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| PartNumber | STB36NM60N | STB36NM60ND | STB36NM60ND-CUT TAPE |
| Description | MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS | MOSFET Auto-grade N-CH 650V 29A FDmesh II 0.097 | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V | - |
| Id Continuous Drain Current | 29 A | 29 A | - |
| Rds On Drain Source Resistance | 105 mOhms | 110 mOhms | - |
| Qg Gate Charge | 83.6 nC | 80.4 nC | - |
| Pd Power Dissipation | 210 W | 190 W | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | MDmesh | - | - |
| Packaging | Reel | Reel | - |
| Series | STB36NM60N | STW36NM60N | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Fall Time | - | 61.8 ns | - |
| Rise Time | - | 53.4 ns | - |
| Typical Turn Off Delay Time | - | 111 ns | - |
| Typical Turn On Delay Time | - | 30 ns | - |