OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

SIHB15N60E-GE3

SIHB15N60E-GE3
Mfr. #:
SIHB15N60E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHB15N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB15N60E-GE3 DatasheetSIHB15N60E-GE3 Datasheet (P4-P6)SIHB15N60E-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SIHB15N60E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
15 A
Rds On - Resistencia de la fuente de drenaje:
280 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
39 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
180 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
22 ns
Tipo de producto:
MOSFET
Hora de levantarse:
26 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
41 ns
Tiempo típico de retardo de encendido:
16 ns
Unidad de peso:
0.050717 oz
Tags
SIHB15N60, SIHB15N6, SIHB15, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    L***a
    L***a
    BR

    all right

    2019-02-11
    A***V
    A***V
    RU

    I received what i ordered, the terms are quite satisfactory. In the future you can order in this store.

    2019-01-20
    M***y
    M***y
    RU

    The goods did not receive, but the seller immediately returned the money, honest

    2019-06-19
***ical
Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK
***ark
D2pak/To-263 Rohs Compliant: No
***nell
MOSFET, N CH, 600V, 15A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:180W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHB15N60E-GE3
DISTI # V99:2348_09219015		Vishay IntertechnologiesTrans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		367
  • 2500:$1.5169
  • 1000:$1.5580
  • 500:$1.8550
  • 100:$2.1320
  • 10:$2.5760
  • 1:$3.4067
SIHB15N60E-GE3
DISTI # V36:1790_09219015		Vishay IntertechnologiesTrans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		0
  • 1000000:$1.5270
  • 500000:$1.5310
  • 100000:$1.9160
  • 10000:$2.6450
  • 1000:$2.7700
SIHB15N60E-GE3
DISTI # SIHB15N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 15A DPAK
RoHS: Compliant
Min Qty: 1
Container: Bulk		311In Stock
  • 5000:$1.5053
  • 2500:$1.5641
  • 1000:$1.6464
  • 500:$1.9522
  • 100:$2.2932
  • 10:$2.7990
  • 1:$3.1200
SIHB15N60E-GE3
DISTI # 25872788		Vishay IntertechnologiesTrans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		367
  • 5:$3.4067
SIHB15N60E-GE3
DISTI # SIHB15N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB15N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.3900
  • 10000:$1.3900
  • 2000:$1.4900
  • 4000:$1.4900
  • 1000:$1.5900
SIHB15N60E-GE3
DISTI # SIHB15N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK (Alt: SIHB15N60E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.1900
  • 50:€1.2900
  • 100:€1.2900
  • 500:€1.2900
  • 25:€1.4900
  • 10:€1.7900
  • 1:€2.5900
SIHB15N60E-GE3
DISTI # 68W7033		Vishay IntertechnologiesTrans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK - Product that comes on tape, but is not reeled (Alt: 68W7033)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 500:$1.8800
  • 250:$2.0800
  • 100:$2.1400
  • 50:$2.2900
  • 25:$2.4500
  • 10:$2.6000
  • 1:$3.1400
SIHB15N60E-GE3
DISTI # 68W7033		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 15A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.23ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1:$1.2500
  • 10:$1.2500
  • 25:$1.2500
  • 50:$1.2500
  • 100:$1.2500
  • 250:$1.2500
SIHB15N60E-GE3
DISTI # 68W7034		Vishay IntertechnologiesMOSFET, N CH, 600V, 15A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.23ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 20000:$1.3800
  • 12000:$1.4000
  • 8000:$1.4600
  • 4000:$1.5700
  • 2000:$1.6800
  • 1:$1.7600
SIHB15N60E-GE3.
DISTI # 84AC2746		Vishay IntertechnologiesD2PAK/TO-263 ROHS COMPLIANT: NO0
  • 20000:$1.3800
  • 12000:$1.4000
  • 8000:$1.4600
  • 4000:$1.5700
  • 2000:$1.6800
  • 1:$1.7600
SIHB15N60E-GE3
DISTI # 78-SIHB15N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		863
  • 1:$3.1300
  • 10:$2.5900
  • 100:$2.1400
  • 250:$2.0700
SIHB15N60E-GE3
DISTI # 7689304P		Vishay IntertechnologiesMOSFET N-CHANNEL 600V 15A D2PAK, RL1053
  • 200:£1.6600
  • 100:£1.7100
  • 50:£1.8100
  • 10:£1.9900
SIHB15N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		900
    SIHB15N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		Americas -
    • 1000:$1.7100
    • 2000:$1.5900
    • 5000:$1.5130
    SIHB15N60E-GE3
    DISTI # 2291552    		Vishay IntertechnologiesMOSFET, N CH, 600V, 15A, DPAK897
    • 500:£1.5800
    • 250:£1.6300
    • 100:£1.6800
    • 10:£2.0300
    • 1:£2.7700
    SIHB15N60E-GE3
    DISTI # 2291552    		Vishay IntertechnologiesMOSFET, N CH, 600V, 15A, DPAK
    RoHS: Compliant    		717
    • 2500:$2.3700
    • 1000:$2.4900
    • 500:$2.9500
    • 100:$3.4600
    • 10:$4.2200
    • 1:$4.7000
    Imagen Parte # Descripción
    ISO7762DW

