OMO ElectronicOMO Electronic
Expand menu
0 Carro

SiSA26DN-T1-GE3

SiSA26DN-T1-GE3
Mfr. #:
SiSA26DN-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 25V Vds 16V Vgs PowerPAK 1212-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SiSA26DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SiSA26DN-T1-GE3 DatasheetSiSA26DN-T1-GE3 Datasheet (P4-P6)SiSA26DN-T1-GE3 Datasheet (P7)
ECAD Model:
Más información:
SiSA26DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-1212-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
60 A
Rds On - Resistencia de la fuente de drenaje:
2.15 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
16 V, - 12 V
Qg - Carga de puerta:
44 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
39 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
SiSA26DN
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
88 S
Otoño:
8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
23 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
16 ns
Tiempo típico de retardo de encendido:
9 ns
Tags
SISA, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Gen IV Power MOSFET N-Channel Single 25V VDS +16V -12V VGS 60A ID 8-Pin PowerPAK 1212 T/R
***ical
Trans MOSFET N-CH 25V 29.1A 8-Pin PowerPAK 1212 EP T/R
***i-Key
MOSFET N-CH 25V 60A POWERPAK1212
***ark
Mosfet, N-Ch, 25V, 60A, 150Deg C, 39W; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.00215Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 25V, 60A, 150DEG C, 39W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00215ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:39W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANAL N, 25V, 60A, 150°C, 39W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:25V; Resistenza di Attivazione Rds(on):0.00215ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.5V; Dissipazione di Potenza Pd:39W; Modello Case Transistor:PowerPAK 1212; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SISA26DN-T1-GE3
DISTI # V72:2272_21388883		Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET6000
  • 75000:$0.2871
  • 30000:$0.2901
  • 15000:$0.2932
  • 6000:$0.2963
  • 3000:$0.2994
  • 1000:$0.3261
  • 500:$0.4122
  • 250:$0.4599
  • 100:$0.5110
  • 50:$0.5923
  • 25:$0.6581
  • 10:$0.7377
  • 1:$0.9122
SISA26DN-T1-GE3
DISTI # V99:2348_21388883		Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET0
  • 6000000:$0.3107
  • 3000000:$0.3109
  • 600000:$0.3155
  • 60000:$0.3218
  • 6000:$0.3228
SISA26DN-T1-GE3
DISTI # SISA26DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 25V 60A POWERPAK1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5631In Stock
  • 1000:$0.3668
  • 500:$0.4586
  • 100:$0.5801
  • 10:$0.7570
  • 1:$0.8600
SISA26DN-T1-GE3
DISTI # SISA26DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 25V 60A POWERPAK1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5631In Stock
  • 1000:$0.3668
  • 500:$0.4586
  • 100:$0.5801
  • 10:$0.7570
  • 1:$0.8600
SISA26DN-T1-GE3
DISTI # SISA26DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 25V 60A POWERPAK1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.2820
  • 15000:$0.2894
  • 6000:$0.3005
  • 3000:$0.3228
SISA26DN-T1-GE3
DISTI # 31355217		Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET6000
  • 15000:$0.2932
  • 6000:$0.2963
  • 3000:$0.2994
  • 1000:$0.3261
  • 500:$0.4122
  • 250:$0.4599
  • 100:$0.5110
  • 50:$0.5923
  • 25:$0.6581
  • 22:$0.7377
SISA26DN-T1-GE3
DISTI # SISA26DN-T1-GE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 25V VDS +16V -12V VGS 60A ID8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA26DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.2709
  • 30000:$0.2789
  • 18000:$0.2869
  • 12000:$0.2989
  • 6000:$0.3079
SISA26DN-T1-GE3
DISTI # 81AC2791		Vishay IntertechnologiesMOSFET, N-CH, 25V, 60A, 150DEG C, 39W,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.00215ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes6040
  • 1000:$0.3430
  • 500:$0.4280
  • 250:$0.4740
  • 100:$0.5190
  • 50:$0.5740
  • 25:$0.6290
  • 10:$0.6840
  • 1:$0.8480
SISA26DN-T1-GE3
DISTI # 59AC7446		Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET0
  • 50000:$0.2740
  • 30000:$0.2870
  • 20000:$0.3080
  • 10000:$0.3290
  • 5000:$0.3570
  • 1:$0.3650
SiSA26DN-T1-GE3
DISTI # 78-SISA26DN-T1-GE3		Vishay IntertechnologiesMOSFET 25V Vds 16V Vgs PowerPAK 1212-8
RoHS: Compliant		5895
  • 1:$0.8400
  • 10:$0.6770
  • 100:$0.5140
  • 500:$0.4240
  • 1000:$0.3400
  • 3000:$0.3080
SISA26DN-T1-GE3
DISTI # 2932955		Vishay IntertechnologiesMOSFET, N-CH, 25V, 60A, 150DEG C, 39W6045
  • 500:£0.3070
  • 250:£0.3400
  • 100:£0.3720
  • 10:£0.5390
  • 1:£0.6960
SISA26DN-T1-GE3
DISTI # 2932955		Vishay IntertechnologiesMOSFET, N-CH, 25V, 60A, 150DEG C, 39W
RoHS: Compliant		6040
  • 1000:$0.4720
  • 500:$0.4990
  • 250:$0.5870
  • 100:$0.7140
  • 10:$0.9090
  • 1:$1.1000
Imagen Parte # Descripción
OPA690IDBVT

