SI4456DY-T1-E3

Mfr. #:: SI4456DY-T1-E3
Fabricante:: Vishay
Descripción:: MOSFET N-CH 40V 33A 8-SOIC
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI4456DY-T1-E3 Ficha de datos
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Más información:: SI4456DY-T1-E3 más información

Atributo del producto
Valor de atributo

Fabricante: Vishay Siliconix

categoria de producto: Chips de IC

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SI4456DY-E3

Unidad de peso: 0.006596 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: 8-SOIC (0.154", 3.90mm Width)

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: 8-SO

Configuración: Único

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 7.8W

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 40V

Entrada-Capacitancia-Ciss-Vds: 5670pF @ 20V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 33A (Tc)

Rds-On-Max-Id-Vgs: 3.8 mOhm @ 20A, 10V

Vgs-th-Max-Id: 2.8V @ 250μA

Puerta-Carga-Qg-Vgs: 122nC @ 10V

Disipación de potencia Pd: 3.5 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 15 ns 8 ns

Hora de levantarse: 208 ns 58 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 23 A

Vds-Drain-Source-Breakdown-Voltage: 40 V

Resistencia a la fuente de desagüe de Rds: 3.8 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 56 ns 55 ns

Tiempo de retardo de encendido típico: 145 ns 21 ns

Modo de canal: Mejora

Tags: SI4456, SI445, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4456DY-T1-E3 Descripción

***ure Electronics: Single N-Channel 40 V 0.0038 Ohm Surface Mount Power Mosfet - SOIC-8

***C: MOSFET N-CH 40V 33A 8-SOIC MOSFET N-CH 40V 33A 8-SOIC

***et Europe: Trans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R

***nell: N CHANNEL MOSFET, 40V, 33A, SOIC

***i-Key: MOSFET N-CH 40V 33A 8-SOIC

***: N-CHANNEL 40-V (D-S) MOSFET

***ser: N-Channel MOSFETs N-CH 40V(D-S)

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0031Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:7.8W; No. Of Pins:8Pins Rohs Compliant: Yes

***ment14 APAC: N CHANNEL MOSFET, 40V, 33A, SOIC; Transi; N CHANNEL MOSFET, 40V, 33A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.8V; No. of Pins:8

SI4456DY-T1-E3 Más información

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI4456DY-T1-E3 DISTI # SI4456DY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 33A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$1.1847
SI4456DY-T1-E3 DISTI # SI4456DY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 33A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.3107 500:$1.5818 100:$2.0338 10:$2.5310 1:$2.8000
SI4456DY-T1-E3 DISTI # SI4456DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 33A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.3107 500:$1.5818 100:$2.0338 10:$2.5310 1:$2.8000
SI4456DY-T1-E3 DISTI # SI4456DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4456DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.8399 5000:$0.8149 10000:$0.7819 15000:$0.7599 25000:$0.7399
SI4456DY-T1-E3 DISTI # 64M1992	Vishay Intertechnologies	Trans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 64M1992) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$2.8000 10:$2.3300 25:$2.1500 50:$1.9800 100:$1.8000 250:$1.6900 500:$1.5800
SI4456DY-T1-E3 DISTI # 64M1992	Vishay Intertechnologies	N CHANNEL MOSFET, 40V, 33A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:40V,On Resistance Rds(on):4.5mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.8V,Product Range:- , RoHS Compliant: Yes	0	1:$2.8000 10:$2.3300 25:$2.1500 50:$1.9800 100:$1.8000 250:$1.6900 500:$1.5800
SI4456DY-T1-E3. DISTI # 26AC3332	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) MOSFET , ROHS COMPLIANT: YES	0	1:$0.8400 5000:$0.8150 10000:$0.7820 15000:$0.7600 25000:$0.7400
SI4456DY-T1-E3 DISTI # 781-SI4456DY-T1-E3	Vishay Intertechnologies	MOSFET 40V 33A 7.8W 3.8mohm @ 10V RoHS: Compliant	7	1:$2.8000 10:$2.3300 100:$1.8000 500:$1.5800 1000:$1.5100 2500:$1.5000
SI4456DY-T1-E3	Vishay Intertechnologies	MOSFET 40V 33A 7.8W 3.8mohm @ 10V	Americas -

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	Mfr.#: SI4456DY-T1-GE3 OMO.#: OMO-SI4456DY-T1-GE3	MOSFET 40V 33A 7.8W 3.8mohm @ 10V
	Mfr.#: SI4456DY-T1-GE3 OMO.#: OMO-SI4456DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 40V 33A 7.8W 3.8mohm @ 10V
	Mfr.#: SI4456DY-T1-E3-CUT TAPE OMO.#: OMO-SI4456DY-T1-E3-CUT-TAPE-1190	Nuevo y original
	Mfr.#: SI4456DY-T1-E3 OMO.#: OMO-SI4456DY-T1-E3-VISHAY	MOSFET N-CH 40V 33A 8-SOIC

Disponibilidad

Valores:: Available
En orden:: 2500
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El precio actual de SI4456DY-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,09 US$~~; ~~1,09 US$~~

10: ~~1,03 US$~~; ~~10,34 US$~~

100: ~~0,98 US$~~; ~~98,00 US$~~

500: ~~0,93 US$~~; ~~462,75 US$~~

1000: ~~0,87 US$~~; ~~871,10 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SI4456 3
SI445 33
SI44 574
SI4 2994

SI4456DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes