SI4456DY-T1-GE3

Mfr. #:: SI4456DY-T1-GE3
Fabricante:: Vishay / Siliconix
Descripción:: MOSFET 40V 33A 7.8W 3.8mohm @ 10V
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI4456DY-T1-GE3 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4456DY-T1-GE3 Datasheet SI4456DY-T1-GE3 Datasheet (P4-P6)SI4456DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:: SI4456DY-T1-GE3 más información

Atributo del producto
Valor de atributo

Fabricante:: Vishay

Categoria de producto:: MOSFET

RoHS:: E

Tecnología:: Si

Nombre comercial:: TrenchFET

Embalaje:: Carrete

Serie:: SI4

Marca:: Vishay / Siliconix

Tipo de producto:: MOSFET

Cantidad de paquete de fábrica:: 2500

Subcategoría:: MOSFET

Parte # Alias:: SI4456DY-GE3

Unidad de peso:: 0.006596 oz

Tags: SI4456, SI445, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4456DY-T1-GE3 Descripción

*** Source Electronics: Trans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R | MOSFET N-CH 40V 33A 8-SOIC

***ment14 APAC: N CHANNEL MOSFET, 40V, 33A, SOIC

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.3A; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):0.0045ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:2.8V ;RoHS Compliant: Yes

SI4456DY-T1-GE3 Más información

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI4456DY-T1-GE3 DISTI # SI4456DY-T1-GE3-ND	Vishay Siliconix	MOSFET N-CH 40V 33A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$1.3365
SI4456DY-T1-GE3 DISTI # SI4456DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4456DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$1.2900 5000:$1.1900 10000:$1.1900 15000:$1.0900 25000:$1.0900
SI4456DY-T1-GE3 DISTI # 26R1878	Vishay Intertechnologies	N CHANNEL MOSFET, 40V, 33A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:3.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes	0	1:$3.1500 10:$3.0000 25:$2.7700 50:$2.5000 100:$2.2300 250:$1.9500 500:$1.6700
SI4456DY-T1-GE3 DISTI # 15R5026	Vishay Intertechnologies	N CHANNEL MOSFET, 40V, 33A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes	0	1:$1.5200 1000:$1.4300 2000:$1.3500 4000:$1.2200 6000:$1.1700 10000:$1.1300
SI4456DY-T1-GE3 DISTI # 781-SI4456DY-GE3	Vishay Intertechnologies	MOSFET 40V 33A 7.8W 3.8mohm @ 10V RoHS: Compliant	0	1:$2.8000 10:$2.3300 100:$1.8000 500:$1.5800 1000:$1.3100 2500:$1.2200 5000:$1.1800

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SI4456DY-T1-E3 OMO.#: OMO-SI4456DY-T1-E3	MOSFET 40V 33A 7.8W 3.8mohm @ 10V
	Mfr.#: SI4456DY-T1-GE3 OMO.#: OMO-SI4456DY-T1-GE3	MOSFET 40V 33A 7.8W 3.8mohm @ 10V
	Mfr.#: SI4456DY-T1-GE3 OMO.#: OMO-SI4456DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 40V 33A 7.8W 3.8mohm @ 10V
	Mfr.#: SI4456DY-T1-E3-CUT TAPE OMO.#: OMO-SI4456DY-T1-E3-CUT-TAPE-1190	Nuevo y original
	Mfr.#: SI4456DY-T1-E3 OMO.#: OMO-SI4456DY-T1-E3-VISHAY	MOSFET N-CH 40V 33A 8-SOIC

Disponibilidad

Valores:: Available
En orden:: 3500
Ingrese la cantidad:

El precio actual de SI4456DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Empezar con

SI4456 3
SI445 33
SI44 574
SI4 2994

Nuevos productos

Si8410DB Chipscale N-Channel MOSFET

Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
Compare SI4456DY-T1-GE3

SI4456DYT1E3 vs SI4456DYT1E3CUTTAPE vs SI4456DYT1GE3
SiC43x 3 V to 24 V microBUCK®

Vishay’s SiC43x family features minimum external components with two resistors to set soft start, switching frequency, ILIMIT, and operating mode.
SIHJ6N65E, SIHJ7N65E, and SIHJ8N60E E Series MOSFE

Vishay has extended the offering of 600 V and 650 V E series power MOSFETs with three n-channel devices in the compact PowerPAK SO-8L package.
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.
N-Channel 8 V (D-S) MOSFETs

Vishay's TrenchFET® MOSFETs have an industry low on-resistance of 20 mΩ at 4.5 V, used in applications where low on-resistance is more critical than space.

More Newest Products

SI4456DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes