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MRF6V14300HSR5

MRF6V14300HSR5
Mfr. #:
MRF6V14300HSR5
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors VHV6 1400MHZ 50V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MRF6V14300HSR5 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
Si
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Ganar:
18 dB
Potencia de salida:
39.6 W
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
NI-780S
Embalaje:
Carrete
Configuración:
Único
Frecuencia de operación:
1.2 GHz to 1.4 GHz
Serie:
MRF6V14300H
Escribe:
RF Power MOSFET
Marca:
NXP / Freescale
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
10 V
Vgs th - Voltaje umbral puerta-fuente:
2.4 V
Parte # Alias:
935313405178
Unidad de peso:
0.115448 oz
Tags
MRF6V14300HS, MRF6V14300H, MRF6V14, MRF6V1, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V
***W
RF Power Transistor,1200 to 1400 MHz, 330 W, Typ Gain in dB is 18 @ 1400 MHz, 50 V, LDMOS, SOT1793
*** Electronic Components
RF MOSFET Transistors VHV6 1400MHZ 50V
***or
RF POWER FIELD-EFFECT TRANSISTOR
***ark
VHV6 1400MHZ 300W 50V NI780S ROHS COMPLIANT: YES
***ical
Trans RF FET N-CH 3-Pin NI-780S T/R
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***hard Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***ical
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N-CH, 100V, 4.3A, TO-252AA
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No
***W
RF Power Transistor,960 to 1400 MHz, 10 W, Typ Gain in dB is 25 @ 1090 MHz, 50 V, LDMOS, SOT1811
*** Semiconductors SCT
Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V, PLD4L
***et
Transistor RF FET N-CH 100V 960MHz to 1400MHz 3-Pin PLD-1.5 T/R
*** Electronic Components
RF MOSFET Transistors VHV6 10W PULSE PLD1.5
***nell
RF FET, 100V, 960MHZ-1.4GHZ, PLD-1.5; Drain Source Voltage Vds: 100V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 960MHz; Operating Frequency Max: 1.4GHz; RF Transistor Case: PLD-1.5; No. of Pins: -; Operating Temperature Max: 200°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***et
Trans MOSFET N-CH 100V 41A 3-Pin(2+Tab) D2PAK T/R
***el Electronic
ON SEMICONDUCTOR MAX809TTRG Microprocessor Support, Active-Low, Push-Pull Reset, 1V-5.5Vin, SOT-23-3
***ponent Stockers USA
41 A 100 V 0.039 ohm N-CHANNEL Si POWER MOSFET
***peria
N-channel TrenchMOS logic level FET
***ical
Trans RF MOSFET N-CH 100V 42A 5-Pin CDFM Bulk
***i-Key
TRANS LDMOS SOT1121B
Parte # Mfg. Descripción Valores Precio
MRF6V14300HSR5
DISTI # 25967739		NXP SemiconductorsTrans RF MOSFET N-CH 3-Pin NI-780S T/R21
  • 1:$602.3100
MRF6V14300HSR5
DISTI # MRF6V14300HSR5-ND		NXP SemiconductorsFET RF 100V 1.4GHZ NI780S
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 50:$321.3930
MRF6V14300HSR5
DISTI # MRF6V14300HSR5		Avnet, Inc.Trans MOSFET N-CH 100V 3-Pin NI-780S T/R - Tape and Reel (Alt: MRF6V14300HSR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$320.1900
  • 100:$307.5900
  • 200:$295.5900
  • 300:$284.8900
  • 500:$279.3900
MRF6V14300HSR5Freescale SemiconductorRF Power Field-Effect Transistor
RoHS: Compliant		393
  • 1000:$289.0500
  • 500:$304.2700
  • 100:$316.7700
  • 25:$330.3500
  • 1:$355.7600
MRF6V14300HSR5
DISTI # 841-MRF6V14300HSR5		NXP SemiconductorsRF MOSFET Transistors VHV6 1400MHZ 50V
RoHS: Compliant		0
  • 1:$300.9400
  • 5:$296.3100
  • 10:$291.9000
  • 25:$285.6000
  • 50:$281.2100
MRF6V14300HSR5
DISTI # MRF6V14300HSR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 50:$280.0900
Imagen Parte # Descripción
MRF6V14300HSR5

Mfr.#: MRF6V14300HSR5

OMO.#: OMO-MRF6V14300HSR5

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V14300HR5

Mfr.#: MRF6V14300HR5

OMO.#: OMO-MRF6V14300HR5

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V14300HR3

Mfr.#: MRF6V14300HR3

OMO.#: OMO-MRF6V14300HR3

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V14300HR3

Mfr.#: MRF6V14300HR3

OMO.#: OMO-MRF6V14300HR3-NXP-SEMICONDUCTORS

 FET RF 100V 1.4GHZ NI780
MRF6V14300HS

Mfr.#: MRF6V14300HS

OMO.#: OMO-MRF6V14300HS-1152

 FET RF 100V 1.4GHZ NI780S
MRF6V14300HSR3

Mfr.#: MRF6V14300HSR3

OMO.#: OMO-MRF6V14300HSR3-NXP-SEMICONDUCTORS

 FET RF 100V 1.4GHZ NI780S
MRF6V14300MSR5

Mfr.#: MRF6V14300MSR5

OMO.#: OMO-MRF6V14300MSR5-1190

 Nuevo y original
MRF6V14300HSR5

Mfr.#: MRF6V14300HSR5

OMO.#: OMO-MRF6V14300HSR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V14300HR5

Mfr.#: MRF6V14300HR5

OMO.#: OMO-MRF6V14300HR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 1400MHZ 50V
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de MRF6V14300HSR5 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
300,94 US$
300,94 US$
5
296,31 US$
1 481,55 US$
10
291,90 US$
2 919,00 US$
25
285,60 US$
7 140,00 US$
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