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IPP60R099P7XKSA1

IPP60R099P7XKSA1
Mfr. #:
IPP60R099P7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP60R099P7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPP60R099P7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
31 A
Rds On - Resistencia de la fuente de drenaje:
77 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
45 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
117 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Serie:
CoolMOS P7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
89 ns
Tiempo típico de retardo de encendido:
23 ns
Parte # Alias:
IPP60R099P7 SP001647032
Unidad de peso:
0.063493 oz
Tags
IPP60R099P, IPP60R099, IPP60R09, IPP60R0, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 99 mOhm 45 nC CoolMOS™ Power Mosfet - TO-220-3
***i-Key
MOSFET N-CH 600V 31A TO220-3
***ical
600V CoolMOS P7 Power Transistor
***ronik
N-CH 650V 100A 99mOhm TO220-3
***et Europe
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 600V, 31A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.077Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 31A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:117W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 31A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.077ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:117W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Parte # Mfg. Descripción Valores Precio
IPP60R099P7XKSA1
DISTI # 24713904		Infineon Technologies AG600V CoolMOS P7 Power Transistor500
  • 500:$3.0294
IPP60R099P7XKSA1
DISTI # IPP60R099P7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 31A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 2500:$2.3162
  • 500:$2.8836
  • 100:$3.3874
  • 25:$3.9084
  • 10:$4.1340
  • 1:$4.6000
IPP60R099P7XKSA1
DISTI # V36:1790_18203761		Infineon Technologies AG600V CoolMOS P7 Power Transistor0
    IPP60R099P7XKSA1
    DISTI # IPP60R099P7XKSA1    		Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPP60R099P7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 3000:$2.0900
    • 5000:$2.0900
    • 1000:$2.1900
    • 2000:$2.1900
    • 500:$2.2900
    IPP60R099P7XKSA1
    DISTI # 57AC6814    		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes674
    • 500:$2.7700
    • 250:$3.0900
    • 100:$3.2500
    • 50:$3.4200
    • 25:$3.5900
    • 10:$3.7600
    • 1:$4.4200
    IPP60R099P7XKSA1
    DISTI # 726-IPP60R099P7XKSA1    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		862
    • 1:$4.3800
    • 10:$3.7200
    • 100:$3.2200
    • 250:$3.0600
    • 500:$2.7400
    • 1000:$2.3100
    • 2500:$2.2000
    IPP60R099P7XKSA1
    DISTI # 2862301    		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-220
    RoHS: Compliant    		1124
    • 100:$5.7100
    • 10:$6.9500
    • 1:$7.7900
    IPP60R099P7XKSA1
    DISTI # 2862301    		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-220678
    • 100:£2.9700
    • 10:£3.4200
    • 1:£4.5100
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    		 Schottky Diodes & Rectifiers 35V 2 x 15A IF C.A. TO-220AB
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    Mfr.#: BSC010N04LS

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    		 MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
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    Mfr.#: LM358LVIDR

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    Disponibilidad
    Valores:
    743
    En orden:
    2726
    Ingrese la cantidad:
    El precio actual de IPP60R099P7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,38 US$
    4,38 US$
    10
    3,72 US$
    37,20 US$
    100
    3,22 US$
    322,00 US$
    250
    3,06 US$
    765,00 US$
    500
    2,74 US$
    1 370,00 US$
    1000
    2,31 US$
    2 310,00 US$
    2500
    2,20 US$
    5 500,00 US$
    5000
    2,11 US$
    10 550,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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