SI3430DV-T1-GE3

Mfr. #:: SI3430DV-T1-GE3
Fabricante:: Vishay
Descripción:: IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI3430DV-T1-GE3 Ficha de datos
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Más información:: SI3430DV-T1-GE3 más información

Atributo del producto
Valor de atributo

Fabricante: VISHAY

categoria de producto: Chips de IC

embalaje: Carrete

Alias de parte: SI3430DV-GE3

Unidad de peso: 0.000705 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: TSOP-6

Tecnología: Si

Número de canales: 1 Channel

Configuración: Único

Tipo transistor: 1 N-Channel

Disipación de potencia Pd: 1.14 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 9 ns

Hora de levantarse: 11 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 2.4 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Resistencia a la fuente de desagüe de Rds: 170 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 16 ns

Tiempo de retardo de encendido típico: 9 ns

Modo de canal: Mejora

Tags: SI3430, SI343, SI34, SI3

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3430DV-T1-GE3 Descripción

***ical: Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R

***nell: N CHANNEL MOSFET, 100V, 2.4A, TSOP-6

***ment14 APAC: N CHANNEL MOSFET, 100V, 2.4A, TSOP-6; Tr; N CHANNEL MOSFET, 100V, 2.4A, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V

SI3430DV-T1-GE3 Más información

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI3430DV-T1-GE3 DISTI # 21256746	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R RoHS: Compliant	838	500:$0.2214 323:$0.2246
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1159In Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1159In Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.4500
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4659 6000:$0.4639 12000:$0.4629 18000:$0.4609 30000:$0.4599
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R (Alt: SI3430DV-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€0.6869 10:€0.4689 25:€0.4029 50:€0.3719 100:€0.3579 500:€0.3529 1000:€0.3469
SI3430DV-T1-GE3 DISTI # 26R1863	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Product that comes on tape, but is not reeled (Alt: 26R1863) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.2600 25:$1.0400 50:$0.9170 100:$0.7940 250:$0.7380 500:$0.6820 1000:$0.5390
SI3430DV-T1-GE3 DISTI # 26R1863	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6,Transistor Polarity:N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes	838	1:$0.1550 25:$0.1550 50:$0.1550 100:$0.1550 250:$0.1550 500:$0.1550 1000:$0.1550
SI3430DV-T1-GE3 DISTI # 15R4923	Vishay Intertechnologies	N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2W , RoHS Compliant: Yes	0	1:$0.5100 3000:$0.5070 6000:$0.4830 12000:$0.4270
SI3430DV-T1-GE3 DISTI # 781-SI3430DV-GE3	Vishay Intertechnologies	MOSFET 100V 2.4A 2.0W 170mohm @ 10V RoHS: Compliant	3280	1:$1.2600 10:$1.0400 100:$0.7940 500:$0.6820 1000:$0.5390 3000:$0.5030 6000:$0.4780 9000:$0.4670
SI3430DV-T1-GE3 DISTI # 1871903	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6 RoHS: Compliant	838	1:$1.9800
SI3430DV-T1-GE3 DISTI # 1871903	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6 RoHS: Compliant	838	1:£1.1100 25:£0.9210 50:£0.8130 100:£0.7030 250:£0.6530

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SI3430DV-T1-GE3 OMO.#: OMO-SI3430DV-T1-GE3	MOSFET 100V 2.4A 2.0W 170mohm @ 10V
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3	MOSFET 100V, 170 MOHMS@10V
	Mfr.#: SI3430DV-T1-GE3 OMO.#: OMO-SI3430DV-T1-GE3-VISHAY	IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
	Mfr.#: SI3430DV OMO.#: OMO-SI3430DV-1190	Nuevo y original
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3-VISHAY	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R

Disponibilidad

Valores:: Available
En orden:: 2000
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El precio actual de SI3430DV-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,54 US$~~; ~~0,54 US$~~

10: ~~0,51 US$~~; ~~5,09 US$~~

100: ~~0,48 US$~~; ~~48,20 US$~~

500: ~~0,46 US$~~; ~~227,60 US$~~

1000: ~~0,43 US$~~; ~~428,40 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SI3430 3
SI343 39
SI34 504
SI3 1735

SI3430DV-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes