T2G6001528-Q3

T2G6001528-Q3
Mfr. #:
T2G6001528-Q3
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
T2G6001528-Q3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
T2G6001528-Q3 más información
Atributo del producto
Valor de atributo
Fabricante
TriQuint (Qorvo)
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
T2G
embalaje
Bandeja
Alias ​​de parte
1100001
Tecnología
GaN SiC
Tipo transistor
HEMT
Tags
T2G6001528-Q, T2G6001, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC- 6 GHz, 18 W, 9 dB, 28 V, GaN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
T2G6001528-Q3
DISTI # T2G6001528-Q3
QorvoTrans JFET N-CH 32V 5KA 2-Pin NI-200 (Alt: T2G6001528-Q3)
RoHS: Compliant
Min Qty: 100
Asia - 0
    T2G6001528-Q3
    DISTI # 772-T2G6001528-Q3
    QorvoRF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
    RoHS: Compliant
    0
    • 1:$105.7500
    • 25:$95.4400
    T2G6001528-Q3 EVAL BOARD
    DISTI # 772-T2G6001528-Q3EB
    QorvoRF Development Tools DC-6.0GHz 18 Watt 28V GaN Eval Brd
    RoHS: Compliant
    0
    • 1:$875.0000
    Imagen Parte # Descripción
    T2G6001528-SG

    Mfr.#: T2G6001528-SG

    OMO.#: OMO-T2G6001528-SG

    RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
    T2G6003028-FL

    Mfr.#: T2G6003028-FL

    OMO.#: OMO-T2G6003028-FL-318

    RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
    T2G6001528-SG

    Mfr.#: T2G6001528-SG

    OMO.#: OMO-T2G6001528-SG-318

    RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
    T2G6001528-SG-EVB

    Mfr.#: T2G6001528-SG-EVB

    OMO.#: OMO-T2G6001528-SG-EVB-1152

    RF Development Tools
    T2G6000528-Q3

    Mfr.#: T2G6000528-Q3

    OMO.#: OMO-T2G6000528-Q3-1152

    RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
    T2G6000528-XCC-1-Q3

    Mfr.#: T2G6000528-XCC-1-Q3

    OMO.#: OMO-T2G6000528-XCC-1-Q3-1190

    Nuevo y original
    T2G6001528-Q3,EVB1 5-6GH

    Mfr.#: T2G6001528-Q3,EVB1 5-6GH

    OMO.#: OMO-T2G6001528-Q3-EVB1-5-6GH-1190

    Nuevo y original
    T2G6003028

    Mfr.#: T2G6003028

    OMO.#: OMO-T2G6003028-1190

    Nuevo y original
    T2G6003028-FL-EVB

    Mfr.#: T2G6003028-FL-EVB

    OMO.#: OMO-T2G6003028-FL-EVB-1190

    Nuevo y original
    T2G6003028-FS EVAL BOARD

    Mfr.#: T2G6003028-FS EVAL BOARD

    OMO.#: OMO-T2G6003028-FS-EVAL-BOARD-1152

    RF Development Tools DC-6.0GHz 30 Watt 28V GaN FS Eval Brd
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de T2G6001528-Q3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    143,16 US$
    143,16 US$
    10
    136,00 US$
    1 360,02 US$
    100
    128,84 US$
    12 884,40 US$
    500
    121,69 US$
    60 843,00 US$
    1000
    114,53 US$
    114 528,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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