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FDFME3N311ZT

FDFME3N311ZT
Mfr. #:
FDFME3N311ZT
Fabricante:
ON Semiconductor
Descripción:
MOSFET N-CH 30V 1.8A 6MICROFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDFME3N311ZT Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
FAIRCHILD
categoria de producto
FET - Single
embalaje
Carrete
Unidad de peso
0.000889 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
microFET-6
Tecnología
Si
Número de canales
1 Channel
Configuración
Single with Schottky Diode
Tipo transistor
1 N-Channel
Disipación de potencia Pd
1.1 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
2.8 ns
Hora de levantarse
16 ns
Vgs-Puerta-Fuente-Voltaje
12 V
Id-corriente-de-drenaje-continua
1.6 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
299 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
35 ns
Tiempo de retardo de encendido típico
12 ns
Transconductancia directa-Mín.
2.8 S
Modo de canal
Mejora
Tags
FDFME, FDFM, FDF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.299ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:0.5W ;RoHS Compliant: Yes
***rchild Semiconductor
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
Parte # Mfg. Descripción Valores Precio
FDFME3N311ZT
DISTI # FDFME3N311ZTTR-ND		ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 5000:$0.2525
FDFME3N311ZT
DISTI # FDFME3N311ZTCT-ND		ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FDFME3N311ZT
    DISTI # FDFME3N311ZTDKR-ND    		ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FDFME3N311ZT
      DISTI # FDFME3N311ZT      		ON SemiconductorTrans MOSFET N-CH 30V 1.8A 6-Pin MicroFET T/R (Alt: FDFME3N311ZT)
      RoHS: Compliant
      Min Qty: 5000
      Container: Tape and Reel      		Europe - 0
      • 5000:€0.4469
      • 10000:€0.3479
      • 20000:€0.2889
      • 30000:€0.2429
      • 50000:€0.2249
      FDFME3N311ZT
      DISTI # 73R3644      		ON SemiconductorMOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:500mW RoHS Compliant: Yes0
      • 1:$0.6400
      • 25:$0.5270
      • 50:$0.4340
      • 100:$0.3400
      • 250:$0.3170
      • 500:$0.2950
      • 1000:$0.2720
      FDFME3N311ZT
      DISTI # 64R3000      		ON SemiconductorMOSFET Transistor, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes0
      • 1:$0.2860
      • 5000:$0.2840
      • 10000:$0.2500
      • 25000:$0.2250
      • 50000:$0.2130
      FDFME3N311ZTFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		60662
      • 1000:$0.2500
      • 500:$0.2600
      • 100:$0.2700
      • 25:$0.2900
      • 1:$0.3100
      FDFME3N311ZT
      DISTI # 1813536      		ON SemiconductorMOSFET Transistor
      RoHS: Compliant      		0
      • 5000:£0.2410
      FDFME3N311ZT
      DISTI # 1813536      		ON SemiconductorMOSFET Transistor
      RoHS: Compliant      		0
      • 5000:$0.9780
      Imagen Parte # Descripción
      FDFME3N311ZT

      Mfr.#: FDFME3N311ZT

      OMO.#: OMO-FDFME3N311ZT

      		 MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode
      FDFME3N311ZT

      Mfr.#: FDFME3N311ZT

      OMO.#: OMO-FDFME3N311ZT-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V 1.8A 6MICROFET
      FDFME3N311ZT/1T

      Mfr.#: FDFME3N311ZT/1T

      OMO.#: OMO-FDFME3N311ZT-1T-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de FDFME3N311ZT es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,32 US$
      0,32 US$
      10
      0,30 US$
      3,04 US$
      100
      0,29 US$
      28,76 US$
      500
      0,27 US$
      135,80 US$
      1000
      0,26 US$
      255,60 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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