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| PartNumber | SISA01DN-T1-GE3 | SISA04DN-T1-GE3 | SISA10DN |
| Description | MOSFET -30V Vds 16V Vgs PowerPAK 1212-8 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | E | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 60 A | 40 A | - |
| Rds On Drain Source Resistance | 4.9 mOhms | 1.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 1.1 V | - |
| Vgs Gate Source Voltage | 16 V, - 20 V | 20 V, - 16 V | - |
| Qg Gate Charge | 56 nC | 77 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 52 W | 52 W | - |
| Configuration | Single | Single | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SIS | SIS | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 10 ns | 10 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 6 ns | 17 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 39 ns | 25 ns | - |
| Typical Turn On Delay Time | 15 ns | 24 ns | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 105 S | - |
| Part # Aliases | - | SISA04DN-GE3 | - |