SIE812DF-T1-GE3

Mfr. #:: SIE812DF-T1-GE3
Fabricante:: Vishay / Siliconix
Descripción:: MOSFET 40V 163A 125W 2.6mohm @ 10V
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SIE812DF-T1-GE3 Ficha de datos
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HTML Datasheet:: SIE812DF-T1-GE3 Datasheet SIE812DF-T1-GE3 Datasheet (P4-P6)SIE812DF-T1-GE3 Datasheet (P7-P9)SIE812DF-T1-GE3 Datasheet (P10)
ECAD Model:
Más información:: SIE812DF-T1-GE3 más información

Atributo del producto
Valor de atributo

Fabricante:: Vishay

Categoria de producto:: MOSFET

RoHS:: E

Tecnología:: Si

Nombre comercial:: TrenchFET, PolarPAK

Embalaje:: Carrete

Serie:: SIE

Marca:: Vishay / Siliconix

Tipo de producto:: MOSFET

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Parte # Alias:: SIE812DF-GE3

Tags: SIE812, SIE81, SIE8, SIE

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIE812DF-T1-GE3 Descripción

***et: Trans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R

***ment14 APAC: N CHANNEL MOSFET, 40V, 60A POLARPAK

***i-Key: MOSFET N-CH 40V 60A 10POLARPAK

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60A; On Resistance, Rds(on):0.0034ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:2.3V ;RoHS Compliant: Yes

SIE812DF-T1-GE3 Más información

N-Channel PolarPAK® Power MOSFETs: Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SIE812DF-T1-GE3 DISTI # SIE812DF-T1-GE3-ND	Vishay Siliconix	MOSFET N-CH 40V 60A POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.8141
SIE812DF-T1-GE3 DISTI # SIE812DF-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE812DF-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.7900 6000:$1.6900 12000:$1.5900 18000:$1.5900 30000:$1.4900
SIE812DF-T1-GE3 DISTI # 15R4857	Vishay Intertechnologies	N CHANNEL MOSFET, 40V, 60A POLARPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes	0	1:$1.9500 2000:$1.8600 4000:$1.7400 8000:$1.6200 12000:$1.5500 20000:$1.5300
SIE812DF-T1-GE3 DISTI # 26R1858	Vishay Intertechnologies	N CHANNEL MOSFET, 40V, 60A POLARPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes	0	1:$3.8600 25:$3.6300 50:$3.4100 100:$3.1200 250:$2.8200 500:$2.4600 1000:$1.9500
SIE812DF-T1-GE3 DISTI # 781-SIE812DF-GE3	Vishay Intertechnologies	MOSFET 40V 163A 125W 2.6mohm @ 10V RoHS: Compliant	0	3000:$1.6500

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SIE812DF-T1-E3 OMO.#: OMO-SIE812DF-T1-E3	MOSFET 40V 60A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF-T1-GE3 OMO.#: OMO-SIE812DF-T1-GE3	MOSFET 40V 163A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF-T1-GE3 OMO.#: OMO-SIE812DF-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 40V 163A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF-T1-E3 OMO.#: OMO-SIE812DF-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 40V 60A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF OMO.#: OMO-SIE812DF-1190	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 5000
Ingrese la cantidad:

El precio actual de SIE812DF-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~3,47 US$~~; ~~3,47 US$~~

10: ~~2,87 US$~~; ~~28,70 US$~~

100: ~~2,36 US$~~; ~~236,00 US$~~

250: ~~2,29 US$~~; ~~572,50 US$~~

500: ~~2,05 US$~~; ~~1 025,00 US$~~

1000: ~~1,73 US$~~; ~~1 730,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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SIE812DF-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes