SI4447DY-T1-GE3

SI4447DY-T1-GE3
Mfr. #:
SI4447DY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 40V 4.5A 2.0W 54mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4447DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4447DY-T1-GE3 DatasheetSI4447DY-T1-GE3 Datasheet (P4-P6)
ECAD Model:
Más información:
SI4447DY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI4
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI4447DY-GE3
Unidad de peso:
0.006596 oz
Tags
SI4447D, SI4447, SI444, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET P-CH 40V 3.3A 8-Pin SOIC N T/R
***ure Electronics
MOSFET P-CHANNEL 40-V (D-S)
***i-Key
MOSFET P-CH 40V 3.3A 8SO
***
40V P-CHANNEL (D-S)
***ark
P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.3A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V; Power Dissipation Pd:1.1W ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4447DY-T1-GE3
DISTI # V72:2272_09216496
Vishay IntertechnologiesTrans MOSFET P-CH 40V 3.3A 8-Pin SOIC N T/R
RoHS: Compliant
2337
  • 1000:$0.3301
  • 500:$0.3977
  • 250:$0.4545
  • 100:$0.5050
  • 25:$0.5913
  • 10:$0.7225
  • 1:$0.9014
SI4447DY-T1-GE3
DISTI # V36:1790_09216496
Vishay IntertechnologiesTrans MOSFET P-CH 40V 3.3A 8-Pin SOIC N T/R
RoHS: Compliant
0
  • 2500000:$0.2863
  • 1250000:$0.2865
  • 250000:$0.2982
  • 25000:$0.3167
  • 2500:$0.3197
SI4447DY-T1-GE3
DISTI # SI4447DY-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 40V 3.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2056In Stock
  • 1000:$0.3634
  • 500:$0.4542
  • 100:$0.5746
  • 10:$0.7490
  • 1:$0.8500
SI4447DY-T1-GE3
DISTI # SI4447DY-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 40V 3.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2056In Stock
  • 1000:$0.3634
  • 500:$0.4542
  • 100:$0.5746
  • 10:$0.7490
  • 1:$0.8500
SI4447DY-T1-GE3
DISTI # SI4447DY-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 40V 3.3A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 25000:$0.2793
  • 12500:$0.2867
  • 5000:$0.2977
  • 2500:$0.3197
SI4447DY-T1-GE3
DISTI # 33149989
Vishay IntertechnologiesTrans MOSFET P-CH 40V 3.3A 8-Pin SOIC N T/R
RoHS: Compliant
5000
  • 2500:$0.2361
SI4447DY-T1-GE3
DISTI # 25790105
Vishay IntertechnologiesTrans MOSFET P-CH 40V 3.3A 8-Pin SOIC N T/R
RoHS: Compliant
2337
  • 22:$0.9014
SI4447DY-T1-GE3
DISTI # SI4447DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 40V 3.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4447DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
    SI4447DY-T1-GE3
    DISTI # 84R8052
    Vishay IntertechnologiesP CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.3A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.045ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.2V,Power Dissipation Pd:1.1W RoHS Compliant: Yes0
    • 1000:$0.3390
    • 500:$0.4240
    • 250:$0.4690
    • 100:$0.5140
    • 50:$0.5680
    • 25:$0.6220
    • 10:$0.6770
    • 1:$0.8380
    SI4447DY-T1-GE3
    DISTI # 15R5021
    Vishay IntertechnologiesP CH MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.3A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.045ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.2V,No. of Pins:8Pins RoHS Compliant: Yes0
    • 50000:$0.2710
    • 30000:$0.2840
    • 20000:$0.3050
    • 10000:$0.3260
    • 5000:$0.3530
    • 1:$0.3620
    SI4447DY-T1-GE3
    DISTI # 781-SI4447DY-GE3
    Vishay IntertechnologiesMOSFET 40V 4.5A 2.0W 54mohm @ 10V
    RoHS: Compliant
    2375
    • 1:$0.8300
    • 10:$0.6690
    • 100:$0.5080
    • 500:$0.4200
    • 1000:$0.3360
    • 2500:$0.3040
    • 5000:$0.2830
    • 10000:$0.2730
    SI4447DY-T1-GE3Vishay IntertechnologiesMOSFET 40V 4.5A 2.0W 54mohm @ 10V
    RoHS: Compliant
    Americas -
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      Disponibilidad
      Valores:
      Available
      En orden:
      1985
      Ingrese la cantidad:
      El precio actual de SI4447DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,83 US$
      0,83 US$
      10
      0,67 US$
      6,69 US$
      100
      0,51 US$
      50,80 US$
      500
      0,42 US$
      210,00 US$
      1000
      0,34 US$
      336,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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