SI3435DV-T1-E3

SI3435DV-T1-E3
Mfr. #:
SI3435DV-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 12V 4.8A 2W
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI3435DV-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SI3435DV-T1-E3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TSOP-6
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
3.05 mm
Serie:
SI3
Ancho:
1.65 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI3435DV-T1
Unidad de peso:
0.000705 oz
Tags
SI3435, SI343, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
P-Channel MOSFETs 12V 4.8A 2W
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI3435DV-T1-E3
DISTI # 781-SI3435DV-E3
Vishay IntertechnologiesMOSFET 12V 4.8A 2W
RoHS: Compliant
0
  • 3000:$0.3410
  • 6000:$0.3180
  • 9000:$0.3060
  • 24000:$0.2940
Imagen Parte # Descripción
SI3435DV-T1-GE3

Mfr.#: SI3435DV-T1-GE3

OMO.#: OMO-SI3435DV-T1-GE3

MOSFET 12V 6.3A 2.0W 36mohm @ 4.5V
SI3435DV-T1-E3

Mfr.#: SI3435DV-T1-E3

OMO.#: OMO-SI3435DV-T1-E3

MOSFET 12V 4.8A 2W
SI3435DV-T1

Mfr.#: SI3435DV-T1

OMO.#: OMO-SI3435DV-T1-1190

4800 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
SI3435DV-T1-GE3

Mfr.#: SI3435DV-T1-GE3

OMO.#: OMO-SI3435DV-T1-GE3-317

RF Bipolar Transistors MOSFET 12V 6.3A 2.0W 36mohm @ 4.5V
SI3435DV-T1-E3

Mfr.#: SI3435DV-T1-E3

OMO.#: OMO-SI3435DV-T1-E3-317

RF Bipolar Transistors MOSFET 12V 4.8A 2W
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de SI3435DV-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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