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STW35N60DM2

STW35N60DM2
Mfr. #:
STW35N60DM2
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STW35N60DM2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
STW35N60DM2 más información STW35N60DM2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
28 A
Rds On - Resistencia de la fuente de drenaje:
110 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
25 V
Qg - Carga de puerta:
54 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
210 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
MDmesh
Serie:
STW35N60DM2
Marca:
STMicroelectronics
Otoño:
10.7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
17 ns
Cantidad de paquete de fábrica:
600
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
68 ns
Tiempo típico de retardo de encendido:
21.2 ns
Unidad de peso:
1.340411 oz
Tags
STW35N60, STW35, STW3, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
***ure Electronics
N-Channel 600 V 110 mOhm Flange Mount Mdmesh DM2 Power Mosfet - TO-247
***ark
Mosfet, N-Ch, 600V, 28A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.094Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-247 package
***ure Electronics
N-Channel 600 V 93 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247
***ark
Mosfet, N-Ch, 600V, 34A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-247 package
***ource
N channel 600 V 0 092 ¦¸ 29 A MDmesh II Power MOSFET TO 220 TO 247 TO 220FP
*** Source Electronics
Trans MOSFET N-CH 600V 31.5A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 29A TO-247
***ure Electronics
N-Channel 600 V 105 mOhm Flange Mount MDmesh™ II Power Mosfet - TO-247
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; On Resistance Rds(On):0.092Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:- Rohs Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 29A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***el Electronic
ANALOG DEVICES - AD633ARZ - Divider/Multiplier IC, 3 AMPs, 1 MHz Small Signal BW, 20 V/µs slew, 8 V to 18 V supply, SOIC-8
***icroelectronics
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package
***ark
Mosfet, N-Ch, 600V, 24A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-247
***nell
MOSFET, N-CH, 600V, 29A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.102ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
***r Electronics
Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***el Electronic
Aluminum Electrolytic Capacitors 100μF Radial, Can - SMD ±20% Tape & Reel (TR) TG 0.402 10.20mm Surface Mount Automotive 150mA CAP ALUM 100UF 20% 63V SMD
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 35A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ment14 APAC
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:105A
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ure Electronics
Single N-Channel 600 V 105 mOhm 60 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, Aec-Q101, N-Ch, 600V, 31A, 255W Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 600V 31A Automotive 3-Pin(3+Tab) TO-247 Tube
***nell
MOSFET, AEC-Q101, N-CH, 600V, 31A, 255W; Transistor Polarity: N Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 255W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS Series; Automotive Qualification Standard: AEC-Q101; SVHC: No SVHC (15-Jan-2019)
***ineon SCT
Infineon's CoolMOS™ CPA Superjunction MOSFET is specially designed for DC-DC converters for automotive application, PG-TO247-3, RoHS
***ineon
Summary of Features: Lowest figure-of-merit RON x Qg; Ultra low gate charge; Extreme dv/dt rated; High peak current capability; Automotive AEC Q101 qualified; Green package (RoHS compliant); CoolMOS CPA is specially designed for:; DC/DC converters for Automotive Application
MDmesh DM2 Power MOSFETs
STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descripción Valores Precio
STW35N60DM2
DISTI # 31348246		STMicroelectronicsTrans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		14
  • 4:$2.5260
STW35N60DM2
DISTI # 497-16356-5-ND		STMicroelectronicsMOSFET N-CH 600V 28A
RoHS: Compliant
Min Qty: 1
Container: Tube		579In Stock
  • 2520:$2.7064
  • 510:$3.3779
  • 120:$3.9681
  • 30:$4.5787
  • 10:$4.8430
  • 1:$5.3900
STW35N60DM2
DISTI # V36:1790_13795935		STMicroelectronicsTrans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 600000:$2.2580
  • 300000:$2.2620
  • 60000:$2.8870
  • 6000:$4.1580
  • 600:$4.3800
STW35N60DM2
DISTI # STW35N60DM2		STMicroelectronicsTrans MOSFET N-CH 600V 28A 3-Pin TO-247 Tube (Alt: STW35N60DM2)
RoHS: Compliant
Min Qty: 600
Container: Tube		Asia - 0
  • 30000:$2.3684
  • 15000:$2.4324
  • 6000:$2.5000
  • 3000:$2.6087
  • 1800:$2.7273
  • 1200:$2.8571
  • 600:$3.0000
STW35N60DM2
DISTI # STW35N60DM2		STMicroelectronicsTrans MOSFET N-CH 600V 28A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW35N60DM2)
RoHS: Not Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 6000:$2.3900
  • 3600:$2.4900
  • 2400:$2.5900
  • 1200:$2.6900
  • 600:$2.8900
STW35N60DM2
DISTI # STW35N60DM2		STMicroelectronicsTrans MOSFET N-CH 600V 28A 3-Pin TO-247 Tube (Alt: STW35N60DM2)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.1900
  • 500:€2.2900
  • 100:€2.3900
  • 50:€2.4900
  • 25:€2.5900
  • 10:€2.6900
  • 1:€2.9900
STW35N60DM2
DISTI # 79Y9478		STMicroelectronicsMOSFET, N-CH, 600V, 28A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:28A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.094ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes486
  • 500:$3.2400
  • 250:$3.6200
  • 100:$3.8200
  • 50:$4.0100
  • 25:$4.2100
  • 10:$4.4000
  • 1:$5.1800
STW35N60DM2
DISTI # 511-STW35N60DM2		STMicroelectronicsMOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
RoHS: Compliant		481
  • 1:$5.1300
  • 10:$4.3600
  • 100:$3.7800
  • 250:$3.5800
  • 500:$3.2100
  • 1000:$2.7100
  • 2500:$2.5700
STW35N60DM2
DISTI # 1116482P		STMicroelectronicsMOSFET N-CH 600V 28A MDMESH DM2 TO-247, TU160
  • 600:£2.3300
  • 300:£2.5950
  • 90:£2.8750
  • 30:£3.1550
STW35N60DM2
DISTI # STW35N60DM2		STMicroelectronicsTransistor: N-MOSFET,unipolar,600V,17A,210W,TO24730
  • 30:$3.8100
  • 10:$4.2400
  • 3:$5.2800
  • 1:$6.1300
STW35N60DM2STMicroelectronicsPower Field-Effect Transistor
RoHS: Compliant		150
    STW35N60DM2
    DISTI # TMOS1096    		STMicroelectronicsN-CH 600V 28A 94mOhm TO247
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 600:$2.8200
    STW35N60DM2
    DISTI # 2531118    		STMicroelectronicsMOSFET, N-CH, 600V, 28A, TO-247
    RoHS: Compliant    		486
    • 2520:$4.0900
    • 510:$5.1000
    • 120:$5.9800
    • 30:$6.9000
    • 10:$7.3000
    • 1:$8.1200
    STW35N60DM2
    DISTI # 2531118    		STMicroelectronicsMOSFET, N-CH, 600V, 28A, TO-247476
    • 500:£2.2200
    • 250:£2.4800
    • 100:£2.6200
    • 10:£3.0200
    • 1:£4.3800
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    Disponibilidad
    Valores:
    481
    En orden:
    2464
    Ingrese la cantidad:
    El precio actual de STW35N60DM2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    5,13 US$
    5,13 US$
    10
    4,36 US$
    43,60 US$
    100
    3,78 US$
    378,00 US$
    250
    3,58 US$
    895,00 US$
    500
    3,21 US$
    1 605,00 US$
    1000
    2,71 US$
    2 710,00 US$
    2500
    2,57 US$
    6 425,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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