6V12500H
Marca:
NXP / Freescale
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
10 V
Vgs th - Voltaje umbral puerta-fuente:
2.4 V
Parte # Alias:
935310167178
Unidad de peso:
0.226635 oz
Tags
MRF6V12500HR, MRF6V12500H, MRF6V125, MRF6V12, MRF6V1, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    R***U
    R***U
    RO

    all is ok

    2019-01-24
    K***n
    K***n
    IL

    good

    2019-04-28
    A***V
    A***V
    RU

    Works

    2019-04-19
    G***s
    G***s
    CY

    Thank you.

    2019-07-10
***W
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*** Semiconductors SCT
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RF MOSFET Transistors VHV6 500W 50V NI780H
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L BAND Si N-CHANNEL RF POWER MOSFET
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Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V
***W
RF Power Transistor,470 to 860 MHz, 450 W, Typ Gain in dB is 22.5 @ 860 MHz, 50 V, LDMOS, SOT1787
***nsix Microsemi
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ark
RF MOSFET, N CHANNEL, 110V, 375D-05; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:375D; Gain:20.5dB; Gate-Source Voltage:10V; Operating Frequency Max:860MHz; Output Power, Pout:90W
***nell
RF FET, 110V, 860MHZ-470MHZ, CASE 375D; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 860MHz; Operating Frequency Max: 470MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6VP3450H Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***ark
Lateral N-Channel Broadband Rf Power Mosfet, 1.8-150 Mhz, 1000 W, 50 V Rohs Compliant: Yes
***W
RF Power Transistor,1.8 to 150 MHz, 1000 W, Typ Gain in dB is 26 @ 130 MHz, 50 V, LDMOS, SOT1787
***nell
RF FET, N-CH, 110V, 1.8-150MHZ, NI-1230; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 150MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***W
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
***nell
TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
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Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***hard Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***SIT Distribution GmbH
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***nsix Microsemi
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No
MRF6V12500 Pulse Lateral N-Ch RF Power MOSFET
NXP's MRF6V12500 Pulse Lateral N-Channel RF Power MOSFET is designed for applications operating at frequencies between 960 and 1215 MHz. Features include devices that are internally matched for ease of use, qualified up to a maximum of 50 VDD operation, integrated ESD protection, and they have greater negative gate-source voltage range for improved Class C operation. This device is suitable for use in pulse applications.Learn More
Parte # Mfg. Descripción Valores Precio
MRF6V12500HR5
DISTI # 26099271		NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin NI-780 T/R919
  • 1:$541.9000
MRF6V12500HR5
DISTI # 568-15012-2-ND		NXP SemiconductorsFET RF 110V 1.03GHZ NI-780H
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		50In Stock
  • 50:$367.0056
MRF6V12500HR5
DISTI # 568-15012-1-ND		NXP SemiconductorsFET RF 110V 1.03GHZ NI-780H
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		50In Stock
  • 1:$378.0200
MRF6V12500HR5
DISTI # 568-15012-6-ND		NXP SemiconductorsFET RF 110V 1.03GHZ NI-780H
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		50In Stock
  • 1:$378.0200
MRF6V12500HR5
DISTI # MRF6V12500HR5		Avnet, Inc.Trans MOSFET N-CH 110V 2-Pin NI-780H T/R - Tape and Reel (Alt: MRF6V12500HR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$402.1900
  • 100:$386.3900
  • 200:$371.2900
  • 300:$357.8900
  • 500:$350.9900
MRF6V12500HR5
DISTI # 841-MRF6V12500HR5		NXP SemiconductorsRF MOSFET Transistors VHV6 500W 50V NI780H
RoHS: Compliant		0
  • 1:$378.0100
  • 5:$372.2000
  • 10:$366.6600
  • 25:$358.7500
  • 50:$353.2400
MRF6V12500HR5
DISTI # MRF6V12500HR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		922
  • 1:$370.3400
  • 10:$360.8500
  • 25:$351.8300
MRF6V12500HR5
DISTI # C1S233100302211		NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin NI-780 T/R
RoHS: Compliant		919
  • 10:$518.0000
  • 5:$530.0000
  • 1:$615.0000
Imagen Parte # Descripción
MRF6V14300HSR5

Mfr.#: MRF6V14300HSR5

OMO.#: OMO-MRF6V14300HSR5

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V13250HSR5

Mfr.#: MRF6V13250HSR5

OMO.#: OMO-MRF6V13250HSR5

 RF MOSFET Transistors VHV6 250W 50V NI780HS
MRF6V12250HSR5

Mfr.#: MRF6V12250HSR5

OMO.#: OMO-MRF6V12250HSR5

 RF MOSFET Transistors VHV6 250W 50V NI780HS
MRF6V12500GSR5

Mfr.#: MRF6V12500GSR5

OMO.#: OMO-MRF6V12500GSR5

 RF MOSFET Transistors Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
MRF6V14300HR3

Mfr.#: MRF6V14300HR3

OMO.#: OMO-MRF6V14300HR3

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V12250HSR3

Mfr.#: MRF6V12250HSR3

OMO.#: OMO-MRF6V12250HSR3-NXP-SEMICONDUCTORS

 FET RF 100V 1.03GHZ NI-780S
MRF6V13250H

Mfr.#: MRF6V13250H

OMO.#: OMO-MRF6V13250H-1190

 Nuevo y original
MRF6V14300MSR5

Mfr.#: MRF6V14300MSR5

OMO.#: OMO-MRF6V14300MSR5-1190

 Nuevo y original
MRF6V12250HR5

Mfr.#: MRF6V12250HR5

OMO.#: OMO-MRF6V12250HR5-NXP-SEMICONDUCTORS

 FET RF 100V 1.03GHZ NI-780
MRF6V13250HSR5

Mfr.#: MRF6V13250HSR5

OMO.#: OMO-MRF6V13250HSR5-NXP-SEMICONDUCTORS

 FET RF 120V 1.3GHZ NI780S
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de MRF6V12500HR5 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
378,01 US$
378,01 US$
5
372,20 US$
1 861,00 US$
10
366,66 US$
3 666,60 US$
25
358,75 US$
8 968,75 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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