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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPP50CN10NGXKSA1 DISTI # IPP50CN10NGXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 100V 20A TO-220 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| IPP50CN10NGXKSA1 DISTI # IPP50CN10NGXKSA1 | Infineon Technologies AG | - Bulk (Alt: IPP50CN10NGXKSA1) Min Qty: 807 Container: Bulk | Americas - 0 |
|
| IPP50CN10NGXKSA1 DISTI # 726-IPP50CN10NGXKSA1 | Infineon Technologies AG | MOSFET N-Ch 100V 20A TO220-3 RoHS: Compliant | 0 | |
| IPP50CN10NGXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 3660 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: IPP50CN10NGXKSA1 OMO.#: OMO-IPP50CN10NGXKSA1 |
MOSFET N-Ch 100V 20A TO220-3 |
|
Mfr.#: IPP50CN10N OMO.#: OMO-IPP50CN10N-1190 |
Nuevo y original |
|
|
Mfr.#: IPP50CN10N G OMO.#: OMO-IPP50CN10N-G-1190 |
MOSFET N-Ch 100V 20A TO220-3 |
|
|
Mfr.#: IPP50CN10NG OMO.#: OMO-IPP50CN10NG-1190 |
Nuevo y original |
|
|
Mfr.#: IPP50CN10NGHKSA1 OMO.#: OMO-IPP50CN10NGHKSA1-1190 |
Power Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
Mfr.#: IPP50CN10NGXKSA1 |
MOSFET N-CH 100V 20A TO-220 |
