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STB36NM60ND

STB36NM60ND
Mfr. #:
STB36NM60ND
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-CH 600V 29A D2PAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STB36NM60ND Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
STB36NM60ND más información STB36NM60ND Product Details
Atributo del producto
Valor de atributo
Fabricante
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
MDmesh de canal N
embalaje
Carrete
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
190 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
61.8 ns
Hora de levantarse
53.4 ns
Vgs-Puerta-Fuente-Voltaje
25 V
Id-corriente-de-drenaje-continua
29 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Resistencia a la fuente de desagüe de Rds
110 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
111 ns
Tiempo de retardo de encendido típico
30 ns
Qg-Gate-Charge
80.4 nC
Tags
STB36NM, STB36, STB3, STB
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 600V 29A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 600 V 0.11 Ohm 80.4 nC 190 W Silicon SMT Mosfet - TO-263-3
***icroelectronics
Automotive-grade N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
N-Channel FDmesh Power MOSFETs
STMicroelectronics N-Channel FDmesh™ Power MOSFETs are a power MOSFET which belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to STMicroelectronic's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. These MOSFETs feature fast recovery, low input capacitance and gate charge, low gate input resistance, and extremely high dv/dt and avalanche capabilities.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descripción Valores Precio
STB36NM60ND
DISTI # 497-13861-2-ND		STMicroelectronicsMOSFET N-CH 600V 29A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$3.9600
STB36NM60ND
DISTI # 497-13861-1-ND		STMicroelectronicsMOSFET N-CH 600V 29A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$4.7531
  • 100:$5.7645
  • 10:$6.9320
  • 1:$7.7100
STB36NM60ND
DISTI # 497-13861-6-ND		STMicroelectronicsMOSFET N-CH 600V 29A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$4.7531
  • 100:$5.7645
  • 10:$6.9320
  • 1:$7.7100
STB36NM60ND
DISTI # STB36NM60ND		STMicroelectronicsTrans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D²PAK T/R - Tape and Reel (Alt: STB36NM60ND)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.3900
  • 2000:$3.1900
  • 4000:$3.0900
  • 6000:$2.8900
  • 10000:$2.8900
STB36NM60ND
DISTI # 511-STB36NM60ND		STMicroelectronicsMOSFET Auto-grade N-CH 650V 29A FDmesh II 0.097
RoHS: Compliant		362
  • 1:$6.0600
  • 10:$5.1500
  • 100:$4.4700
  • 250:$4.2400
  • 500:$3.8000
  • 1000:$3.2100
STB36NM60ND
DISTI # 7925701P		STMicroelectronicsMOSFET N-CH 600V 29A FDMESH D2PAK, RL96
  • 10:£3.7200
  • 50:£3.4800
  • 150:£3.2300
  • 500:£2.7500
STB36NM60NDSTMicroelectronicsPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RoHS: Compliant		Europe - 990
    Imagen Parte # Descripción
    STB36N60M6

    Mfr.#: STB36N60M6

    OMO.#: OMO-STB36N60M6

    		 MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a D2PAK package
    STB36NM60N

    Mfr.#: STB36NM60N

    OMO.#: OMO-STB36NM60N

    		 MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS
    STB36NF06LT4

    Mfr.#: STB36NF06LT4

    OMO.#: OMO-STB36NF06LT4

    		 MOSFET 60V 0.032Ohm 30A N-Channel
    STB36NM60ND

    Mfr.#: STB36NM60ND

    OMO.#: OMO-STB36NM60ND-STMICROELECTRONICS

    		 MOSFET N-CH 600V 29A D2PAK
    STB36N60M6

    Mfr.#: STB36N60M6

    OMO.#: OMO-STB36N60M6-1190

    		 PTD HIGH VOLTAGE
    STB36NF02L

    Mfr.#: STB36NF02L

    OMO.#: OMO-STB36NF02L-1190

    		 Nuevo y original
    STB36NF02LT4

    Mfr.#: STB36NF02LT4

    OMO.#: OMO-STB36NF02LT4-1190

    		 Nuevo y original
    STB36NF03LT4

    Mfr.#: STB36NF03LT4

    OMO.#: OMO-STB36NF03LT4-1190

    		 Nuevo y original
    STB36NF06LT4

    Mfr.#: STB36NF06LT4

    OMO.#: OMO-STB36NF06LT4-STMICROELECTRONICS

    		 MOSFET N-CH 60V 30A D2PAK
    STB36NM60N

    Mfr.#: STB36NM60N

    OMO.#: OMO-STB36NM60N-STMICROELECTRONICS

    		 MOSFET N-CH 600V 29A D2PAK
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de STB36NM60ND es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,23 US$
    4,23 US$
    10
    4,02 US$
    40,18 US$
    100
    3,81 US$
    380,70 US$
    500
    3,60 US$
    1 797,75 US$
    1000
    3,38 US$
    3 384,00 US$
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