GS8161E36DGT-375

GS8161E36DGT-375
Mfr. #:
GS8161E36DGT-375
Fabricante:
GSI Technology
Descripción:
SRAM 2.5 or 3.3V 512K x 36 18M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS8161E36DGT-375 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS8161E36DGT-375 más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
18 Mbit
Organización:
512 k x 36
Tiempo de acceso:
4.2 ns
Frecuencia máxima de reloj:
375 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
2.3 V
Corriente de suministro - Máx .:
270 mA, 350 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TQFP-100
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS8161E36DGT
Escribe:
Tubería DCD / Flujo continuo
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
36
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
SyncBurst
Tags
GS8161E36DGT-3, GS8161E36DGT, GS8161E36DG, GS8161E36, GS8161E3, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 36 4.2ns 100-Pin TQFP Bulk
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Imagen Parte # Descripción
GS8161E32DGD-250V

Mfr.#: GS8161E32DGD-250V

OMO.#: OMO-GS8161E32DGD-250V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DD-333IV

Mfr.#: GS8161E36DD-333IV

OMO.#: OMO-GS8161E36DD-333IV

SRAM 1.8/2.5V 512K x 36 18M
GS8161E32DGD-200

Mfr.#: GS8161E32DGD-200

OMO.#: OMO-GS8161E32DGD-200

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGT-250I

Mfr.#: GS8161E32DGT-250I

OMO.#: OMO-GS8161E32DGT-250I

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGD-200I

Mfr.#: GS8161E32DGD-200I

OMO.#: OMO-GS8161E32DGD-200I

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E36DGD-200V

Mfr.#: GS8161E36DGD-200V

OMO.#: OMO-GS8161E36DGD-200V

SRAM 1.8/2.5V 512K x 36 18M
GS8161E36DGT-150IV

Mfr.#: GS8161E36DGT-150IV

OMO.#: OMO-GS8161E36DGT-150IV

SRAM 1.8/2.5V 512K x 36 18M
GS8161E32DGD-150IV

Mfr.#: GS8161E32DGD-150IV

OMO.#: OMO-GS8161E32DGD-150IV

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DGT-333V

Mfr.#: GS8161E36DGT-333V

OMO.#: OMO-GS8161E36DGT-333V

SRAM 1.8/2.5V 512K x 36 18M
GS8161E32DD-150I

Mfr.#: GS8161E32DD-150I

OMO.#: OMO-GS8161E32DD-150I

SRAM 2.5 or 3.3V 512K x 32 16M
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de GS8161E36DGT-375 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
36
21,07 US$
758,52 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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