FF6MR12W2M1B11BOMA1

FF6MR12W2M1B11BOMA1
Mfr. #:
FF6MR12W2M1B11BOMA1
Fabricante:
Infineon Technologies
Descripción:
Discrete Semiconductor Modules EasyDUAL 2B 1200 V, 6 mO halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology.
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FF6MR12W2M1B11BOMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FF6MR12W2M1B11BOMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos de semiconductores discretos
RoHS:
Y
Producto:
Módulos MOSFET de potencia
Escribe:
Módulo EasyDUAL
Vf - Voltaje directo:
4.6 V
Vgs - Voltaje puerta-fuente:
- 10 V, 20 V
Estilo de montaje:
Montaje con tornillo
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Bandeja
Configuración:
Doble
Marca:
Infineon Technologies
Polaridad del transistor:
Canal N
Otoño:
30 ns
Id - Corriente de drenaje continua:
200 A
Tipo de producto:
Módulos de semiconductores discretos
Rds On - Resistencia de la fuente de drenaje:
5.63 mOhms
Hora de levantarse:
18.7 ns
Cantidad de paquete de fábrica:
15
Subcategoría:
Módulos de semiconductores discretos
Nombre comercial:
EasyDUAL; CoolSiC
Tiempo de retardo de apagado típico:
62.6 ns
Tiempo típico de retardo de encendido:
20.4 ns
Vds - Voltaje de ruptura de drenaje-fuente:
1200 V
Vgs th - Voltaje umbral puerta-fuente:
3.45 V
Parte # Alias:
FF6MR12W2M1_B11 SP001716496
Tags
FF6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
Parte # Mfg. Descripción Valores Precio
FF6MR12W2M1B11BOMA1
DISTI # V99:2348_22937625
Infineon Technologies AGFF6MR12W2M1B11BOMA10
  • 15000:$279.4500
  • 7500:$279.4600
  • 1500:$285.2800
  • 150:$301.4400
  • 15:$304.5600
FF6MR12W2M1B11BOMA1
DISTI # FF6MR12W2M1B11BOMA1-ND
Infineon Technologies AGMOSFET MODULE 1200V 200A
RoHS: Compliant
Min Qty: 1
Container: Tray
15In Stock
  • 15:$291.6927
  • 1:$304.5600
FF6MR12W2M1B11BOMA1
DISTI # SP001716496
Infineon Technologies AGMOSFET Module MOSFET 200A 3000Vrms Tray (Alt: SP001716496)
RoHS: Compliant
Min Qty: 1
Container: Tray
Europe - 135
  • 1000:€256.6900
  • 500:€260.3900
  • 100:€263.3900
  • 50:€267.9900
  • 25:€282.1900
  • 10:€285.1900
  • 1:€293.9900
FF6MR12W2M1B11BOMA1
DISTI # FF6MR12W2M1B11BOMA1
Infineon Technologies AGMOSFET Module MOSFET 200A 3000Vrms Tray - Trays (Alt: FF6MR12W2M1B11BOMA1)
RoHS: Compliant
Min Qty: 15
Container: Tray
Americas - 0
  • 150:$258.3900
  • 90:$264.6900
  • 60:$271.3900
  • 30:$278.4900
  • 15:$282.1900
FF6MR12W2M1B11BOMA1
DISTI # 726-FF6MR12W2M1B11BO
Infineon Technologies AGDiscrete Semiconductor Modules EasyDUAL 2B 1200 V, 6 mO halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology.
RoHS: Compliant
31
  • 1:$310.9800
  • 5:$303.5000
  • 10:$295.9600
  • 25:$291.8100
FF6MR12W2M1B11BOMA1
DISTI # XSKDRABV0046268
Infineon Technologies AG 
RoHS: Compliant
175 in Stock0 on Order
  • 175:$383.5800
  • 15:$410.9800
Imagen Parte # Descripción
SMBJ24A

Mfr.#: SMBJ24A

OMO.#: OMO-SMBJ24A

TVS Diodes / ESD Suppressors 600W 24V 5% Uni-Directional
C3M0016120K

Mfr.#: C3M0016120K

OMO.#: OMO-C3M0016120K

MOSFET SiC MOSFET G3 1200V 16mOhms
TPS79901DDCR

Mfr.#: TPS79901DDCR

OMO.#: OMO-TPS79901DDCR

LDO Voltage Regulators 200mA High PSRR LDO
B32673P6225K000

Mfr.#: B32673P6225K000

OMO.#: OMO-B32673P6225K000

Film Capacitors FILM CAP PFC 2.2uF 1 0% 630Vdc LS 22.5mm
CGA5H3C0G2E103J115AE

Mfr.#: CGA5H3C0G2E103J115AE

OMO.#: OMO-CGA5H3C0G2E103J115AE

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 250V 10nF 5% SOFT C0G AEC-Q200
SMBJ24A

Mfr.#: SMBJ24A

OMO.#: OMO-SMBJ24A-LITTELFUSE

TVS Diodes - Transient Voltage Suppressors 24V 600W SMB Unidirectional
QTH-060-03-L-D-A

Mfr.#: QTH-060-03-L-D-A

OMO.#: OMO-QTH-060-03-L-D-A-SAMTEC

CONN HEADER HS .5MM 120POS DL AU
CPF0402B10RE1

Mfr.#: CPF0402B10RE1

OMO.#: OMO-CPF0402B10RE1-TE-CONNECTIVITY-AMP

Thin Film Resistors - SMD CPF 0402 10R 0.1% 25PPM 1K RL
TPS79901DDCR

Mfr.#: TPS79901DDCR

OMO.#: OMO-TPS79901DDCR-TEXAS-INSTRUMENTS

LDO Voltage Regulators 200mA High PSRR LDO
ABM3C-14.7456MHZ-D4Y-T

Mfr.#: ABM3C-14.7456MHZ-D4Y-T

OMO.#: OMO-ABM3C-14-7456MHZ-D4Y-T-ABRACON

Crystals 14.7456MHz 30ppm 18pF -40C +85C
Disponibilidad
Valores:
Available
En orden:
1993
Ingrese la cantidad:
El precio actual de FF6MR12W2M1B11BOMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
310,98 US$
310,98 US$
5
303,50 US$
1 517,50 US$
10
295,96 US$
2 959,60 US$
25
291,81 US$
7 295,25 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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