C3M0016120K

C3M0016120K
Mfr. #:
C3M0016120K
Fabricante:
CInc COM
Descripción:
MOSFET SiC MOSFET G3 1200V 16mOhms
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
C3M0016120K Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
C3M0016120K más información
Atributo del producto
Valor de atributo
Fabricante:
Cree, Inc.
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1.2 kV
Id - Corriente de drenaje continua:
115 A
Rds On - Resistencia de la fuente de drenaje:
28.8 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.8 V
Vgs - Voltaje puerta-fuente:
15 V
Qg - Carga de puerta:
211 nC
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
556 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Tipo de transistor:
1 N-Channel
Marca:
Cree, Inc.
Otoño:
13 ns
Tipo de producto:
MOSFET
Hora de levantarse:
33 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
65 ns
Tiempo típico de retardo de encendido:
34 ns
Tags
C3M00, C3M0, C3M
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
C3M0016120K Silicon Carbide Power MOSFET
Wolfspeed C3M0016120K Silicon Carbide Power MOSFET facilitates C3M™ MOSFET Technology in an optimized package. The C3M0016120K features high blocking voltage with low on-resistance, as well as high-speed switching with low capacitances. The device offers excellent benefits including a reduction in cooling requirements, switching losses, and gate ringing. Additionally, the C3M0016120K provides an increase in power density and system switching frequency.
Imagen Parte # Descripción
CAS325M12HM2

Mfr.#: CAS325M12HM2

OMO.#: OMO-CAS325M12HM2

Discrete Semiconductor Modules Half-Bridge Module 1.2kV, 325A Hi-Perf
C4D40120D

Mfr.#: C4D40120D

OMO.#: OMO-C4D40120D

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2x20A
C3M0075120K

Mfr.#: C3M0075120K

OMO.#: OMO-C3M0075120K

MOSFET SIC MOSFET 1200V 75 mOhm
CGD15HB62LP

Mfr.#: CGD15HB62LP

OMO.#: OMO-CGD15HB62LP

Power Management IC Development Tools Companion GateDriver for 941-CAS325M12HM2
RC1206FR-07100RL

Mfr.#: RC1206FR-07100RL

OMO.#: OMO-RC1206FR-07100RL

Thick Film Resistors - SMD 100 OHM 1%
CGD15HB62LP

Mfr.#: CGD15HB62LP

OMO.#: OMO-CGD15HB62LP-WOLFSPEED

GATE DRVR 150C FOR 1.2KV 325A HI
C3M0075120K

Mfr.#: C3M0075120K

OMO.#: OMO-C3M0075120K-WOLFSPEED

MOSFET N-CH 1200V 30A TO247-4
CC1206KRX7R9BB104

Mfr.#: CC1206KRX7R9BB104

OMO.#: OMO-CC1206KRX7R9BB104-YAGEO

Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 50V X7R 10%
C4D40120D

Mfr.#: C4D40120D

OMO.#: OMO-C4D40120D-WOLFSPEED

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2x20A
RC1206FR-07100RL

Mfr.#: RC1206FR-07100RL

OMO.#: OMO-RC1206FR-07100RL-YAGEO

Thick Film Resistors - SMD 100 OHM 1%
Disponibilidad
Valores:
375
En orden:
2358
Ingrese la cantidad:
El precio actual de C3M0016120K es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
70,59 US$
70,59 US$
100
67,87 US$
6 787,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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