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BSC889N03LSGATMA1

BSC889N03LSGATMA1
Mfr. #:
BSC889N03LSGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 30V 45A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC889N03LSGATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
BSC889N03LSG, BSC889N03L, BSC889, BSC8, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 45A 8-Pin TDSON
***i-Key Marketplace
POWER FIELD-EFFECT TRANSISTOR, 1
***(Formerly Allied Electronics)
IRF8714PBF N-channel MOSFET Transistor; 14 A; 30 V; 8-Pin SOIC
***roFlash
Single N-Channel 30 V 8.7 mOhm 8.1 nC HEXFET® Power Mosfet - SOIC-8
***nell
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation P
***ure Electronics
Single N-Channel 30 V 8.5 mOhm 8.3 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET; N Ch.; 30V; 14A; 8.5 MOHM; 8.3 NC QG; SO-8; Pb-Free
***ical
Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC Tube
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.0069Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V Rohs Compliant: Yes
***ure Electronics
N-Channel 30 V 9 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 13.5A 8-Pin SOIC N T/R - Tape and Reel
***emi
N-Channel PowerTrench® SyncFET™, 30V, 13.5A, 9.0mΩ
***nell
MOSFET, N-CH, 30V, 13.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V;
***rchild Semiconductor
The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
***ure Electronics
FDMS7692A Series 30 V 13.5 A 8 mOhm SMT N-Ch PowerTrench Mosfet - Power56
***emi
N-Channel PowerTrench® MOSFET 30V, 8mΩ
***r Electronics
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:27W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***emi
N-Channel PowerTrench® MOSFET 30V, 21A, 8.5mΩ
***r Electronics
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***enic
30V 51A 6.3m´Î@10V13.5A 42W 1.9V@250uA 161pF@15V N Channel 1.195nF@15V 13nC@0~5V -55¡Í~+150¡Í@(Tj) Power-56-8 MOSFETs ROHS
***el Electronic
Embedded - Microcontrollers 3 (168 Hours) 145-TFLGA 103 96K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 32-Bit IC MCU 32BIT 512KB FLASH 145LGA
***rchild Semiconductor
The FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Parte # Mfg. Descripción Valores Precio
BSC889N03LSGATMA1
DISTI # BSC889N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 45A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
    BSC889N03LSGATMA1
    DISTI # BSC889N03LSGATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 30V 45A TDSON-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BSC889N03LSGATMA1
      DISTI # BSC889N03LSGATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 30V 45A TDSON-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        BSC889N03LS G
        DISTI # 726-BSC889N03LSG        		Infineon Technologies AGMOSFET N-Ch 30V 13A TDSON-8
        RoHS: Compliant        		0
          BSC889N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		30000
          • 1000:$0.2800
          • 500:$0.2900
          • 100:$0.3000
          • 25:$0.3200
          • 1:$0.3400
          Imagen Parte # Descripción
          BSC889N03LS

          Mfr.#: BSC889N03LS

          OMO.#: OMO-BSC889N03LS-1190

          		 Nuevo y original
          BSC889N03LS G

          Mfr.#: BSC889N03LS G

          OMO.#: OMO-BSC889N03LS-G-1190

          		 MOSFET N-Ch 30V 13A TDSON-8
          BSC889N03LSG

          Mfr.#: BSC889N03LSG

          OMO.#: OMO-BSC889N03LSG-1190

          		 Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          BSC889N03LSG E8178

          Mfr.#: BSC889N03LSG E8178

          OMO.#: OMO-BSC889N03LSG-E8178-1190

          		 Nuevo y original
          BSC889N03LSGATMA1

          Mfr.#: BSC889N03LSGATMA1

          OMO.#: OMO-BSC889N03LSGATMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 30V 45A TDSON-8
          BSC889N03LSGE8178

          Mfr.#: BSC889N03LSGE8178

          OMO.#: OMO-BSC889N03LSGE8178-1190

          		 Nuevo y original
          BSC889N03MS

          Mfr.#: BSC889N03MS

          OMO.#: OMO-BSC889N03MS-1190

          		 Nuevo y original
          BSC889N03MS G

          Mfr.#: BSC889N03MS G

          OMO.#: OMO-BSC889N03MS-G-1190

          		 MOSFET N-Ch 30V 12A TDSON-8
          BSC889N03MSG

          Mfr.#: BSC889N03MSG

          OMO.#: OMO-BSC889N03MSG-1190

          		 Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          BSC889N03MSGATMA1

          Mfr.#: BSC889N03MSGATMA1

          OMO.#: OMO-BSC889N03MSGATMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 30V 44A TDSON-8
          Disponibilidad
          Valores:
          Available
          En orden:
          2500
          Ingrese la cantidad:
          El precio actual de BSC889N03LSGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          0,42 US$
          0,42 US$
          10
          0,40 US$
          3,99 US$
          100
          0,38 US$
          37,80 US$
          500
          0,36 US$
          178,50 US$
          1000
          0,34 US$
          336,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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