    Mfr.#: ISO7762DW

    OMO.#: OMO-ISO7762DW

    		 Digital Isolators ISO7762DW/R DIG ISO - MYNA - 6CH
    ISO7760FDW

    Mfr.#: ISO7760FDW

    OMO.#: OMO-ISO7760FDW

    		 Digital Isolators High SpeedRobust EMC 6ChannelDig Isolator
    FJA4313OTU

    Mfr.#: FJA4313OTU

    OMO.#: OMO-FJA4313OTU

    		 Bipolar Transistors - BJT NPN Epitaxial Sil
    T495D106K035ATE120

    Mfr.#: T495D106K035ATE120

    OMO.#: OMO-T495D106K035ATE120-KEMET

    		 CAP TANT 10UF 10% 35V 2917
    ISO7760FDW

    Mfr.#: ISO7760FDW

    OMO.#: OMO-ISO7760FDW-TEXAS-INSTRUMENTS

    		 HIGH SPEED, ROBUST EMC SIX-CHANN
    ISO7762DW

    Mfr.#: ISO7762DW

    OMO.#: OMO-ISO7762DW-TEXAS-INSTRUMENTS

    		 ISO7762DW/R DIG ISO - MYNA - 6CH
    FJA4313OTU

    Mfr.#: FJA4313OTU

    OMO.#: OMO-FJA4313OTU-ON-SEMICONDUCTOR

    		 TRANS NPN 250V 17A TO3P
    EMK316BBJ476ML-T

    Mfr.#: EMK316BBJ476ML-T

    OMO.#: OMO-EMK316BBJ476ML-T-TAIYO-YUDEN

    		 CAP CER 47UF 16V X5R 1206
    MF0207FTE52-1K

    Mfr.#: MF0207FTE52-1K

    OMO.#: OMO-MF0207FTE52-1K-YAGEO

    		 Res Metal Film 1K Ohm 1% 3/5W ±50ppm/°C Conformal AXL Thru-Hole Ammo Pack
    Disponibilidad
    Valores:
    863
    En orden:
    2846
    Ingrese la cantidad:
    El precio actual de SIHB15N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,13 US$
    3,13 US$
    10
    2,59 US$
    25,90 US$
    100
    2,14 US$
    214,00 US$
    250
    2,07 US$
    517,50 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    • -12 V and -20 V P-Channel Gen III MOSFETs
      -12 V and -20 V P-Channel Gen III MOSFETs
      Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
    • DG2788A Dual DPDT / Quad SPDT Analog Switch
      DG2788A Dual DPDT / Quad SPDT Analog Switch
      Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
    • Smart Load Switches
      Smart Load Switches
      Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
    • Compare SIHB15N60E-GE3
      Compare SIHB15N60E-GE3
      SIHB15N60E vs SIHB15N60EGE3 vs SIHB15N60EGE3CUTTAPE
    • SUM70101EL 100 V P-Channel MOSFET
      SUM70101EL 100 V P-Channel MOSFET
      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
    • DGQ2788A AEC-Q100 Qualified Analog Switch
      DGQ2788A AEC-Q100 Qualified Analog Switch
      The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
    More Newest Products
    Top