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SIE812DF-T1-E3

SIE812DF-T1-E3
Mfr. #:
SIE812DF-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 40V 60A 125W 2.6mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIE812DF-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIE812DF-T1-E3 Datasheet
ECAD Model:
Más información:
SIE812DF-T1-E3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Nombre comercial:
TrenchFET, PolarPAK
Embalaje:
Carrete
Serie:
SIE
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SIE812DF-E3
Tags
SIE812, SIE81, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiE812DF Series N-Channel 40 V 0.0026 Ohm 125 W Surface Mount Mosfet - PolarPAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0034ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.3V ;RoHS Compliant: Yes
***nell
MOSFET, N, POLAR PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:163A; Resistance, Rds On:0.0026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.3V; Case Style:PolarPAK; Termination Type:SMD; Operating Temperature Range:-50°C to +150°C; Base Number:812; Current, Idm Pulse:100A; N-channel Gate Charge:52nC; Power Dissipation:125mW; Power, Pd:125W; Resistance, Rds on @ Vgs = 10V:0.0026ohm; Resistance, Rds on @ Vgs = 4.5V:0.0034ohm; Voltage, Rds Measurement:10V; Voltage, Vds Max:40V; Voltage, Vgs th Max:3V; Voltage, Vgs th Min:1.5V
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
Parte # Mfg. Descripción Valores Precio
SIE812DF-T1-E3
DISTI # SIE812DF-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 40V 60A 10-POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$1.8141
SIE812DF-T1-E3
DISTI # SIE812DF-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE812DF-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.7900
  • 6000:$1.6900
  • 12000:$1.5900
  • 18000:$1.5900
  • 30000:$1.4900
SIE812DF-T1-E3
DISTI # 781-SIE812DF-T1-E3		Vishay IntertechnologiesMOSFET 40V 60A 125W 2.6mohm @ 10V
RoHS: Compliant		0
  • 3000:$2.0700
SIE812DF-T1-E3Vishay IntertechnologiesMOSFET 40V 60A 125W 2.6mohm @ 10VAmericas -
    SIE812DF-T1-E3
    DISTI # 1497643    		Vishay Intertechnologies 
    RoHS: Compliant    		0
    • 1:$5.5100
    • 10:$4.5600
    • 100:$3.7500
    • 250:$3.6500
    • 500:$3.3100
    • 1000:$3.2900
    • 3000:$3.2800
    Imagen Parte # Descripción
    SIE812DF-T1-E3

    Mfr.#: SIE812DF-T1-E3

    OMO.#: OMO-SIE812DF-T1-E3

    		 MOSFET 40V 60A 125W 2.6mohm @ 10V
    SIE812DF-T1-GE3

    Mfr.#: SIE812DF-T1-GE3

    OMO.#: OMO-SIE812DF-T1-GE3

    		 MOSFET 40V 163A 125W 2.6mohm @ 10V
    SIE812DF-T1-GE3

    Mfr.#: SIE812DF-T1-GE3

    OMO.#: OMO-SIE812DF-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 40V 163A 125W 2.6mohm @ 10V
    SIE812DF-T1-E3

    Mfr.#: SIE812DF-T1-E3

    OMO.#: OMO-SIE812DF-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 40V 60A 125W 2.6mohm @ 10V
    SIE812DF

    Mfr.#: SIE812DF

    OMO.#: OMO-SIE812DF-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de SIE812DF-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,47 US$
    3,47 US$
    10
    2,87 US$
    28,70 US$
    100
    2,36 US$
    236,00 US$
    250
    2,29 US$
    572,50 US$
    500
    2,05 US$
    1 025,00 US$
    1000
    1,73 US$
    1 730,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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