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SI3430DV-T1-E3

SI3430DV-T1-E3
Mfr. #:
SI3430DV-T1-E3
Fabricante:
Vishay
Descripción:
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI3430DV-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SI3430DV-T1-E3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
-
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI3430DV-E3
Unidad de peso
0.000705 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOT-23-6 Thin, TSOT-23-6
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
6-TSOP
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
1.14W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
100V
Entrada-Capacitancia-Ciss-Vds
-
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
1.8A (Ta)
Rds-On-Max-Id-Vgs
170 mOhm @ 2.4A, 10V
Vgs-th-Max-Id
2V @ 250μA (Min)
Puerta-Carga-Qg-Vgs
6.6nC @ 10V
Disipación de potencia Pd
1.14 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
11 ns
Hora de levantarse
11 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
2.4 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
170 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
16 ns
Tiempo de retardo de encendido típico
9 ns
Modo de canal
Mejora
Tags
SI3430, SI343, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 0.17 Ohms Surface Mount Power Mosfet - TSOP-6
***et Europe
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
***Components
MOSFET N-Channel 100V 1.8A TSOP6
***i-Key
MOSFET N-CH 100V 1.8A 6-TSOP
***ronik
N-CHANNEL-FET 2,4A 100V TSOP-6 RoHSconf
***ser
N-Channel MOSFETs 100V 8A 2W
***ponent Sense
MOSFET 100V 8A 2W
***ied Electronics & Automation
TRANSITOR, SI2323DS
***
100V, 170 MOHMS@10V
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.14W; No. Of Pins:6Pins Rohs Compliant: No
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI3430DV-T1-E3
DISTI # V72:2272_07433160		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
RoHS: Compliant		49
  • 25:$0.8309
  • 10:$0.8590
  • 1:$0.9585
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4500
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Cut TR (SOS) (Alt: SI3430DV-T1-E3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape		Americas - 61
  • 1:$0.8579
  • 30:$0.8069
  • 75:$0.8049
  • 150:$0.7699
  • 375:$0.6689
  • 750:$0.5459
  • 1500:$0.5439
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.5239
  • 6000:$0.5079
  • 12000:$0.4869
  • 18000:$0.4739
  • 30000:$0.4609
SI3430DV-T1-E3
DISTI # 06J7594		Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W , RoHS Compliant: Yes0
  • 1:$1.2100
  • 10:$1.0700
  • 25:$0.9980
  • 50:$0.9230
  • 100:$0.8480
  • 500:$0.6570
  • 1000:$0.5190
SI3430DV-T1-E3
DISTI # 65K1923		Vishay IntertechnologiesN CHANNEL MOSFET, 100V, 1.8A, TSOP, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):185mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes0
  • 1:$0.4700
  • 3000:$0.4700
SI3430DV-T1-E3.
DISTI # 15AC0293		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W,No. of Pins:6Pins , RoHS Compliant: No0
  • 1:$0.4700
  • 3000:$0.4700
SI3430DV-T1-E3
DISTI # 781-SI3430DV-E3		Vishay IntertechnologiesMOSFET 100V 8A 2W
RoHS: Compliant		360
  • 1:$1.2600
  • 10:$1.0400
  • 100:$0.7940
  • 500:$0.6820
  • 1000:$0.6000
  • 3000:$0.5990
SI3430DV-T1
DISTI # 781-SI3430DV		Vishay IntertechnologiesMOSFET 100V 8A 2W
RoHS: Not compliant		0
    SI3430DV-T1-E3Vishay Intertechnologies1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET16
    • 5:$1.0820
    • 1:$1.3525
    SI3430DV-T1-E3Vishay Intertechnologies1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET292
    • 81:$0.4500
    • 18:$0.7500
    • 1:$1.5000
    SI3430DV-T1-E3Vishay BLH 365
    • 5:$1.1250
    • 19:$0.7313
    • 70:$0.4219
    • 239:$0.3600
    SI3430DV-T1-E3.Vishay IntertechnologiesMOSFET 100V 8A 2W
    RoHS: Compliant    		Americas - 530
    • 10:$0.7040
    SI3430DV-T1-E3Vishay IntertechnologiesMOSFET 100V 8A 2W
    RoHS: Compliant    		Americas - Stock
      SI3430DV-T1-E3
      DISTI # C1S803600844371      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		49
      • 25:$0.8309
      • 10:$0.8590
      Imagen Parte # Descripción
      SI3430DV-T1-GE3

      Mfr.#: SI3430DV-T1-GE3

      OMO.#: OMO-SI3430DV-T1-GE3

      		 MOSFET 100V 2.4A 2.0W 170mohm @ 10V
      SI3430DV-T1-E3

      Mfr.#: SI3430DV-T1-E3

      OMO.#: OMO-SI3430DV-T1-E3

      		 MOSFET 100V, 170 MOHMS@10V
      SI3430DV-T1-GE3

      Mfr.#: SI3430DV-T1-GE3

      OMO.#: OMO-SI3430DV-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
      SI3430DV

      Mfr.#: SI3430DV

      OMO.#: OMO-SI3430DV-1190

      		 Nuevo y original
      SI3430DV-T1-E3

      Mfr.#: SI3430DV-T1-E3

      OMO.#: OMO-SI3430DV-T1-E3-VISHAY

      		 Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
      Disponibilidad
      Valores:
      Available
      En orden:
      4000
      Ingrese la cantidad:
      El precio actual de SI3430DV-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,54 US$
      0,54 US$
      10
      0,51 US$
      5,13 US$
      100
      0,49 US$
      48,60 US$
      500
      0,46 US$
      229,50 US$
      1000
      0,43 US$
      432,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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