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SIS412DN-T1-GE3

SIS412DN-T1-GE3
Mfr. #:
SIS412DN-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 30V 12A 1212-8 PPAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIS412DN-T1-GE3 Ficha de datos
Entrega:
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Más información:
SIS412DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
Chips de IC
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SIS412DN-GE3
Estilo de montaje
SMD / SMT
Paquete-Estuche
PowerPAKR 1212-8
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
PowerPAKR 1212-8
Configuración
Fuente triple de drenaje cuádruple simple
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
15.6W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
435pF @ 15V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
12A (Tc)
Rds-On-Max-Id-Vgs
24 mOhm @ 7.8A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Puerta-Carga-Qg-Vgs
12nC @ 10V
Disipación de potencia Pd
3.2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
12 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
12 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
24 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
15 ns
Tiempo de retardo de encendido típico
15 ns
Transconductancia directa-Mín.
17 S
Modo de canal
Mejora
Tags
SIS412DN-T1-GE3, SIS412DN-T1-G, SIS412DN-T1, SIS412DN-T, SIS412D, SIS412, SIS41, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiS412DN Series N-Channel 30 V 24 mOhms SMT Power Mosfet - PowerPAK-1212-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12A; On Resistance Rds(On):0.02Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; No. Of Pins:8Pinsrohs Compliant: No
***ment14 APAC
MOSFET, N-CH, 30V, 12A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:15.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:15.6W; Voltage Vgs Max:20V
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Parte # Mfg. Descripción Valores Precio
SIS412DN-T1-GE3
DISTI # V36:1790_07433130		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		39000
  • 3000:$0.2134
SIS412DN-T1-GE3
DISTI # V72:2272_07433130		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		4134
  • 3000:$0.2061
  • 1000:$0.2232
  • 500:$0.2668
  • 250:$0.3099
  • 100:$0.3109
  • 25:$0.3807
  • 10:$0.3822
  • 1:$0.4481
SIS412DN-T1-GE3
DISTI # SIS412DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 12A 1212-8 PPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		61677In Stock
  • 1000:$0.2719
  • 500:$0.3399
  • 100:$0.4589
  • 10:$0.5950
  • 1:$0.6800
SIS412DN-T1-GE3
DISTI # SIS412DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 12A 1212-8 PPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		61677In Stock
  • 1000:$0.2719
  • 500:$0.3399
  • 100:$0.4589
  • 10:$0.5950
  • 1:$0.6800
SIS412DN-T1-GE3
DISTI # SIS412DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 12A 1212-8 PPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		60000In Stock
  • 3000:$0.2392
SIS412DN-T1-GE3
DISTI # 30544025		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		39000
  • 3000:$0.2134
SIS412DN-T1-GE3
DISTI # 30214242		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		9000
  • 3000:$0.2521
SIS412DN-T1-GE3
DISTI # 29055604		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		4134
  • 3000:$0.2061
  • 1000:$0.2232
  • 500:$0.2668
  • 250:$0.3099
  • 100:$0.3109
  • 31:$0.3807
SIS412DN-T1-GE3
DISTI # 30605326		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		2978
  • 1000:$0.3417
  • 500:$0.4322
  • 100:$0.4437
  • 50:$0.5419
  • 32:$0.8135
SIS412DN-T1-GE3
DISTI # SIS412DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS412DN-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
  • 3000:$0.2179
  • 6000:$0.2109
  • 12000:$0.2029
  • 18000:$0.1969
  • 30000:$0.1919
SIS412DN-T1-GE3
DISTI # SIS412DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R (Alt: SIS412DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 3000
  • 3000:$2.4200
  • 6000:$1.6690
  • 9000:$1.2410
  • 15000:$1.0083
  • 30000:$0.9132
  • 75000:$0.8800
  • 150000:$0.8491
SIS412DN-T1-GE3
DISTI # SIS412DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R (Alt: SIS412DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.4999
  • 6000:€0.3409
  • 12000:€0.2929
  • 18000:€0.2709
  • 30000:€0.2519
SIS412DN-T1-GE3
DISTI # 55R1906		Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 12A, POWERPAK8,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:40V,On Resistance Rds(on):20mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,No. of Pins:8, RoHS Compliant: Yes12853
  • 1:$0.7160
  • 10:$0.6330
  • 25:$0.5880
  • 50:$0.5430
  • 100:$0.4990
  • 500:$0.3810
  • 1000:$0.3140
SIS412DN-T1-GE3.
DISTI # 15AC0289		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:15.6W,No. of Pins:8Pins , RoHS Compliant: No3000
  • 1:$0.2180
  • 3000:$0.2110
  • 6000:$0.2030
  • 12000:$0.1960
  • 18000:$0.1920
  • 30000:$0.1880
SIS412DN-T1-GE3
DISTI # 70459588		Vishay SiliconixMOSFET N-CH 30V 12A 1212-8 PPAK
RoHS: Compliant		0
  • 3000:$0.6670
  • 6000:$0.5120
SIS412DN-T1-GE3
DISTI # 781-SIS412DN-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
RoHS: Compliant		41611
  • 1:$0.6000
  • 10:$0.4790
  • 100:$0.3640
  • 500:$0.3000
  • 1000:$0.2400
  • 3000:$0.2180
  • 6000:$0.2030
  • 9000:$0.1960
  • 24000:$0.1880
SIS412DN-T1-GE3Vishay SiliconixPOWER FIELD-EFFECT TRANSISTOR, 8.7A I(D), 30V, 0.024OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET800
  • 201:$0.2100
  • 45:$0.3000
  • 1:$0.6000
SIS412DN-T1-GE3Vishay Intertechnologies 2375
    SIS412DNT1GE3Vishay Intertechnologies 
    RoHS: Compliant    		Europe - 3000
      SIS412DN-T1-GE3Vishay IntertechnologiesINSTOCK611
        SIS412DN-T1-GE3
        DISTI # 1779238        		Vishay IntertechnologiesMOSFET, N-CH, 30V, 12A, POWERPAK8
        RoHS: Compliant        		13032
        • 1:$0.9500
        • 10:$0.7590
        • 100:$0.5770
        • 500:$0.4750
        • 1000:$0.3810
        • 3000:$0.3460
        • 6000:$0.3400
        SIS412DN-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
        RoHS: Compliant        		Americas - 6000
        • 3000:$0.2150
        • 6000:$0.2030
        • 12000:$0.1970
        • 24000:$0.1940
        SI7804DN-T1-E3Vishay IntertechnologiesMOSFET 30V 10A 0.0185OhmAmericas -
          SIS412DN-T1-GE3
          DISTI # C1S804000723543          		Vishay IntertechnologiesMOSFETs
          RoHS: Compliant          		4134
          • 250:$0.3109
          • 100:$0.3118
          • 25:$0.3822
          • 10:$0.3840
          SIS412DN-T1-GE3
          DISTI # C1S806001139235          		Vishay IntertechnologiesMOSFETs
          RoHS: Compliant          		2978
          • 1000:$0.2680
          • 500:$0.3390
          • 100:$0.3480
          • 50:$0.4250
          • 10:$0.6380
          SIS412DN-T1-GE3
          DISTI # C1S803601813916          		Vishay IntertechnologiesMOSFETs
          RoHS: Compliant          		39000
          • 3000:$0.2134
          SIS412DN-T1-GE3
          DISTI # 1779238          		Vishay IntertechnologiesMOSFET, N-CH, 30V, 12A, POWERPAK8
          RoHS: Compliant          		13603
          • 5:£0.4180
          • 25:£0.3920
          • 100:£0.2810
          • 250:£0.2570
          • 500:£0.2320
          Imagen Parte # Descripción
          SIS412DN-T1-GE3

