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SISH617DN-T1-GE3

SISH617DN-T1-GE3
Mfr. #:
SISH617DN-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET -30V Vds 25V Vgs PowerPAK 1212-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SISH617DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISH617DN-T1-GE3 DatasheetSISH617DN-T1-GE3 Datasheet (P4-P6)SISH617DN-T1-GE3 Datasheet (P7)
ECAD Model:
Más información:
SISH617DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-1212-8
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
35 A
Rds On - Resistencia de la fuente de drenaje:
12.3 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
25 V
Qg - Carga de puerta:
59 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
52 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SIS
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
35 S
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
9 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
32 ns
Tiempo típico de retardo de encendido:
11 ns
Tags
SISH6, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Parte # Mfg. Descripción Valores Precio
SISH617DN-T1-GE3
DISTI # SISH617DN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5740In Stock
  • 1000:$0.3942
  • 500:$0.4993
  • 100:$0.6045
  • 10:$0.7750
  • 1:$0.8700
SISH617DN-T1-GE3
DISTI # SISH617DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5740In Stock
  • 1000:$0.3942
  • 500:$0.4993
  • 100:$0.6045
  • 10:$0.7750
  • 1:$0.8700
SISH617DN-T1-GE3
DISTI # SISH617DN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.3402
  • 6000:$0.3444
  • 3000:$0.3700
SISH617DN-T1-GE3
DISTI # SISH617DN-T1-GE3		Vishay IntertechnologiesP-CHANEL 30 V (D-S) MOSFET 12.3 MO @ 10V MO @ 7.5V 22.2 MO @ 4.5V - Tape and Reel (Alt: SISH617DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.3109
  • 30000:$0.3199
  • 18000:$0.3289
  • 12000:$0.3429
  • 6000:$0.3529
SISH617DN-T1-GE3
DISTI # 59AC7451		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
  • 50000:$0.3140
  • 30000:$0.3280
  • 20000:$0.3530
  • 10000:$0.3770
  • 5000:$0.4090
  • 1:$0.4180
SISH617DN-T1-GE3
DISTI # 78AC6532		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W,Transistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,RoHS Compliant: Yes5975
  • 1000:$0.3930
  • 500:$0.4910
  • 250:$0.5430
  • 100:$0.5950
  • 50:$0.6580
  • 25:$0.7210
  • 10:$0.7840
  • 1:$0.9800
SISH617DN-T1-GE3
DISTI # 78-SISH617DN-T1-GE3		Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs PowerPAK 1212-8
RoHS: Compliant		8813
  • 1:$0.9600
  • 10:$0.7750
  • 100:$0.5880
  • 500:$0.4860
  • 1000:$0.3880
  • 3000:$0.3520
  • 6000:$0.3280
  • 9000:$0.3150
  • 24000:$0.3030
SISH617DN-T1-GE3
DISTI # 1783697		Vishay IntertechnologiesP-CHANEL 30 V (D-S) MOSFET POWERPAK 1212, RL6000
  • 3000:£0.2600
SISH617DN-T1-GE3
DISTI # 2932960		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W
RoHS: Compliant		5975
  • 1000:$0.5640
  • 500:$0.5950
  • 250:$0.7020
  • 100:$0.8530
  • 10:$1.0900
  • 1:$1.3200
SISH617DN-T1-GE3
DISTI # 2932960		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W5975
  • 500:£0.3560
  • 250:£0.3940
  • 100:£0.4320
  • 25:£0.5700
  • 5:£0.6360
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VS-8CVH01HM3/I

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 Rectifiers 100V 8A SlimDPAK Fred
VS-10CVH01HM3/I

Mfr.#: VS-10CVH01HM3/I

OMO.#: OMO-VS-10CVH01HM3-I

 Rectifiers 100V 10A SlimDPAK Fred
SIS412DN-T1-GE3

Mfr.#: SIS412DN-T1-GE3

OMO.#: OMO-SIS412DN-T1-GE3

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Mfr.#: TPS70933DRVT

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Mfr.#: DRV8873SPWPR

OMO.#: OMO-DRV8873SPWPR-TEXAS-INSTRUMENTS

 SENSOR MAGNETIC HALL EFFECT
SIS412DN-T1-GE3

Mfr.#: SIS412DN-T1-GE3

OMO.#: OMO-SIS412DN-T1-GE3-VISHAY

 MOSFET N-CH 30V 12A 1212-8 PPAK
VS-10CVH01HM3/I

Mfr.#: VS-10CVH01HM3/I

OMO.#: OMO-VS-10CVH01HM3-I-VISHAY

 DIODE GEN PURPOSE 100V SLIMDPAK
VS-8CVH01HM3/I

Mfr.#: VS-8CVH01HM3/I

OMO.#: OMO-VS-8CVH01HM3-I-VISHAY

 DIODE GEN PURPOSE 100V SLIMDPAK
Disponibilidad
Valores:
Available
En orden:
1991
Ingrese la cantidad:
El precio actual de SISH617DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,96 US$
0,96 US$
10
0,78 US$
7,75 US$
100
0,59 US$
58,80 US$
500
0,49 US$
243,00 US$
1000
0,39 US$
388,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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