Mfr.#: OPA690IDBVT

OMO.#: OMO-OPA690IDBVT

 High Speed Operational Amplifiers Wideband Voltage Feeback
FDMC2D8N025S

Mfr.#: FDMC2D8N025S

OMO.#: OMO-FDMC2D8N025S

 MOSFET N-ChannelPowerTrench MOSFET,PwrClip 33Sin
LTC3854EMSE#PBF

Mfr.#: LTC3854EMSE#PBF

OMO.#: OMO-LTC3854EMSE-PBF

 Switching Voltage Regulators Small Footprint, Low Pin Count Synchronous Step-Down Controller with Wide Vin Range
MMZ1608B301CTAH0

Mfr.#: MMZ1608B301CTAH0

OMO.#: OMO-MMZ1608B301CTAH0

 Ferrite Beads 300 OHM 25%
NVTFS5C471NLTAG

Mfr.#: NVTFS5C471NLTAG

OMO.#: OMO-NVTFS5C471NLTAG

 MOSFET AFSM T6 40V LL U8FL
107RZM050M

Mfr.#: 107RZM050M

OMO.#: OMO-107RZM050M-ILLINOIS-CAPACITOR

 Aluminum Electrolytic Capacitors - Leaded 100uF 50V 20%
OPA690IDBVT

Mfr.#: OPA690IDBVT

OMO.#: OMO-OPA690IDBVT-TEXAS-INSTRUMENTS

 IC OPAMP VFB 300MHZ SOT23-6
REA471M1EBK-1012P

Mfr.#: REA471M1EBK-1012P

OMO.#: OMO-REA471M1EBK-1012P-1130

 Aluminum Electrolytic Capacitors - Leaded 25V 470uF 20% 10x12.5 mm
MMZ1608B301CTAH0

Mfr.#: MMZ1608B301CTAH0

OMO.#: OMO-MMZ1608B301CTAH0-TDK

 EMI Filter Beads, Chips & Arrays 300 OHM 25%
FDMC2D8N025S

Mfr.#: FDMC2D8N025S

OMO.#: OMO-FDMC2D8N025S-ON-SEMICONDUCTOR

 MOSFET N-CH 25V 124A 8PQFN
Disponibilidad
Valores:
Available
En orden:
1988
Ingrese la cantidad:
El precio actual de SiSA26DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,84 US$
0,84 US$
10
0,68 US$
6,77 US$
100
0,51 US$
51,40 US$
500
0,42 US$
212,00 US$
1000
0,34 US$
340,00 US$
Empezar con
Nuevos productos
More Newest Products
Top