          Mfr.#: SIS412DN-T1-GE3

          OMO.#: OMO-SIS412DN-T1-GE3

          		 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
          SIS412DN-T1-GE3-CUT TAPE

          Mfr.#: SIS412DN-T1-GE3-CUT TAPE

          OMO.#: OMO-SIS412DN-T1-GE3-CUT-TAPE-1190

          		 Nuevo y original
          SIS412DN

          Mfr.#: SIS412DN

          OMO.#: OMO-SIS412DN-1190

          		 Nuevo y original
          SIS412DN-T1

          Mfr.#: SIS412DN-T1

          OMO.#: OMO-SIS412DN-T1-1190

          		 Nuevo y original
          SIS412DN-T1-E3

          Mfr.#: SIS412DN-T1-E3

          OMO.#: OMO-SIS412DN-T1-E3-1190

          		 Nuevo y original
          SIS412DN-T1-GE

          Mfr.#: SIS412DN-T1-GE

          OMO.#: OMO-SIS412DN-T1-GE-1190

          		 Nuevo y original
          SIS412DN-T1-GE3

          Mfr.#: SIS412DN-T1-GE3

          OMO.#: OMO-SIS412DN-T1-GE3-VISHAY

          		 MOSFET N-CH 30V 12A 1212-8 PPAK
          SIS412DN-T1-GE3 QFN8

          Mfr.#: SIS412DN-T1-GE3 QFN8

          OMO.#: OMO-SIS412DN-T1-GE3-QFN8-1190

          		 Nuevo y original
          SIS412DN-T1-GE3-W

          Mfr.#: SIS412DN-T1-GE3-W

          OMO.#: OMO-SIS412DN-T1-GE3-W-1190

          		 Nuevo y original
          SIS412DN-TI-GE3

          Mfr.#: SIS412DN-TI-GE3

          OMO.#: OMO-SIS412DN-TI-GE3-1190

          		 Nuevo y original
          Disponibilidad
          Valores:
          Available
          En orden:
          2500
          Ingrese la cantidad:
          El precio actual de SIS412DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          0,28 US$
          0,28 US$
          10
          0,27 US$
          2,68 US$
          100
          0,25 US$
          25,38 US$
          500
          0,24 US$
          119,85 US$
          1000
          0,23 US$
          225,60 US$
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