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SIHG30N60AEL-GE3

SIHG30N60AEL-GE3
Mfr. #:
SIHG30N60AEL-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 78-SIHG120N60E-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHG30N60AEL-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHG30N60AEL-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247AC-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
28 A
Rds On - Resistencia de la fuente de drenaje:
120 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
120 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
250 W
Configuración:
Único
Modo de canal:
Mejora
Serie:
EL
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
19 S
Otoño:
33 ns
Tipo de producto:
MOSFET
Hora de levantarse:
24 ns
Cantidad de paquete de fábrica:
1
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
79 ns
Tiempo típico de retardo de encendido:
26 ns
Tags
SIHG30, SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
EL Series High Voltage MOSFETs
Vishay Semiconductors EL Series High Voltage MOSFETs are N-channel MOSFETs that reduces switching and conduction losses. These high voltage MOSFETs feature low Figure-Of-Merit (FOM), low input capacitance, and low gate charge. The EL high voltage MOSFETs operate in 650V drain-to-source voltage (VDS) and employs single configuration. These high voltage MOSFETs come with Unclamped Inductive Switching (UIS) avalanche energy rating. Typical applications include server and telecom power supplies, lighting, welding, induction heating, motor drives, and battery chargers.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHG30N60AEL-GE3
DISTI # SIHG30N60AEL-GE3-ND		Vishay SiliconixMOSFET N-CHAN 600V TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		49In Stock
  • 2500:$3.2200
  • 500:$4.0089
  • 100:$4.7093
  • 25:$5.4336
  • 10:$5.7480
  • 1:$6.4000
SIHG30N60AEL-GE3
DISTI # 59AC7399		Vishay IntertechnologiesN-CHANNEL 600V0
  • 2500:$2.9300
  • 1000:$3.1600
  • 500:$3.5500
  • 100:$3.9100
  • 50:$4.4200
  • 25:$4.7900
  • 10:$5.1800
  • 1:$5.8500
SIHG30N60AEL-GE3
DISTI # 78-SIHG30N60AEL-GE3		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SIHG120N60E-GE3
RoHS: Compliant		0
  • 500:$3.8100
  • 1000:$3.2100
  • 2500:$3.0500
SIHG30N60AEL-GE3
DISTI # 2932928		Vishay IntertechnologiesMOSFET, 600V, 28A, 150DEG C, 250W
RoHS: Compliant		50
  • 500:£3.3600
  • 250:£3.8100
  • 100:£4.2600
  • 10:£5.2000
  • 1:£6.3600
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Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de SIHG30N60AEL-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
500
3,81 US$
1 905,00 US$
1000
3,21 US$
3 210,00 US$
2500
3,05 US$
7 625,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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