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T2G6001528-SG

T2G6001528-SG
Mfr. #:
T2G6001528-SG
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
T2G6001528-SG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
T2G6001528-SG más información
Atributo del producto
Valor de atributo
Fabricante:
Qorvo
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tipo de transistor:
HEMT
Tecnología:
GaN SiC
Ganar:
15 dB
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
5 A
Potencia de salida:
17 W
Pd - Disipación de energía:
28 W
Estilo de montaje:
SMD / SMT
Embalaje:
Bandeja
Configuración:
Único
Frecuencia de operación:
6 GHz
Serie:
T2G
Marca:
Qorvo
Sensible a la humedad:
Yes
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
100
Subcategoría:
Transistores
Parte # Alias:
1113256
Tags
T2G6001528-S, T2G6001, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC- 6 GHz, 15 W, 15 dB, 28 V, GaN
*** Services
CoC and 2-years warranty / RFQ for pricing
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
T2G6001528-SG
DISTI # 772-T2G6001528-SG		QorvoRF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
RoHS: Compliant		65
  • 1:$105.7500
  • 25:$95.4400
T2G6001528-SG-EVB
DISTI # 772-T2G6001528SGEVB		QorvoRF Development Tools
RoHS: Compliant		0
  • 1:$875.0000
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Disponibilidad
Valores:
146
En orden:
2129
Ingrese la cantidad:
El precio actual de T2G6001528-SG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
105,75 US$
105,75 US$
25
95,44 US$
2 386,00 US$
100
86,13 US$
8 613,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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